Search results for "schottky"

Responsivity measurements of silicon carbide Schottky photodiodes in the UV range

2014

We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

2017

Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…

Use of Mott-Schottky Plots to Characterise the Amorphous Passive Film/Electrolyte Junction

2010

Mott-Schottky analysis of differential capacitance data of passive-film electrolyte junctions. Is it really providing correct physical insights on th…

2009

Semiconductor electrochemistry approach to passivity and passivity breakdown of metals and metallic alloys

2004

AbstractA critical appraisal of the use of the theory of semiconductors in characterising passive films on metals and alloys is provided, with special emphasis on the use of Mott-Schottky theory for the location of characteristic energy levels of the passive film-electrolyte junction. Some inconsistencies between theory and experimental results in the case of thin passive films are discussed together with possible alternative ways for overcoming such problems. The role of semiconducting properties in determining the pitting behaviour of passive films on W in solutions containing halide is presented and discussed. The validity of a recently proposed correlation between the solid state proper…

A Critical Analysis on the Use of Mott-Schottky Plots to Characterise the Passive Film/Electrolyte Junction

2010

Ultra-Low Noise Multiwalled Carbon Nanotube Transistors

2013

We report an experimental noise study of intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube (IS-MWCNT) devices. The noise is two orders of magnitude lower than in singlewalled nanotubes (SWCNTs) and has no length dependence within the studied range. In these channel limited devices with small or negligible Schottky barriers the noise is shown to originate from the intrinsic potential fluctuations of charge traps in the gate dielectric. The gate dependence of normalized noise can be explained better using ballistic the charge noise model rather than diffusive McWhorter’s model. The results indicate that the noise properties of IS-MWCNTs are closer to SWCNTs than th…

Enhancement of photoelectrochemical activity for water splitting by controlling hydrodynamic conditions on titanium anodization

2015

This work studies the electrochemical and photoelectrochemical properties of a new type of TiO2 nanostructure (nanosponge) obtained by means of anodization in a glycerol/water/NH4F electrolyte under controlled hydrodynamic conditions. For this purpose different techniques such as Scanning Electronic Microscopy (SEM), Raman Spectroscopy, Electrochemical Impedance Spectroscopy (EIS) measurements, Mott–Schottky (M−S) analysis and photoelectrochemical water splitting tests under standard AM 1.5 conditions are carried out. The obtained results show that electron–hole separation is facilitated in the TiO2 nanosponge if compared with highly ordered TiO2 nanotube arrays. As a result, nanosponges en…

Mass measurement of cooled neutron-deficient bismuth projectile fragments with time-resolved Schottky mass spectrometry at the FRS-ESR facility

2005

Masses of 582 neutron-deficient nuclides ($30\leq{Z}\leq{85}$) were measured with time-resolved Schottky mass spectrometry at the FRS-ESR facility at GSI, 117 were used for calibration. The masses of 71 nuclides were obtained for the first time. A typical mass accuracy of 30 $\mu$u was achieved. These data have entered the latest atomic mass evaluation. The mass determination of about 140 additional nuclides was possible via known energies ($Q$-values) of $\alpha-$, $\beta-$, or proton decays. The obtained results are compared with the results of other measurements.

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

2020

The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.