Search results for "second"
showing 10 items of 3671 documents
Two-dimensional Banach spaces with polynomial numerical index zero
2009
We study two-dimensional Banach spaces with polynomial numerical indices equal to zero.
Injection and ultrafast regeneration in dye-sensitized solar cells
2014
Injection of an electron from the excited dye molecule to the semiconductor is the initial charge separation step in dye-sensitized solar cells (DSC's). Though the dynamics of the forward injection process has been widely studied, the results reported so far are controversial, especially for complete DSC's. In this work, the electron injection in titanium dioxide (TiO2) films sensitized with ruthenium bipyridyl dyes N3 and N719 was studied both in neat solvent and in a typical iodide/triiodide (I-/I3 -) DSC electrolyte. Transient absorption (TA) spectroscopy was used to monitor both the formation of the oxidized dye and the arrival of injected electrons to the conduction band of TiO2. Emiss…
Elliptic equations and maps of bounded length distortion
1988
On considere l'equation elliptique d'ordre 2: L(u)=Σ i,f=1 n ∂ 1 (a ij ∂ ju )=0 ou les coefficients a ij sont des fonctions C 1 dans un domaine D de R n
Vertical versus horizontal Sobolev spaces
2020
Let $\alpha \geq 0$, $1 < p < \infty$, and let $\mathbb{H}^{n}$ be the Heisenberg group. Folland in 1975 showed that if $f \colon \mathbb{H}^{n} \to \mathbb{R}$ is a function in the horizontal Sobolev space $S^{p}_{2\alpha}(\mathbb{H}^{n})$, then $\varphi f$ belongs to the Euclidean Sobolev space $S^{p}_{\alpha}(\mathbb{R}^{2n + 1})$ for any test function $\varphi$. In short, $S^{p}_{2\alpha}(\mathbb{H}^{n}) \subset S^{p}_{\alpha,\mathrm{loc}}(\mathbb{R}^{2n + 1})$. We show that the localisation can be omitted if one only cares for Sobolev regularity in the vertical direction: the horizontal Sobolev space $S_{2\alpha}^{p}(\mathbb{H}^{n})$ is continuously contained in the vertical Sobolev sp…
Dielectric response of BaTiO3 electronic states under AC fields via microsecond time-resolved X-ray absorption spectroscopy
2021
Abstract For the first time, the dielectric response of a BaTiO 3 thin film under an AC electric field is investigated using microsecond time-resolved X-ray absorption spectroscopy at the Ti K-edge in order to clarify correlated contributions of each constituent atom on the electronic states. Intensities of the pre-edge e g peak and shoulder structure just below the main edge increase with an increase in the amplitude of the applied electric field, whereas that of the main peak decreases in an opposite manner. Based on the multiple scattering theory, the increase and decrease of the e g and main peaks are simulated for different Ti off-center displacements. Our results indicate that these s…
Temperature dependence of luminescence of LiF crystals doped with different metal oxides
2020
Photoluminescence and cathodoluminescence of LiF crystals doped with different binary metal oxides were measured in the wide temperature range of 50-300 K and time interval of 10−8−10−1 s after the nanosecond electron excitation pulse. Both as-grown those and crystals irradiated by an electron beam in range of absorbed dose up to 103 Gy were studied. It is shown that spectral-kinetic characteristics of the luminescence depend on the absorbed dose (type of created/accumulated color centers), the irradiation temperature, the concentration of hydroxyl, which promotes incorporation of the MeO complex (Me: W, Ti, Fe, Li) into the crystal lattice, and the cation-dopants.
Fluence effect on ion-implanted As diffusion in relaxed SiGe
2005
A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
A New Multipactor Effect Model for Dielectric-Loaded Rectangular Waveguides
2019
Multipactor is an electron discharge that may appear in particle accelerators and microwave devices such as filters, multiplexers, and RF satellite payloads in satellite on-board equipment under vacuum conditions. When some resonance conditions are satisfied, secondary electrons get synchronized with the RF fields, and the electron population inside the device grows exponentially leading to a multipactor discharge. This multipactor discharge has some negative effects that degrade the device performance: increase of signal noise and reflected power, heating of the device walls, outgassing, detuning of resonant cavities, and even the partial or total destruction of the component. The main aim…
Study of the Secondary Electron Yield in Dielectrics Using Equivalent Circuital Models
2018
[EN] Secondary electron emission has an important role on the triggering of the multipactor effect; therefore, its study and characterization are essential in radio-frequency waveguide applications. In this paper, we propose a theoretical model, based on equivalent circuit models, to properly understand charging and discharging processes that occur in dielectric samples under electron irradiation for secondary electron emission characterization. Experimental results obtained for Pt, Si, GaS, and Teflon samples are presented to verify the accuracy of the proposed model. Good agreement between theory and experiments has been found.
Annealing behaviour of aluminium-implanted InP
2000
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…