Search results for "semiconductor"

Performance of a new real time digital pulse processing system for X-ray and gamma ray semiconductor detectors

2014

New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring better performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive feedback preamplifiers, will …

Digital filtering and analysis for a semiconductor X-ray detector data acquisition

2007

Abstract Pile-up distortion is a major drawback in X-ray spectroscopy at high count rate. Pulse width narrowing with shaping techniques can lead to the reduction of the pile-up distortion, but a low shaping time reduces the noise filtration and leads to a poor energy resolution. Thus, only a best compromise solution between the pile-up and the noise requirements is achievable. The hardware manipulation needed to adjust the parameters of the traditional electronic shaping amplifiers makes it uneasy to tests various settings in different conditions. Digital techniques can help to overcome such difficulties. A digital signal processing and analysis system for X-ray spectroscopy is described in…

Synthesis and Spectroscopic Properties of Silica−Dye−Semiconductor Nanocrystal Hybrid Particles

2010

We prepared silica-dye-nanocrystal hybrid particles and studied the energy transfer from semiconductor nanocrystals (= donor) to organic dye molecules (= acceptor). Multishell CdSe/CdS/ZnS semiconductor nanocrystals were adsorbed onto monodisperse Stöber silica particles with an outer silica shell of thickness 2-23 nm containing organic dye molecules (Texas Red). The thickness of this dye layer has a strong effect on the energy transfer efficiency, which is explained by the increase in the number of dye molecules homogeneously distributed within the silica shell, in combination with an enhanced surface adsorption of nanocrystals with increasing dye amount. Our conclusions were underlined by…

Optimal pareto solutions of a dynamic C chart: An application of statistical process control on a semiconductor devices manufacturing process

2015

The present paper proposes a novel economic-statistical design procedure of a dynamic c control chart for the Statistical Process Control (SPC) of the manufacturing process of semiconductor devices. Particularly, a non-linear constrained mathematical programming model is formulated and solved by means of the ε-constraint method. A numerical application is developed in order to describe the Pareto frontier, that is the set of optimal c charts and the related practical considerations are given. The obtained results highlight how the performance of the developed dynamic c chart overcome that of the related static one, thus demonstrating the effectiveness of the proposed procedure.

Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures

2004

To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Band-to-Band and Band-to-Acceptor Photoluminescence Studies in InSe under Pressure

1999

We report on photoluminescence (PL) measurements under pressure on p-type N-doped InSe at 10 K and on n-type Si-doped InSe at room temperature. Low-temperature PL of N-doped InSe is dominated by a band-to-acceptor peak. From the pressure dependence of the ionization energy of the N related shallow acceptor, the pressure change of the hole effective mass is estimated through the Gerlach-Pollmann model for hydrogenic levels in uniaxial crystals and discussed in the framework of a k p model. Room temperature PL in Si-doped InSe is dominated by a band-to-band peak exhibiting a pressure shift in agreement with previous works. This PL peak has been measured up to 7 GPa and a steep reversible decr…

Fundamentals of photoelectrocatalysis

2022

Photoelectrocatalysis combines heterogeneous photocatalysis and electrocatalysis principles for numerous processes including the degradation of harmful compounds, the generation of H2 and O2 from water splitting, the reduction of CO2 or the photoelectrocatalytic synthesis of valuable organic molecules otherwise difficult to be synthetized with classical approaches. The recent progress of photoelectrocatalysis is heavily related to the development of materials, especially in 2D and nano materials. Highly ordered nanomaterials such as graphene, nanotubes, nanowires, etc. are gaining more attention due to their high surface area and excellent conductivity. Other challenges are the development …

SPEEDAM 2010 Poster REC0616: An electrochemical route towards the fabrication of nanostructured semiconductor solar cells

2010

Beam test results of IHEP-NDL Low Gain Avalanche Detectors(LGAD)

2020

A High-Granularity Timing Detector (HGTD) is proposed based on the Low-Gain Avalanche Detector (LGAD) for the ATLAS experiment to satisfy the time resolution requirement for the up-coming High Luminosity at LHC (HL-LHC). We report on beam test results for two proto-types LGADs (BV60 and BV170) developed for the HGTD. Such modules were manufactured by the Institute of High Energy Physics (IHEP) of Chinese Academy of Sciences (CAS) collaborated with Novel Device Laboratory (NDL) of the Beijing Normal University. The beam tests were performed with 5 GeV electron beam at DESY. The timing performance of the LGADs was compared to a trigger counter consisting of a quartz bar coupled to a SiPM read…

Gigahertz Single-Electron Pumping Mediated by Parasitic States

2018

In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achi…