Search results for "semiconductor"
showing 10 items of 974 documents
Internal photoemission in solar blind AlGaN Schottky barrier photodiodes
2005
We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increase linearly with the band gap energy of the AlGaN alloy. The amplitude of the internal photoemission signal is about 20 times smaller than the value given by the Fowler theory based on a free electron model. We explain this result by taking into account the interband transitions and the ballistic transport of photoexcited electrons in the metal. This low value of internal photoemission allows us to achieve a spectral rejection ratio betwee…
How does graphene enhance the photoelectric conversion efficiency of dye sensitized solar cells? An insight from a theoretical perspective
2019
The main goal of this work is to clearly answer the question from a theoretical perspective: how does graphene enhance the photoelectric conversion efficiency in the semiconducting layer of a dye sensitized solar cell? Several arrangements of the graphene layer between the dye molecule and the TiO2 (101) surface are carefully studied and discussed. The dynamic interfacial electron propagations are simulated with consideration of the underlying nuclear motion effect. Theoretical investigation shows that graphene can speed up the electron injection from the dye molecules to the semiconductor layer, only when the graphene sheet is bonded to the TiO2 surface via C–Ti bonds. The excited electron…
Efficient microwave-assisted synthesis of PCBM methanofullerenes (C60 and C70)
2015
PCBM is a fullerene derivative (phenyl-C61-butyric acid methyl ester) considered to be one of the best n-type organic semiconductors and plays a relevant role in organic photovoltaic solar cells. Much effort has been devoted to the optimization of the synthesis of PCBM derivatives. In this paper, PC61BM and PC71BM fullerene mono-adducts but also PCBM-like derivatives are successfully prepared by a one- step cyclopropanation reaction under microwave irradiation. The products are collected in good yields in short time, during which isomerization of the open [5,6] to the closed [6,6] form takes place in situ. In addition, with the use of two cycles of irradiation, a series of mixtures of bis-a…
Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates
2013
The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.
Mid-infrared intersubband absorption in lattice-matched AlInN/GaN multiple-quantum wells
2005
We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInNGaN multiple-quantum-wells. A clear absorption peak is observed around 3 μm involving transitions from the conduction band ground state to the first excited state. In addition to ISB absorption, photoluminescence experiments were carried out on lattice- matched AlInNGaN single quantum wells in order to determine the spontaneous polarization discontinuity between GaN and Al0.82 In0.18 N compounds. The experimental value is in good agreement with theoretical predictions. Our results demonstrate that the AlInNGaN system is very promising to achieve crack-free and low dislocation density struct…
Room-temperature spin-orbit torque in NiMnSb
2015
Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneously, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electric…
Directing the self-assembly of semiconducting copolymers: the consequences of grafting linear or hyperbranched polyether side chains.
2013
The synthesis and self-assembly of novel semiconducting rod-coil type graft block copolymers based on poly(para-phenylene vinylene) (PPV) copolymers is presented, focusing on the ordering effect of linear versus hyperbranched side chains. Using an additional reactive ester block, highly polar, linear poly(ethylene glycol), and hyperbranched polyglycerol side chains are attached in a grafting-to approach. Remarkably, the resulting novel semiconducting graft copolymers with polyether side chains show different solubility and side-chain directed self-assembly behavior in various solvents, e.g., cylindrical or spherical superstructures in the size range of 10 to 120 nm, as shown by TEM. By adju…
p -Type and n -type conductometric behaviors of octachloro-metallophthalocyanine-based heterojunctions, the key role of the metal
2020
In the present work, we determined the electrical properties of octachlorinated metallophthalocyanines with Co(II) and Cu(II) ions as metal centers. We engaged them in heterojunctions, with lutetium bisphthalocyanine as a partner. Surprisingly, cobalt and copper complexes show opposite behaviors, the first being an [Formula: see text]-type material whereas the latter is a [Formula: see text]-type material, as deduced from the response of the heterojunctions towards ammonia; showing the unusual key role played by the metal center. While the LuPc[Formula: see text]/Cu(Cl[Formula: see text]Pc) complex exhibits a negative response to ammonia, the LuPc[Formula: see text]/Co(Cl[Formula: see text…
High-Speed Machines: Typologies, Standards, and Operation under PWM Supply
2018
This paper presents an overview of the most recent state of the art in the field of high-speed electric machines fed through high-frequency converters. This type of systems is rapidly wide spreading in aeronautical and automotive applications, as well as microturbines. Each typology has its own advantages and downsides, which are analytically presented in this paper. Some types of high-speed electric machines require high-frequency voltage supply, highly stressing the dielectric materials of the winding insulation system. For this reason, in high-speed electric drives, premature failure may occur and a reduction of the total system reliability has been observed in the past years. Such issue…
High-pass energy-filtered photoemission electron microscopy imaging of dopants in silicon.
2008
Differently doped areas in silicon can show strong electron-optical contrast in dependence on the dopant concentration and surface conditions. Photoemission electron microscopy is a powerful surface-sensitive technique suitable for fast imaging of doping-induced contrast in semiconductors. We report on the observation of Si (100) samples with n- and p-type doped patterns (with the dopant concentration varied from 10(16) to 10(19) cm(-3)) on a p- and n-type substrate (doped to 10(15) cm(-3)), respectively. A high-pass energy filter of the entire image enabled us to obtain spectroscopic information, i.e. quantified photo threshold and related photoyield differences depending on the doping lev…