Search results for "semiconductor"
showing 10 items of 974 documents
A Coherent Master Equation for active mode locking in lasers
2015
We present the derivation of a new master equation for active mode locking in lasers that fully takes into account the coherent effects of the light matter interaction through a peculiar adiabatic elimination technique. The coherent effects included in our model could be relevant to describe properly mode-locked semiconductor lasers where the standard Haus’ Master Equation predictions show some discrepancy with respect to the experimental results and can be included in the modelling of other mode locking techniques too.
Monte Carlo Simulation of Harmonic Generation in GaAs structures operating under large-signal Conditions
2007
By using a multiparticles Monte Carlo technique, with a self-consistently coupled one-dimensional Poisson solver, we investigate the dependence of the nonlinear carrier dynamics in GaAs n+nn+ micro e submicro-structures operating under very intense sub-terahertz signals by: (i) the frequency and the intensity of the excitation signal and (ii) the length of the n region.
Performance of the large scale HV-CMOS pixel sensor MuPix8
2019
The Mu3e experiment is searching for the charged lepton flavour violating decay $ ��^+\rightarrow e^+ e^- e^+ $, aiming for an ultimate sensitivity of one in $10^{16}$ decays. In an environment of up to $10^9$ muon decays per second the detector needs to provide precise vertex, time and momentum information to suppress accidental and physics background. The detector consists of cylindrical layers of $50\, ��\text{m}$ thin High Voltage Monolithic Active Pixel Sensors (HV-MAPS) placed in a $1\,\text{T}$ magnetic field. The measurement of the trajectories of the decay particles allows for a precise vertex and momentum reconstruction. Additional layers of fast scintillating fibre and tile detec…
Molecular polarizability of semiconductor clusters and nanostructures
2002
Abstract The interacting-induced-dipoles polarization model implemented in program PAPID is used for the calculation of the molecular dipole–dipole polarizability α . The method is tested with Si n , Ge n and GanAsm small clusters. On varying the number of atoms, the clusters show numbers indicative of particularly polarizable structures. The results for the polarizability are in agreement with reference calculations from Chelikowsky. The bulk limit for the polarizability is estimated from the Clausius–Mossotti relationship. The polarizability trend for these clusters as a function of size is different from what one might have expected. The clusters are all more polarizable than what one mi…
The next generation nuclear instruments: AGATA and NEDA, and nuclear structure studies near N=Z line
2017
The first part of this thesis is devoted to the development of a large array of neutron detectors NEDA (NEutron Detector Array) and their conceptual design using Monte-Carlo simulations. Prior to the development of NEDA, the neutron detection with liquid scintillators is discussed in Chapter 2. In Chapter 3, the design criteria and simulations of NEDA are discussed. NEDA aims to build a neutron detector array with high efficiency, based on liquid scintillators. NEDA will be coupled to the high-purity γ-ray detector arrays, like AGATA, EXOGAM, to be used as a trigger or complementary detector in the contemporary nuclear physics experiments, which aim to investigate the structure of the exoti…
External noise effects on the electron velocity fluctuations in semiconductors
2008
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover this random field can cause a suppression of the total noise power.
Spectral broadening enhancement in silicon waveguides through pulse shaping
2012
Spectral broadening in silicon waveguides is usually inhibited at telecom wavelengths due to some adverse effects related to semiconductor dynamics, namely, two-photon and free-carrier absorption (FCA). In this Letter, our numerical simulations show that it is possible to achieve a significant enhancement in spectral broadening when we properly preshape the input pulse to reduce the impact of FCA on spectral broadening. Our analysis suggests that the use of input pulses with the correct skewness and power level is crucial for this achievemen This work was financially supported by the Plan Nacional Investigación, Desarrollo e Innovación (I+D +I) under the research project TEC2008-05490, by…
Dynamical effects and Terahertz harmonic generation in low-doped bulk semiconductors and submicron structures
2006
We present results obtained using a three-dimensional multivalleys Monte Carlo (MC) model to simulate the nonlinear carrier dynamics under the influence of an intense sub-terahertz electric field in a doped bulk semiconductor. By self-consistently coupling a one-dimensional Poisson solver to the ensemble MC code we simulate also the nonlinear carrier dynamics in n+nn+ structures operating under large-amplitude periodic signals and investigate the voltage-current characteristic hysteresis cycle and the high-order harmonic efficiency. For both cases we discuss the dependence of the nonlinearities and of the harmonic generation efficiency on the frequency and the intensity of the alternating s…
Stationary semiconductor equations
1996
The behaviour of a semiconductor device is usually modelled by three coupled nonlinear partial differential equations of elliptic type. Such a system for the transport of mobile charge carriers was first introduced by Van Roosbroeck [Van Roosbroeck] in 1950. Nowadays there are many models which differ in their choice of unknowns, scales, various types of nonlinearities etc. (see, e.g., [Brezzi], [Groger], [Markowich], [Markowich, Ringhofer, Schmeiser], [Mock, 1972], [Polak, den Heijer, Schilders, Markowich], [Pospisek], [Pospisek, Segeth, Silhan], [Selberherr], [Sze], [Zlamal, 1986]).
Silicon as an Unconventional Detector in Positron Emission Tomography.
2012
Positron emission tomography (PET) is a widely used technique in medical imaging and in studying small animal models of human disease. In the conventional approach, the 511 keV annihilation photons emitted from a patient or small animal are detected by a ring of scintillators such as LYSO read out by arrays of photodetectors. Although this has been a successful in achieving ~5mm FWHM spatial resolution in human studies and ~1mm resolution in dedicated small animal instruments, there is interest in significantly improving these figures. Silicon, although its stopping power is modest for 511 keV photons, offers a number of potential advantages over more conventional approaches. Foremost is it…