Search results for "silicon"

Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter

2021

In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …

Scale-up low-cost synthesis of bimodal mesoporous silicas

2005

Porous pure and doped silicas with pore sizes at two length scales (meso/macroporous) have been prepared through a large scale one-pot surfactant assisted reproducible procedure by using a simple template agent and starting from non-expensive sodium silicate as silicon source. Together with the relative low-cost of the reagents we have used, the simplicity of this method, which moreover is scalable and provides high yields, could be a strong argument for considering its suitability for the production of bimodal porous silicas. Additionally, we present a simple chemical scheme that allows directing the synthesis towards different related materials including both bimodal nanoparticulated meso…

Luminescence of silicon Dioxide — silica glass, α-quartz and stishovite

2011

Abstract This paper compares the luminescence of different modifications of silicon dioxide — silica glass, α-quartz crystal and dense octahedron structured stishovite crystal. Under x-ray irradiation of pure silica glass and pure α-quartz crystal, only the luminescence of self-trapped exciton (STE) is detected, excitable only in the range of intrinsic absorption. No STE luminescence was detected in stishovite since, even though its luminescence is excitable below the optical gap, it could not be ascribed to a self-trapped exciton. Under ArF laser excitation of pure α-quartz crystal, luminescence of a self-trapped exciton was detected under two-photon excitation. In silica glass and stishov…

Silicon dioxide thin film luminescence in comparison with bulk silica

1998

Abstract The luminescence of the self-trapped exciton (STE) in SiO2 films was measured at low temperatures on the background of defect luminescence under cathodoexcitation and compared with bulk silica luminescence. The defect luminescence is mainly caused by non-bridging oxygen centers (a red luminescence band at 1.8 eV) and twofold coordinated silicon centers (blue and ultraviolet luminescence with 2.7 and 4.4 eV bands, respectively). The STE luminescence with a band at 2.3 eV is uniformly distributed within SiO2 film volume. Contrary to defect luminescence, whose intensity increases with irradiation time, the STE luminescence decreases almost to zero in a few seconds of irradiation time.…

Nanostructural depth-profile and field-effect properties of poly(alkoxyphenylene-thienylene) Langmuir-Schäfer thin-films

2008

The correlations between morphological features and field-effect properties of poly(alkoxyphenylene-thiophene) thin Langmuir–Schafer film deposited on differently terminated gate dielectric surfaces, namely bare and methyl functionalized thermal silicon dioxide (t-SiO2), have been systematically studied. The film morphology has been investigated at different film thickness by Scanning Force Microscopy. Films thicker than a few layers show comparable morphology on both dielectric surfaces while differences are seen for the ultra-thin polymer deposit in close proximity to the substrate. Such deposit is notably more heterogeneous on bare t-SiO2, while a more compact and uniform nanogranular st…

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

2014

In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content i…

Programmable Surface Architectures Derived from Hybrid Polyoxometalate-Based Clusters

2011

The exploration of the self-organization of a range of the polyoxometalate-based molecular structures reveals a diverse range of surface patterns and morphologies on solid substrates of technological interest, including methylated and hydroxylated silicon surfaces (namely, SiCH3 and SiOH). By exploiting the interplay between the intrinsic molecular properties and the surface chemistry as well as dynamic spatiotemporal phenomena (e.g., dewetting), we show that these systems can yield 0D, 2D, and 3D architectures via solution deposition at the solid surface, including nanodots, discs, lamellas, porous networks, and layer-by-layer assemblies. In general, we observed that layer-by-layer growth …

2015

Electrically detected magnetic resonance (EDMR) is a commonly used technique for the study of spin-dependent transport processes in semiconductor materials and electro-optical devices. Here, we present the design and implementation of a compact setup to measure EDMR, which is based on a commercially available benchtop electron paramagnetic resonance (EPR) spectrometer. The electrical detection part uses mostly off-the-shelf electrical components and is thus highly customizable. We present a characterization and calibration procedure for the instrument that allowed us to quantitatively reproduce results obtained on a silicon-based reference sample with a “large-scale” state-of-the-art instru…

Nitrogen substitutional defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties

2019

RD and FSG acknowledges the CINECA award (HP10CTG8YY) under the ISCRA initiative, for the availability of high performance computing resources and support.

Spinel-mullite composites with optical properties

1997

The aim of this paper was to study the synthesis and characterization of spinel-containing mullite based materials, using sol-gel techniques. Several gels were prepared, with nominal compositions 3(Al2−2xMx TixO3)·2SiO2 and 3(Al2−xMxO3)·2SiO2, with M=Ni+2 or Co+2 and 0.0≤x≤0.2, by hydrolysis and condensation of mixtures of aluminum, silicon and titanium alkoxides and nickel chloride. Dried gels were homogeneous and displayed a glass transition at around 750°C, which indicated that the system could be described as an amorphous silicoaluminate network.