Search results for "silicon"
showing 10 items of 1391 documents
High-Density Arrays of Germanium Nanowire Photoresistors
2006
Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and photon tracking devices, far-infrared photoresistors, and numerous other devices. During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nan…
Memory effects in MOS capacitors with silicon rich oxide insulators
2000
ABSTRACTTo form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials wereannealed in N2 ambient at temperatures between 950 and 1100 °C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory function of such structures has been investigated in metal-oxidesemiconductor (MOS) capacitors with a SRO film sandwiched be…
10 Gb/s transmission and thermo-optic resonance tuning in silicon-plasmonic waveguide platform
2011
The first system-level experimental results of hybrid Si-DLSPP structures incorporated into a SOI chip are reported. We demonstrate over 7nm thermo-optical tuning of a Si-Plasmonic racetrack-resonator and verify error-free 10Gb/s transmission through 60um Si-Plasmonic waveguide.
Initial light-induced degradation study of multicrystalline modules made from silicon material processed through different manufacturing routes
2012
The paper presents results of initial lightinduced degradation (LID) of multicrystalline silicon photovoltaic (PV) modules made of crystalline silicon from different manufacturing processes. The modules were installed within the Sunbelt, in Hyderabad, India. Current-voltage (I–V) characteristics are measured and infra-red (IR) images of the modules are taken at regular intervals. A relationship of the IV degradation with the IR images is discussed. Results from laboratory LID tests at room temperature are performed parallel to the outdoor degradation of PV modules. It was found that the total LID, measured on the module level, after the initial 40 hours is similar for both materials resulti…
Supercontinuum generation in silicon waveguides based on optical wave-breaking
2014
We theoretically find the third order dispersion that optimizes the spectral broadening induced by optical wave-breaking. It produces supercontinuum spectra spanning beyond 2=3 of an octave in a silicon waveguide pumping at 1550 nm.
Effect of high-k materials in the control dielectric stack of nanocrystal memories
2004
In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.
Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection
2018
We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
Silicon Single Electron Transistors with Single and Multi Dot Characteristics
2000
AbstractSilicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics o…
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
2001
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
Photonic Crystal‐Driven Spectral Concentration for Upconversion Photovoltaics
2014
The main challenge for applying upconversion (UC) to silicon photovoltaics is the limited amount of solar energy harvested directly via erbium-based upconverter materials (24.5 W m–2). This could be increased up to 87.7 W m–2 via spectral concentration. Due to the nonlinear behavior of UC, this could increase the best UC emission by a factor 13. In this paper, the combined use of quantum dots (QDs)—for luminescent down-shifting—and photonic crystals (PCs)—for reshaping the emission—to achieve spectral concentration is shown. This implies dealing with the coupling of colloidal QDs and PC at the high-density regime, where the modes are shifted and broadened. In the first fabricated all-optica…