Search results for "silicon"

First InGaN/GaN thin Film LED using SiCOI engineered substrate

2006

InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…

Surface acceleration during dry laser cleaning of silicon

1999

We report on measurements of the surface acceleration for the application of dry laser cleaning. For that purpose, industrial silicon samples were irradiated by a frequency-doubled Q-switched Nd:YAG laser. The surface displacement was measured by a heterodyne interferometer and recorded by a digital storage oscilloscope. Several hundreds of shots were averaged to give smooth displacement curves which could be derived numerically. The experiments show that the highest accelerations, which are thought to be responsible for the cleaning, occur on the time scale of the laser pulse. Simple theoretical models are in good agreement with the experimental data. The maximal displacement depends only …

Polarization insensitive wavelength conversion of 40 Gb/s DPSK signals in a silicon germanium waveguide

2015

We demonstrate polarization insensitive FWM-based wavelength conversion of 40Gb/s DPSK signals in a SiGe waveguide, with 0.42-dB polarization-dependent loss. A 1.5-dB Dower nenaltv was measured at a BER of 10−9.

Optical activation of a silicon vibrating sensor

1986

The operation of a micromachined silicon vibrating sensor with both optical excitation and optical interrogation is reported. The proper locations at which the optical excitation should be applied for optimum excitation of different modes of resonance are described.

Nonlinear vibrations and hysteresis of micromachined silicon resonators designed as frequency-out sensors

1987

Experimental observation of nonlinear vibrations and hysteresis of micromachined silicon resonators is reported. The experimental results are explained using a simple model in which the restoring force acting in the resonator contains a small cubic term. The effects will impose a limit to the maximum amplitude which can be excited while still maintaining reliability of these devices as frequency-out sensors.

Biosensors, Porous Silicon

2002

Biosensors consist of a biologically active layer that responding to an analyte in solution and a powerful transducer that transforms and amplifies the reaction into a measurable signal. Biosensors can constantly measure the presence, absence, or concentration of specific organic or inorganic substances in short response time and ultimately at low cost. They are used commercially in health care, biotechnological process control, agriculture, veterinary medicine, defense, and environmental pollution monitoring. A common requirement of all of these applications is on-site chemical information—preferably in real time—on some dynamic or rapidly evolving process. Most biosensors are based on mol…

Structure of Oxygen and Silicon Interstitials in Silicon

1999

Assessment of a New Analytical Expression for the Maximum-Power Point Voltage with Series Resistance

2021

This work compares a recently developed analytical expression for the maximum-power point voltage with experimental data, to test its usability for crystalline silicon solar cells. The experimental data covers measurements from 18 multicrystalline silicon solar cells with different bulk resistivities and cell architectures. We show that the expression is able to predict the maximum power obtainable by the measured cells with relative discrepancies below 1%. Additionally, we compare the accuracy of this new expression with two already existing models.

Ordered Mesoporous Silicon Oxynitrides

2001

The synthesis of matrices of embedded semiconducting nanowires.

2004

In this work we report how single crystal nanowires can be assembled into regular arrays using mesoporous thin films to define the architecture. Mesoporous thin films were prepared by a sol-gel method. These provide films of very regular structure and dimensions. The films produced in this way have almost single crystal like structures and can also exhibit strong epitaxy to the underlying silicon substrate. The films are subjected to a supercritical fluid (SCF) environment in which a precursor is decomposed to yield nanowires of metals, semiconductors or oxides. Using these SCF conditions, pore filling is complete and the products are nanowires which are single crystals and structurally ali…