Search results for "silicon"
showing 10 items of 1391 documents
Characterization of Nd-MCM41 obtained by impregnation
2008
Abstract Silica mesoporous molecular sieves (MCM-41), prepared by using micelles as template, were functionalized by means of incipient wetness method. Evidence for the neodymium presence in the silica matrix was obtained by means of EDX. SEM micrographs showed that impregnation does not change significantly MCM-41 morphology. The maintenance of the hexagonal structure was confirmed by XRD pattern analysis. However, the observed loss of long-range ordering, the cell parameter increase and the surface area decrease, observed by gas adsorption technique, were attributed to the introduction of neodymium oxide inside the MCM-41 mesochannels. By FT-IR and Raman spectra it was found that the main…
The Evolution of Individuality at the Molecular and Protocellular Levels
1984
The most important bioelements (= organoelements) hydrogen, carbon, oxygen and nitrogen, are also the most abundant elements throughout the Universe besides helium, neon, and silicon (Fig, 1). In the Universe carbon is about four times as abundant as silicon. Certainly, the abundance of elements in various celestial bodies may vary greatly depending on the history of these celestial bodies.
Formation of layered titania and zirconia catalysed by surface-bound silicatein
2005
Silicatein immobilised on self-assembled polymer layers using a histidine-tag chelating anchor group retains its hydrolytical activity for the formation of biosilica, and catalyses the formation of layered arrangements of biotitania and biozirconia.
Influence Of The Model Parameters On The Noise Performance Of Double-polysilicon BJTs For Microwave LNA's
1997
In the recent post we have measured the noise and the scattering parameters of several series of double polysilicon BJT's over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. From the experimental data, a noisy circuit model has been extracted based on a T-equivalent network. By means of the correlation matrix techniques, novel analytical expressions of the noise parameters have been derived. As a second step, a sensitivity analysis has been performed for evaluating the influence of each model element on the noise performance. The results show how to improve the characteristics of such devices for a better performance when employe…
Signal to Noise Ratio of Silicon Photomultipliers measured in the Continuous Wave Regime
2014
We performed a Signal to Noise Ratio characterization, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the overall current flowing to the device. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function …
Radiation Tolerance Tests of Small-Sized CsI(Tl) Scintillators Coupled to Photodiodes
2009
Radiation tolerance of small-sized CsI (Tl) crystals coupled to silicon photodiodes was studied by using protons. Irradiations up to the fluence of 1012 protons/cm2 were used. Degradation of light output by less than 5% was achieved.
Detector-electrode for alpha spectrometry in water sample, numerical and early feasibility investigation toward thermocompression bonding assembly pr…
2020
International audience; This study focuses on the feasibility of a detector-electrode for direct alpha measurement in aqueous samples. Such a device could be made by adding a boron doped diamond electrode on top of a standard silicon detector, with bonding and insulating layers. The impact of these different layers has been investigated by Monte-Carlo simulation (MCNP6), to find a compromise between alpha detection of the silicon, electrode and shielding properties of the diamond. The assembly process involving thermocompression between both substrates was successfully achieved under a clean room conditions.
The DAMPE silicon–tungsten tracker
2016
Abstract The DArk Matter Particle Explorer (DAMPE) is a spaceborne astroparticle physics experiment, launched on 17 December 2015. DAMPE will identify possible dark matter signatures by detecting electrons and photons in the 5 GeV–10 TeV energy range. It will also measure the flux of nuclei up to 100 TeV, for the study of the high energy cosmic ray origin and propagation mechanisms. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon–tungsten tracker–converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is composed of six tracking planes of 2 orthogonal layers of single-sided micro-strip detectors, for a total detector surface of ca. 7 m2. T…
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
2020
Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes.