Search results for "single event effect"

showing 5 items of 15 documents

The methodology for active testing of electronic devices under the radiations

2018

The methodology, developed for active testing of electronic devices under the radiations, is presented. The test set-up includes a gamma-ray facility, the hardware board/fixtures and the software tools purposely designed and realized. The methodology is so wide-ranging to allow us the verification of different classes of electronic devices, even if only application examples for static random access memory modules are reported.

business.industryComputer scienceSettore ING-IND/20 - Misure E Strumentazione NucleariTesting methodologies Electronic Devices Total Ionizing Dose Single Event Effects Gamma rays.Electrical engineeringelectronic devicetotal ionizing dosesingle event effectNuclear Energy and Engineeringtesting methodologygamma raylcsh:QC770-798lcsh:Nuclear and particle physics. Atomic energy. RadioactivityElectronicsSafety Risk Reliability and QualitybusinessNuclear Technology and Radiation Protection
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New Capabilities of the FLUKA Multi-Purpose Code

2022

We would like to deeply thank the CERN Knowledge Transfer and Legal Service teams for their essential and extended support. Our appreciation also goes to the FLUKA.CERN Collaboration Board members for their strong commitment.

mallintaminendeuteronComputerSystemsOrganization_COMPUTERSYSTEMIMPLEMENTATIONSingle event effects (SEE)acceleratorQC1-999Materials Science (miscellaneous)beam-matter interactionBiophysicsGeneral Physics and Astronomysingle event effects (see)hiukkasfysiikkamedical physicshigh energy physicsFLUKAbenchmarkcrystal channelingbismuthsimulointiddc:530High energy physicsPhysical and Theoretical ChemistryHardware_REGISTER-TRANSFER-LEVELIMPLEMENTATIONMathematical Physicshiukkassäteilymonte carlo transportflukafacilityPhysicstietokoneohjelmatMonte Carlo transportComputing and Computersddc:Monte Carlo -menetelmätBeam-matter interactionsäteilyfysiikkaCrystal channelingaluminumbeamactivationMedical physicssimulationsParticle Physics - Experimentproton
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Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

2017

Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size. peerReviewed

protonitNuclear and High Energy PhysicsProtonfloating gate devicesNAND gateFlash memories01 natural sciencesComputer Science::Hardware ArchitectureIonizationFlash memories; floating gate devices; protons; single event effects; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic Engineering0103 physical sciencesHardware_ARITHMETICANDLOGICSTRUCTURESElectrical and Electronic Engineeringflash-muistit010302 applied physicsPhysicsRange (particle radiation)ta114ta213protons010308 nuclear & particles physicsbusiness.industryElectrical engineeringsingle event effectsNon-volatile memoryNuclear Energy and EngineeringLogic gateAtomic physicsbusinessEvent (particle physics)Energy (signal processing)IEEE Transactions on Nuclear Science
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Measurements of Low-Energy Protons using a Silicon Detector for Application to SEE Testing

2021

A silicon detector with a fast electronics chain is used for the dosimetry of protons in the range 0.5-5 MeV at the Centro Nacional de Aceleradores (CNA) 3 MV Tandem laboratory in Seville, Spain. In this configuration, measurements can be performed in pulsed mode, using a digitizer to record event-by-event proton energy depositions. The distributions of deposited energy were obtained thanks to a calibration with an alpha source. Measurements of flux and deposited energy are used to enable single event effect (SEE) testing on selected static random access memories (SRAMs).

protonitNuclear and High Energy PhysicspiiSilicon detectorMaterials sciencebusiness.industrySingle event effectskalibrointiLow energysäteilyfysiikkaNuclear Energy and EngineeringilmaisimetdosimetritOptoelectronicsSilicon detectorElectrical and Electronic EngineeringDetectors and Experimental TechniquesLow-energy protonsbusinessIEEE Transactions on Nuclear Science ( Volume: 69, Issue: 3, March 2022)
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Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

2018

Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …

silicon carbidesingle-event burnoutthermal coefficients of silicon carbidepower diodessingle event effectsheavy ionsjunction barrier schottky (JBS) diode
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