Search results for "sputtering"

showing 10 items of 136 documents

Magnetron sputtering fabrication of α-Al2O3:Cr powders and their thermoluminescence properties

2018

The authors gratefully acknowledge the financial support for this work from research grant ERA.NET RUS Plus Nr.609556.

Materials scienceengineering.material7. Clean energy01 natural sciencesThermoluminescence030218 nuclear medicine & medical imaging03 medical and health sciencesChromium doped alumina0302 clinical medicineCoatingSputtering0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]CeramicIrradiationInstrumentation010302 applied physicsRadiationDosimeterDopingSputter depositionChemical engineeringvisual_artvisual_art.visual_art_mediumengineeringThermostimulated luminescenceMagnetron sputteringRadiation Measurements
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Photo-assisted O− and Al− production with a cesium sputter ion source

2021

It has been recently proposed that the production of negative ions with cesium sputter ion sources could be enhanced by laser-assisted resonant ion pair production. We have tested this hypothesis by measuring the effect of pulsed diode lasers at various wavelengths on the O− and Al− beam current produced from Al2O3 cathode of a cesium sputter ion source. The experimental results provide evidence for the existence of a wavelength-dependent photo-assisted enhancement of negative ion currents but cast doubt on its alleged resonant nature as the effect is observed for both O− and Al− ions at laser energies above a certain threshold. The beam current transients observed during the laser pulses s…

Materials scienceionitchemistry.chemical_elementhiukkaskiihdyttimetLaserlasertekniikkaCathodeIon sourcelaw.inventionIonXenonchemistrylawSputteringPhysics::Plasma PhysicsCaesiumPhysics::Atomic PhysicsAtomic physicsBeam (structure)
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Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

2012

The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…

Materials scienceta221Analytical chemistryplasma etchingAtomic layer depositionEtch pit densityEtching (microfabrication)SputteringAIN filmsetchingta318Reactive-ion etchingThin filmta216ta116plasma depositionPlasma etchingta213ta114business.industryPhysicsSurfaces and Interfacesatomikerroskasvatusplasma materials processingCondensed Matter PhysicsSurfaces Coatings and Filmsplasmakasvatusthin filmsOptoelectronicsbusinessBuffered oxide etch
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Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

2008

This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…

Materials sciencetantalum nitrideAnalytical chemistryTantalumchemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsGrain sizeSurfaces Coatings and Filmschemistry.chemical_compoundTantalum nitridechemistryX-ray photoelectron spectroscopyElectrical resistivity and conductivitySputteringXPSMaterials ChemistryAFMThin filmplastic electronicsSIMSSheet resistanceplastic electronics tantalum nitride XPS AFMSIMSSurface and Interface Analysis
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Round Robin computer simulation of ejection probability in sputtering

1989

Abstract We have studied the ejection of a copper atom through a planar copper surface as a function of recoil velocity and depth of origin. Results were obtained from six molecular dynamics codes, four binary collision lattice simulation codes, and eight Monte Carlo codes. Most results were found with a Born-Mayer interaction potential between the atoms with Gibson 2 parameters and a planar surface barrier, but variations on this standard were allowed for, as well as differences in the adopted cutoff radius for the interaction potential, electronic stopping, and target temperature. Large differences were found between the predictions of the various codes, but the cause of these differences…

Nuclear and High Energy PhysicsChemistryBinary number02 engineering and technology021001 nanoscience & nanotechnologyCollision01 natural sciencesComputational physicsMolecular dynamicsPlanarSputteringLattice (order)0103 physical sciencesRecoil velocityCutoffStatistical physics010306 general physics0210 nano-technologyInstrumentation
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Utilisation of a sputtering device for targetry and diffusion studies

2004

A novel device for versatile sputtering applications is described. The apparatus design is realised for fulfilling the demands of both nuclear physics experiment target production and serial sectioning in solid-state diffusion studies with radiotracers. Results of several tests are reported, characterising the devise performance in these two differing applications.

Nuclear and High Energy PhysicsFabricationMaterials scienceSputtering0103 physical sciencesNanotechnology02 engineering and technologyDiffusion (business)021001 nanoscience & nanotechnology010306 general physics0210 nano-technology01 natural sciencesInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Ion-sputtering deposition of Ca–P–O films for microscopic imaging of osteoblast cells

2007

Abstract An ion-beam sputtering technique was used to produce Ca–P–O films on borosilicate glass at room temperature from hydroxyapatite targets using nitrogen, argon and krypton beams at different acceleration voltages. The sputtering target was pressed from high purity hydroxyapatite powder or mixture of high purity hydroxyapatite powder and red phosphorus in order to optimise the film composition. The film composition, determined using time-of-flight elastic recoil detection analysis (TOF–ERDA), was found to be strongly dependent on the ion energy used for deposition. By extra doping of the target with P the correct Ca/P atomic ratio in the deposited films was reached. The films deposite…

Nuclear and High Energy PhysicsIon beam analysisArgonMaterials scienceAnnealing (metallurgy)Borosilicate glassAnalytical chemistrychemistry.chemical_elementAmorphous solidElastic recoil detectionchemistrySputteringAtomic ratioInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Improved EDGE2D-EIRENE simulations of JET ITER-like wall L-mode discharges utilising poloidal VUV/visible spectral emission profiles

2015

A discrepancy in the divertor radiated powers between EDGE2D-EIRENE simulations, both with and without drifts, and JET-ILW experiments employing a set of NBI-heated L-mode discharges with step-wise density variation is investigated. Results from a VUV/visible poloidally scanning spectrometer are used together with bolometric measurements to determine the radiated power and its composition. The analysis shows the importance of D line radiation in contributing to the divertor radiated power, while contributions from D radiative recombination are smaller than expected. Simulations with W divertor plates underestimate the Be content in the divertor, since no allowance is made for Be previously …

Nuclear and High Energy PhysicsJet (fluid)ta214TokamakMaterials scienceta114SpectrometerDivertorta221BolometerEffective radiated power01 natural sciences010305 fluids & plasmaslaw.inventionNuclear Energy and EngineeringlawSputtering0103 physical sciencesGeneral Materials ScienceSpontaneous emissiontokamaksAtomic physics010306 general physicsta218Journal of Nuclear Materials
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A study of solar thermal absorber stack based on CrAlSiNx/CrAlSiNxOy structure by ion beams

2019

Renewable energies are foreseen as a major energy resource for next generations. Among several energy sources and technologies available, Concentrated Solar Power (CSP) technology has a great potential, but it needs to be optimised, in particular to reduce the costs, with an increase of the operating temperature and long term stability. This goal can be achieved by tailoring the composition and multilayer structure of films. In this work we present and discuss the results obtained from solar absorber coatings based on nitride/oxynitride structures. A four-layer film structure, W/CrAlSiNx(HA)/CrAlSiNxOy(LA)/SiAlOx, was deposited on stainless steel substrates using magnetron sputtering deposi…

Nuclear and High Energy PhysicsMaterials scienceCrAlSiNx /CrAlSiNxOy02 engineering and technologyaurinkoenergia010402 general chemistry01 natural sciences7. Clean energyRutherford Backscattering Spectrometry (RBS)time of flight elastic recoil detection analysis (TOF-ERDA)Operating temperatureSputteringConcentrated solar power:Engenharia dos Materiais [Engenharia e Tecnologia]Thermal stabilityCrAlSiN /CrAlSiN O x x yInstrumentationpinnoitteetTime of flight Elastic Recoil Detection Analysis (TOF-ERDA)CrAlSiNx/CrAlSiNxOyScience & TechnologySolar selective absorberbusiness.industrySputteringSolar selective absorber ; Rutherford Backscattering Spectrometry (RBS) ; Time of flight Elastic Recoil Detection Analysis (TOF-ERDA) ; CrAlSiNx/CrAlSiNxOySputteringSputter deposition021001 nanoscience & nanotechnologyRutherford backscattering spectrometry0104 chemical sciencesElastic recoil detectionsolar selective absorberspektrometriaEngenharia e Tecnologia::Engenharia dos MateriaisOptoelectronicssputteringohutkalvot0210 nano-technologybusinessEnergy source
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Multi-technique characterization of gold electroplating on silver substrates for cultural heritage applications

2017

Proceedings of the 12th European Conference on Accelerators in Applied Research and Technology (ECAART12).-- et al.

Nuclear and High Energy PhysicsMaterials scienceEffective densityXRFEnergy-dispersive X-ray spectroscopy02 engineering and technologyengineering.material01 natural sciencesElectrodepositionCoatingSputteringSEM-EDXHomogeneity (physics)Gilded silverElectroplatingInstrumentationRBS010401 analytical chemistryMetallurgy021001 nanoscience & nanotechnology0104 chemical sciencesAnodeengineering0210 nano-technologyVoltageNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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