Search results for "sputtering"
showing 10 items of 136 documents
Processing and properties of nanocrystalline Pb(Sc0.5Ta0.5)O3, Pb(Sc0.5nb0.5)O3 and Pb(Mg1/3Nb2/3)O3 films produced by RF-sputtering from ceramic tar…
2000
Abstract Nanocrystalline thin films of different relaxor materials, namely Pb(Sc0.5Ta0.5)O3 (PST), Pb(Sc0.5Nb0.5)O3(PSN), Pb(Mg1/3Nb2/3)O3(PMN) have been produced by RF-sputtering to investigate whether it will affect their dielectric properties if their grain size is reduced to the dimensions known from their nanodomains. The XRD shows that the amorphous film crystallizes in pyrochlore structure at lower temperatures and short times. Annealing at higher temperatures and far longer time intervals leads to an increasing amount of perovskite phase with a grain size in the nanometer range. These results including dielectric measurements will be presented and discussed.
Shape memory NiTi thin films deposited at low temperature
1999
Abstract NiTi shape memory alloy (SMA) thin films have the potential to become high performance actuators for micro-electromechanical systems. Low temperature crystallized NiTi films would ensure a good compatibility with microelectronic processes and polymers. To avoid the drawbacks induced by annealing, we have tried to obtain low temperature crystallized RF sputtered NiTi films by optimising deposition parameters. We have found that NiTi films containing an excess of Ti (∼52%) were crystallized when deposited on Si(100) substrates heated up to only 473 K. NiTi/Si(n) Schottky diodes I–V characteristics showed a temperature dependence indicating structural transition in the NiTi electrode.…
Understanding the Conversion Process of Magnetron-Deposited Thin Films of Amorphous ReO$_x$ to Crystalline ReO$_3$ upon Thermal Annealing
2020
Crystal growth & design 20(9), 6147 - 6156 (2020). doi:10.1021/acs.cgd.0c00848
Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells
2011
Abstract The class of half-Heusler compounds opens possibilities to find alternatives for II–VI or III–V compound semiconductors. We aim to find suitable substitutes for the cadmium sulphide buffer layer in chalcopyrite-based thin film solar cells, where the buffer layer is located between the p-type chalcopyrite absorber and an n-type transparent window layer. We report here the preparation of radio-frequency-sputtered lithium copper sulphide “LiCuS” and lithium zinc phosphide “LiZnP” films. The optical analysis of these films revealed band gaps between 1.8 and 2.5 eV, respectively. Chemical properties of the film surface and both interfaces between the film and a Cu ( In , Ga ) Se 2 layer…
Influence of Ag, Cu dopants on the second and third harmonic response of ZnO films
2009
International audience; Silver- and copper-doped ZnO films were prepared by radio-frequency (RF)-magnetron sputtering on glass and quartz substrates. The influence of dopants content on the microstructural evolution and optical as well as nonlinear optical (NLO) properties were investigated. It has been found that the grain sizes were enlarged with increasing of Ag, Cu dopants amount in ZnO films. The Ag or Cu doping leads to the optical band gap narrowing. Besides, the second-order NLO response of Ag- and Cu-doped ZnO films is lower than that of undoped ZnO film. The second harmonic generation (SHG) efficiency of the ZnO:Ag film was found to be higher than that of the ZnO:Cu film at the si…
Microhardness and adhesion measurements of reactively sputtered TiN/AlN multilayer coatings deposited as function of mass-flow of nitrogen
1998
Abstract Multilayer coatings of (Ti, Al)N x have been deposited by reactive sputtering from Ti and Al targets in a side-by-side configuration on WC and stainless steel substrates. The rotation of the substrate holder varied from 2 to 14 r.p.m. corresponding to a bilayer thickness of 0.8–8 nm. The acoustic emission scratch technique for adhesion measurements was used for studying coating performance, and critical load values for the coatings on WC substrate up to 150 N were obtained. The Vickers microhardness in the load range 0.003–2 N was measured, and in order to obtain true hardness values, an optimal range of indentation depth and coating thickness was determined. Depending on the nitro…
Ferroelectricity and structure of BaTiO grown on YBa Cu O thin films
2000
We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O \(_{7 - \delta }\) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O \(_{7 - \delta }\) and BaTiO3 were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO3 films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm2. At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indica…
Thin epitaxial films of the Heusler compound
2005
Abstract We prepared thin films of the Heusler compound Co 2 Cr 0.6 Fe 0.4 Al with the B2 structure on a-plane (1 1 2 ¯ 0) Al 2 O 3 by sputtering. Films grown at high temperatures ( T ⩾ 600 ∘ C ) on Al 2 O 3 are fully epitaxial with the (1 1 0) and (1 1 ¯ 0) planes of the film parallel to the (1 1 2 ¯ 0) and (0 0 0 1) planes of the substrate, respectively. These epitaxial films possess a higher surface roughness than films grown at room temperature. The films show nearly rectangular hysteresis loops with coercive fields of the order of 10 mT. Magnetooptical Kerr measurements show an in-plane anisotropy of the magnetization with the easy axis in { 0 0 1 } direction. Hall measurements s…
Flexible high efficiency perovskite solar cells
2014
Flexible perovskite based solar cells with power conversion efficiencies of 7% have been prepared on PET based conductive substrates. Extended bending of the devices does not deteriorate their performance demonstrating their suitability for roll to roll processing.
Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Films
2016
Amorphous carbon (a-C) films with varying oxygen content were deposited by closed-field unbalanced magnetron sputtering with the aim to understand the effect of oxygen on the structural and physical properties of the films and subsequently correlate these changes with electrochemical properties. The a-C films were characterized by transmission electron microscopy, helium-ion microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and time-of-flight elastic recoil detection analysis. The electrochemical properties were studied by electrochemical impedance spectroscopy and cyclic voltammetry with several redox systems (Ru(NH3)62+/3+, Fe(CN)64−/3−, dopamine an…