Search results for "ta213"

showing 10 items of 128 documents

Essential Measurements for Finite Element Simulations of Magnetostrictive Materials

2018

We discuss which magnetoelastic material properties are essential to measure in order to model magnetostrictive materials in finite element simulations. We show knowing the magnetic constitutive relation is sufficient, if the elastic behavior without magnetic field is known a priori. We neglect hysteresis, and our starting point is to express the effect of mechanical deformation on the magnetic constitutive relation with a small strain tensor and magnetic flux density. It follows that the (energetic) state of a magnetostrictive material is independent of its history. Then, a certain choice of history allows us to keep magnetism and elasticity distinct. We demonstrate with open source softwa…

MagnetismConstitutive equation02 engineering and technologyfinite element analysismagnetostriction01 natural sciencesCondensed Matter::Materials Sciencestressstrain0103 physical sciencesTensorElectrical and Electronic Engineering010302 applied physicsPhysicsrasitusta213magnetomechanical couplingta111MagnetostrictionMechanics021001 nanoscience & nanotechnologyMagnetic hysteresisFinite element methodElectronic Optical and Magnetic MaterialsMagnetic fieldHysteresistensile strengthvetolujuus0210 nano-technology
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Validating rationale of group-level component analysis based on estimating number of sources in EEG through model order selection

2012

This study addresses how to validate the rationale of group component analysis (CA) for blind source separation through estimating the number of sources in each individual EEG dataset via model order selection. Control children, typically reading children with risk for reading disability (RD), and children with RD participated in the experiment. Passive oddball paradigm was used for eliciting mismatch negativity during EEG data collection. Data were cleaned by two digital filters with pass bands of 1-30 Hz and 1-15 Hz and a wavelet filter with the pass band narrower than 1-12 Hz. Three model order selection methods were used to estimate the number of sources in each filtered EEG dataset. Un…

MaleSpeech recognitionMismatch negativityElectroencephalographyNeuropsychological TestsBlind signal separationModels Biologicalta3112DyslexiaComponent analysismedicineHumansComputer SimulationLongitudinal StudiesChildOddball paradigmEvoked PotentialsMathematicsta217Brain MappingPrincipal Component Analysismedicine.diagnostic_testFourier Analysista213General NeuroscienceReproducibility of ResultsElectroencephalographyFilter (signal processing)Principal component analysisFemaleDigital filterJournal of Neuroscience Methods
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Social Network-Based Content Delivery in Device-to-Device Underlay Cellular Networks Using Matching Theory

2017

With the popularity of social network-based services, the unprecedented growth of mobile date traffic has brought a heavy burden on the traditional cellular networks. Device-to-device (D2D) communication, as a promising solution to overcome wireless spectrum crisis, can enable fast content delivery based on user activities in social networks. In this paper, we address the content delivery problem related to optimization of peer discovery and resource allocation by combining both the social and physical layer information in D2D underlay networks. The social relationship, which is modeled as the probability of selecting similar contents and estimated by using the Bayesian nonparametric models…

Matching (statistics)General Computer ScienceComputer scienceBayesian nonparametric modelsDistributed computing02 engineering and technology0203 mechanical engineeringcontent delivery0202 electrical engineering electronic engineering information engineeringWirelessGeneral Materials ScienceResource managementUnderlaymatching theoryBlossom algorithmta113Social networkta213business.industryQuality of serviceGeneral Engineering020302 automobile design & engineering020206 networking & telecommunicationsdevice-to-device communicationCellular networkResource allocationsocial networklcsh:Electrical engineering. Electronics. Nuclear engineeringbusinesslcsh:TK1-9971IEEE Access
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Characterization and Electrochemical Properties of Oxygenated Amorphous Carbon (a-C) Films

2016

Amorphous carbon (a-C) films with varying oxygen content were deposited by closed-field unbalanced magnetron sputtering with the aim to understand the effect of oxygen on the structural and physical properties of the films and subsequently correlate these changes with electrochemical properties. The a-C films were characterized by transmission electron microscopy, helium-ion microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and time-of-flight elastic recoil detection analysis. The electrochemical properties were studied by electrochemical impedance spectroscopy and cyclic voltammetry with several redox systems (Ru(NH3)62+/3+, Fe(CN)64−/3−, dopamine an…

Materials scienceGeneral Chemical EngineeringInorganic chemistryAnalytical chemistrychemistry.chemical_element02 engineering and technology010402 general chemistry01 natural sciencesOxygenRedoxunbalanced magnetron sputteringElectrochemistryoxygenated amorphous carbonta114ta213021001 nanoscience & nanotechnologyAscorbic acidelectron transfercyclic voltammetry0104 chemical sciencesAmorphous solidDielectric spectroscopyCarbon filmelectrochemical impedance spectroscopyAmorphous carbonchemistryCyclic voltammetry0210 nano-technologyElectrochimica Acta
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Coded excitation speeds up the detection of the fundamental flexural guided wave in coated tubes

2016

The fundamental flexural guided wave (FFGW) permits ultrasonic assessment of the wall thickness of solid waveguides, such as tubes or, e.g., long cortical bones. Recently, an optical non-contact method was proposed for ultrasound excitation and detection with the aim of facilitating the FFGW reception by suppressing the interfering modes from the soft coating. This technique suffers from low SNR and requires iterative physical scanning across the source-receiver distance for 2D-FFT analysis. This means that SNR improvement achieved by temporal averaging becomes time-consuming (several minutes) which reduces the applicability of the technique, especially in time-critical applications such as…

Materials scienceGeneral Physics and Astronomyengineering.materialLONG BONES01 natural sciences114 Physical sciencesLamb wavesOpticsCoatingBinary Golay codeFlexural strength0103 physical sciencesTHICKNESSaaltojohteet010301 acousticsHOLLOW CYLINDERULTRASOUNDta217010302 applied physicsGuided wave testingta114ta213business.industryUltrasoundultrasonographylcsh:QC1-999LAMB WAVESwave guidesengineeringultraäänitutkimusultrasonic excitationUltrasonic sensorwall thicknessbusinesslcsh:PhysicsExcitationAIP Advances
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Properties of AlN grown by plasma enhanced atomic layer deposition

2011

Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of 100–300 °C with plasma discharge times between 2.5 and 30 s. The AlN films were shown to be hydrogen rich having H concentrations in the range of 13–27 at.% with inverse dependence on the growth temperature. The carbon and oxygen concentrations in the films were less than 2.6% and 0.2%, respectively. The refractive index and mass density of the f…

Materials scienceHydrogenta221Analytical chemistryGeneral Physics and Astronomychemistry.chemical_elementOxygenPlasmaAtomic layer depositionCrystallinityta318ta216ta116Aluminum nitrideta213ta114Surfaces and InterfacesGeneral ChemistryAtmospheric temperature rangeCondensed Matter PhysicsSurfaces Coatings and FilmsAmorphous solidAtomic Layer DepositionchemistryCarbonRefractive indexApplied Surface Science
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First experiments with gasdynamic ion source in CW mode.

2016

A new type of ECR ion source—a gasdynamic ECR ion source—has been recently developed at the Institute of Applied Physics. The main advantages of such device are extremely high ion beam current with a current density up to 600–700 emA/cm2 in combination with low emittance, i.e., normalized RMS emittance below 0.1 π mm mrad. Previous investigations were carried out in pulsed operation with 37.5 or 75 GHz gyrotron radiation with power up to 100 kW at SMIS 37 experimental facility. The present work demonstrates the first experience of operating the gasdynamic ECR ion source in CW mode. A test bench of SMIS 24 facility has been developed at IAP RAS. 24 GHz radiation of CW gyrotron was used for p…

Materials scienceIon beamPlasma parameterscontinuous wave mode01 natural sciences010305 fluids & plasmasIonlaw.inventionOpticslawGyrotron0103 physical scienceselectron cyclotron resonance ion sourcesThermal emittanceInstrumentation010302 applied physicsta114ta213business.industryion beamsHigh voltageIon sourceAtomic physicsbusinessCurrent densityThe Review of scientific instruments
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Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

2016

Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the…

Materials scienceNanostructureAnnealing (metallurgy)ta221Analytical chemistry02 engineering and technologyNitride01 natural sciencesimpuritiesAtomic layer depositionImpurity0103 physical sciences010302 applied physicsta213Wide-bandgap semiconductorSurfaces and Interfacesatomikerroskasvatus021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and FilmsAmorphous solidCarbon filmatomic layer depositionaluminum nitride films0210 nano-technologyepäpuhtaudetJournal of Vacuum Science and Technology A
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Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films

2017

Blistering of protective, structural, and functional coatings is a reliability risk pestering films ranging from elemental to ceramic ones. The driving force behind blistering comes from either excess hydrogen at the film-substrate interface or stress-driven buckling. Contrary to the stress-driven mechanism, the hydrogen-initiated one is poorly understood. Recently, it was shown that in the bulk Al-Al2O3 system, the blistering is preceded by the formation of nano-sized cavities on the substrate. The stress-and hydrogen-driven mechanisms in atomic-layer-deposited (ALD) films are explored here. We clarify issues in the hydrogen-related mechanism via high-resolution microscopy and show that at…

Materials sciencePhysics and Astronomy (miscellaneous)Siliconchemistry.chemical_element02 engineering and technologySubstrate (electronics)ceramicsmikroskopia01 natural sciencespiezoelectric filmskeramiikkaStress (mechanics)Atomic layer depositionTHIN-FILMSALUMINUM-OXIDE0103 physical sciencesWATERCRYSTAL-STRUCTURECeramicThin filmComposite materialSILICON010302 applied physicsta213ta114HYDROGEN021001 nanoscience & nanotechnologyDIFFUSIONdermatologychemistrythin filmsTransmission electron microscopyvisual_artvisual_art.visual_art_mediummicroscopyGROWTHihotautioppiohutkalvot0210 nano-technologyLayer (electronics)
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Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

Materials scienceSchottky barrierchemistry.chemical_elementSchottky diodes01 natural sciencesIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundXenonsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodeAngle of incidencemodelingchemistryOptoelectronicsbusinession radiation effects
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