Search results for "thermoelectric"

Charge carrier concentration optimization of thermoelectric p-type half-Heusler compounds

2015

The carrier concentration in the p-type half-Heusler compound Ti0.3Zr0.35Hf0.35CoSb1−xSnx was optimized, which is a fundamental approach to enhance the performance of thermoelectric materials. The optimum carrier concentration is reached with a substitution level x = 0.15 of Sn, which yields the maximum power factor, 2.69 × 10−3 W m−1 K−2, and the maximum ZT = 0.8. This is an enhancement of about 40% in the power factor and the figure of merit compared to samples with x = 0.2. To achieve low thermal conductivities in half-Heusler compounds, intrinsic phase separation is an important key point. The present work addresses the influence of different preparation procedures on the quality and re…

Topological insulators and thermoelectric materials

2012

Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the Bi2Se family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and the…

High Electron Mobility and Disorder Induced by Silver Ion Migration Lead to Good Thermoelectric Performance in the Argyrodite Ag8SiSe6

2017

Superionic chalcopyrites have recently attracted interest in their use as potential thermoelectric materials because of extraordinary low thermal conductivities. To overcome long-term stability issues in thermoelectric generators using superionic materials at evaluated temperatures, materials need to be found that show good thermoelectric performance at moderate temperatures. Here, we present the structural and thermoelectric properties of the argyrodite Ag8SiSe6, which exhibits promising thermoelectric performance close to room temperature.

Laser Floating Zone Growth: Overview, Singular Materials, Broad Applications, and Future Perspectives

2021

This article belongs to the Special Issue Laser-Induced Crystallization.

High-voltage measurements on the 5 ppm relative uncertainty level with collinear laser spectroscopy

2018

We present the results of high-voltage collinear laser spectroscopy measurements on the 5 ppm relative uncertainty level using a pump and probe scheme at the transition of involving the metastable state. With two-stage laser interaction and a reference measurement we can eliminate systematic effects such as differences in the contact potentials due to different electrode materials and thermoelectric voltages, and the unknown starting potential of the ions in the ion source. Voltage measurements were performed between −5 kV and −19 kV and parallel measurements with stable high-voltage dividers calibrated to 5 ppm relative uncertainty were used as a reference. Our measurements are compatible …

2018

An analytical model describing the thermoelectric potential production in magnetic nanofluids (dispersions of magnetic and charged colloidal particles in liquid media) is presented. The two major entropy sources, the thermogalvanic and thermodiffusion processes are considered. The thermodiffusion term is described in terms of three physical parameters; the diffusion coefficient, the Eastman entropy of transfer and the electrophoretic charge number of colloidal particles, which all depend on the particle concentration and the applied magnetic field strength and direction. The results are combined with well-known formulation of thermoelectric potential in thermogalvanic cells and compared to …

Thermoelectric properties of p-type Bi2Sr2Co2O9 glass-ceramics

2014

In the oxide system of Bi–Sr–Co glass melts have been prepared by adding a small amount of glass formers. A crystallization leads to crystalline phases of Bi8Sr8Co4O25, BiSrCo2Ox and Bi2Sr2Co2O9 (BC-222) densely embedded into a residual glass phase. This work shows the possibility of obtaining microstructured bulk material with low thermal conductivity and relatively high electrical conductivity via such a glass ceramic approach. Furthermore the stability of these materials under thermal cycling for temperatures up to 700 °C is shown. A characterization of the thermoelectric properties leads to a figure of merit (ZT) between 0.008 and 0.018.

Phonon Bridge Effect in Superlattices of Thermoelectric TiNiSn/HfNiSn With Controlled Interface Intermixing

2020

© 2020 by the authors

La 1−xCaxMnO3 semiconducting nanostructures: morphology and thermoelectric properties

2014

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1−xCa x MnO3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has b…

Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes

2016

We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobel…