Search results for "thin film"

showing 10 items of 1200 documents

TOTAL INTERNAL REFLECTION ELLIPSOMETRY FOR THE SPECTROSCOPIC INVESTIGATION OF ULTRATHIN SILVER/OXIDE FILMS

2013

Thin filmSettore ING-INF/01 - Elettronica
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Engineering 3D nanoscale order in molecular thin films for organic photovoltaics

2010

Thin films Nanoengineering organic photovoltaics
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Nitrogen plasma pressure influence on the composition of TiNxOy sputtered films

2002

Thin films of TiNxOy were deposited by d.c. magnetron sputtering on glass substrates using an (Ar+,N2) plasma and Ti target. The N2 partial pressure was changed from 2.3 × 10−4 mbar to 4.6 × 10−3 mbar in order to obtain films with increasing nitrogen contents. X-ray photoelectron spectroscopy was used to determine the as-deposited composition. The presence of oxygen, which is probably due to contamination from the residual atmosphere in the vacuum chamber, is always detected, both in the surface layers and in the bulk of the films, confirming the formation of TiNxOy. When the nitrogen partial pressure was increased, a maximum for the nitrogen content in the films was reached, corresponding …

Thin layersChemistryAnalytical chemistrychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryPartial pressureSputter depositionCondensed Matter PhysicsNitrogenSurfaces Coatings and FilmsSecondary ion mass spectrometryX-ray photoelectron spectroscopyMaterials ChemistryThin filmTinSurface and Interface Analysis
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Preparation of photocatalytic nanostructured TiO2 thin films

2008

TiO2 thin films
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Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors

2018

The paper presents the resistive switching of electroforming-free Ti/anodic- TiO 2 /Cu memristors. Anodic TiO 2 thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.

Titanium DioxideMaterials sciencebusiness.industryAnodizingMemristorAnodizingMemristorRRAMSettore ING-INF/01 - Elettronicalaw.inventionAnodechemistry.chemical_compoundSettore ING-IND/23 - Chimica Fisica ApplicatachemistrylawResistive switchingTitanium dioxideOptoelectronicsThin filmPhotolithographybusinessCrossbar arrayMultistate resistanceMicroscale chemistry
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Micro/nanostructured thin films : synthesis by ALD of composites associating TiO2 inverse opals and gold nanoparticles for photocatalysis applications

2021

The aim of this work was to improve the photocatalytic properties of titanium dioxide (TiO2) thin films, a semiconductor that is widely used for photocatalysis applications, particularly for the treatment of polluted water. For this purpose, two complementary approaches were studied: increasing the surface area available for photocalatytic reactions and coupling between TiO2 and gold nanoparticles.. For the first approach, TiO2 thin films with different morphological structures were fabricated by Atomic Layer Deposition: dense and porous flat films, and inverse opals films.In order to evaluate photocatalytic activity of the different films, the degradation of methylene blue in aqueous solut…

Titanium Dioxide[CHIM.OTHE] Chemical Sciences/OtherOpales inversesPhotocatalyseAtomic Layer Deposition (ALD)Gold nanoparticlesInverse opalsFilms minces nanocompositesPhotocatalysisDioxyde de titane[CHIM.OTHE]Chemical Sciences/OtherNanoparticules d'orNanocomposite thin films
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Hydrogen and Deuterium Incorporation in ZnO Films Grown by Atomic Layer Deposition

2021

Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water. In addition to depositions with normal water, heavy water (2H2O) was used in order to study the reaction mechanisms and the hydrogen incorporation at different deposition temperatures from 30 to 200 °C. The total hydrogen concentration in the films was found to increase as the deposition temperature decreased. When the deposition temperature decreased close to room temperature, the main source of impurity in hydrogen changed from 1H to 2H. A sufficiently long purging time changed the main hydrogen isotope incorporated in the film back to 1H. A multiple short pulse scheme was used to study th…

ToF-ERDAMaterials scienceHydrogenAnalytical chemistrychemistry.chemical_elementZincAtomic layer depositionchemistry.chemical_compoundImpuritysinkkioksidiMaterials ChemistryThin filmDeposition (law)Heavy waterdiethylzincSurfaces and InterfacesatomikerroskasvatusEngineering (General). Civil engineering (General)heavy waterSurfaces Coatings and FilmschemistryDeuteriumALDvetyZnOTA1-2040ohutkalvot
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Depth profiling of Al2O3 + TiO2 nanolaminates by means of a time-of-flight energy spectrometer

2011

Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions…

ToF-ERDANuclear and High Energy Physicsdepth profilingMaterials scienceSpectrometerta114business.industryAnalytical chemistryERDIonTotal thicknessElastic recoil detectionTime of flightAtomic layer depositionnanolaminateAl2O3 and TiO2ALDOptoelectronicsThin filmbusinessInstrumentationEnergy (signal processing)
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EFFECTS OF THE MULTIPLE INTERNAL REFLECTION AND SAMPLE THICKNESS CHANGES ON DETERMINATION OF ELECTRO-OPTIC COEFFICIENT VALUES OF A POLYMER FILM

2012

New nonlinear optical (NLO) active organic materials are appealing candidates for optoelectronic and photonic technologies. For the evaluation of new NLO polymer materials for applicability in the mentioned technologies, the most important criteria are their electro-optic (EO) coefficients. We have implemented the Mach–Zehnder interferometric (MZI) method for the determination of EO coefficients of thin organic films. Despite the fact that other multiple optical methods for the determination of thin film EO coefficients are known, the MZI method has been chosen because this particular technique has high sensitivity to phase and intensity modulations in the sample arm of an interferometer an…

Total internal reflectionLight intensityInterferometryMaterials scienceOpticsElectrostrictionbusiness.industryPhase (waves)General Physics and AstronomyPhotonicsThin filmbusinessSignal
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Synchrotron Mössbauer Reflectometry in Materials Science

1999

57Fe nuclear resonant scattering experiments are reported on iron-containing thin films using 14.41 keV synchrotron radiation at angles of grazing incidence around and slightly above the critical angle of the electronic total reflection. In partially oxidised α–Fe films of 20 nm original thickness various oxide and oxihydroxide phases are identified at different depth. In a [Fe/FeSi]10multilayer grown on Zerodur®substrate the Fe—Fe interlayer coupling varies with the distance from the substrate. The antiferromagnetic order of the top layers of this multilayer can be suppressed by external magnetic field. These examples demonstrate the efficiency of synchrotron Mossbauer reflectometry (SMR),…

Total internal reflectionMaterials scienceCondensed matter physicslawMössbauer spectroscopySynchrotron radiationSubstrate (electronics)Thin filmReflectometryHyperfine structureSynchrotronlaw.invention
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