0000000000161512
AUTHOR
M.d. Cubells-beltran
Modeling of Magnetoresistive-Based Electrical Current Sensors: A Technological Approach
The utilization of modeling tools can, in many cases, help us in the design and final prototyping of any sort of sensors. In this paper, we describe a finite-element method (FEM) model applied to a hybrid technology involving a full Wheatstone bridge spin-valve-based electrical current sensor. After validating the model against experimental results, we focus our studies on geometrical aspects of the sensor configuration, in order to detect possible deviations that may have occurred during the fabrication process. In this regard, the characteristics of the behavior of the sensor depending on lateral displacements and inclination are included. Moreover, the frequency response of the sensor is…
Circuit simulators for circuit analysis in graduate engineering courses
Circuit simulators are extensively used as an aid in many courses at the graduate level in many different engineering and applied sciences programs. SPICE (Simulation Program with Integrated Circuits Emphasis) based software programs have been used for long due to their traditional market position. If we focus on circuits analysis and linear systems subjects, the features that are required from a given simulator can be found in student/limited versions of commercial EDA (Electronic Design Automation) suites or in freeware/open source codes. In this contribution, we analyse and compare the most revelant characteristics of a representative set of the software packages that are commonly adopte…
A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation
An advanced model for quasi-linear spin-valve (SV) structures is presented for circuit simulation purposes. The model takes into account electrical and thermal effects in a coupled way in order to allow a coherent representation of the sensor physics for design purposes of electronics applications based on these sensor devices. The model was implemented in Verilog-A and used in a commercial circuit simulator. For testing the model, different SV structures have been specifically fabricated and measured. The characterization included DC measurements as well as steady-state and transient thermal analysis. From the experimental data, the parameters of the model have been extracted. The model re…
Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level
An analytical compact model for giant magnetoresistance (GMR) based current sensors has been developed. Different spin-valve based full Wheatstone bridge sensors, with the current straps integrated in the chip, have been considered. These devices have been experimentally characterized in order to extract the model parameters. In this respect, we have focused on the sensors linear operation regime. The model, which allows the individual description of the magnetoresistive elements, has been implemented in a circuit simulator by means of a behavioral description language: Verilog-A. We also propose the use of the devices in a direct power measurement application at the integrated circuit (IC)…
Integration of GMR sensors with different technologies
Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the …
Current-Based Measurement Technique for High Sensitivity Detection of Resistive Bridges With External Balancing Through Control Voltages
We present a novel approach based on differential measurements of dc currents with very high sensitivity suitable for the detection of very small variations of resistors in Wheatstone full-bridge configurations. External control voltages allow for the compensation of the bridge unbalancing avoiding the need of changing its elements so making the solution suitable for integrated sensor systems. The proposed current-based measurement technique has been implemented through three different circuits, in transimpedance configuration and without the use of any further amplification stage, employing only two active blocks that allow for a very high integration level. The main characteristics of the…
Quasi‐digital front‐ends for current measurement in integrated circuits with giant magnetoresistance technology
In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I-f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level si…
Monolithic integration of GMR sensors for standard CMOS-IC current sensing
Abstract In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a de…
Sub-mA current measurement by means of GMR sensors and state of the art lock-in amplifiers
Electric current measurement at the range of μA in integrated circuit has been traditionally carried out by micro-electronically engineered systems, such as current mirrors or charging capacitors. However, off-line, i.e., non-intrusive methods provide advantages related to size and power consumption. In this sense, giant magnetoresistance (GMR) magnetic sensors are optimal due to their sensitivity and CMOS compatibility. In this work, we make use of specifically designed CMOS GMR-based current sensors in combination with a custom electronic interface based on a low-voltage low-power lock-in amplifier, demonstrating the capability of this combination for current measurement in the range of μ…
Electrical Modeling of Monolithically Integrated GMR Based Current Sensors
We report on the electrical compact model, using Verilog-A, of a monolithically integrated giant magnetoresistance (GMR) based electrical current sensors. For this purpose, a specifically designed ASIC (AMS $0.35\mu \mathrm{m}$ technology) has been considered, onto which such sensors have been patterned and fabricated, following a two-steps procedure. This work is focused on the DC regime model extraction, giving evidences of its good performance and stating the bases for subsequent model improvements.
Giant Magnetoresistance (GMR) Magnetometers
Since its discovering in 1988, the Giant Magnetoresistance (GMR) effect has been widely studied both from the theoretical and the applications points of view. Its rapid development was initially promoted by their extensive use in the read heads of the massive data magnetic storage systems, in the digital world. Since then, novel proposals as basic solid state magnetic sensors have been continuously appearing. Due to their high sensitivity, small size and compatibility with standard CMOS technologies, they have become the preferred choice in scenarios traditionally occupied by Hall sensors. In this chapter, we analyze the main properties of GMR sensors regarding their use as magnetometers. W…
GMR Based Sensors for IC Current Monitoring
The Giant MagnetoResistance (GMR) effect is a magnetic coupling mechanism that can be obtained in multilayer structures of few nanometers thick. In these devices, and at room temperature, the resistance is a function of the external magnetic field, at optimal levels for being used as sensors. Since the GMR effect was reported, scientists and engineers have dedicated their effort to this topic. This way, after two decades, a a very good knowledge of the GMR underlying physics together with notable designs of GMR based devices are nowadays available. They were initially used in the read heads of hard drives, but the constant evolution that this technology has experienced has open new fields o…