0000000000360709
AUTHOR
J. Jansons
Crossluminescence in some fluoride and chloride crystals with intrinsic and extrinsic defects
Abstract The term “crossluminescence” (CRL) was originaly proposed for emission due to electronic transitions from valence band states to cation core band states. Analogous transitions involving cation core states are observed at defect centers.
Cathodoluminescence of oxyfluoride glass-ceramics
Abstract Tb, Ce, Eu activated oxyfluoride glass-ceramics with the composition SiO2 · Al2O3 · Li2O · LaF3 have been studied by cathodoluminescence (CL). We compared CL intensities and decay times of the Tb, Ce, Eu activated glass-ceramic samples and observed that the Tb activated sample has the most intense luminescence, but the Ce activated sample has the shortest decay times. Induced optical absorption and thermostimulated luminescence have been observed after X-ray irradiation of samples.
Silicon dioxide thin film luminescence in comparison with bulk silica
Abstract The luminescence of the self-trapped exciton (STE) in SiO2 films was measured at low temperatures on the background of defect luminescence under cathodoexcitation and compared with bulk silica luminescence. The defect luminescence is mainly caused by non-bridging oxygen centers (a red luminescence band at 1.8 eV) and twofold coordinated silicon centers (blue and ultraviolet luminescence with 2.7 and 4.4 eV bands, respectively). The STE luminescence with a band at 2.3 eV is uniformly distributed within SiO2 film volume. Contrary to defect luminescence, whose intensity increases with irradiation time, the STE luminescence decreases almost to zero in a few seconds of irradiation time.…
Creep and damage accumulation in orthotropic composites under cyclic loading
Experimental results and theoretical prediction of the response of glassfiber-reinforced polyester under quasi-static, static (creep), and cyclic (fatigue) loading are presented. The nonlinear strain component at static loading and the strain amplitude rate at cyclic off-axis loading of an orthotropic composite are shown to follow the associated flow rule with a single-parameter quadratic potential function. The influence of fatigue damage on deformation is considerable due to the reduction in the elastic modulus of the composite and is apparently negligible with respect to its effect on the parameters of the creep kernel.
Efficient generation of energetic ions in multi-ion plasmas by radio-frequency heating
We describe a new technique for the efficient generation of high-energy ions with electromagnetic ion cyclotron waves in multi-ion plasmas. The discussed ‘three-ion’ scenarios are especially suited for strong wave absorption by a very low number of resonant ions. To observe this effect, the plasma composition has to be properly adjusted, as prescribed by theory. We demonstrate the potential of the method on the world-largest plasma magnetic confinement device, JET (Joint European Torus, Culham, UK), and the high-magnetic-field tokamak Alcator C-Mod (Cambridge, USA). The obtained results demonstrate efficient acceleration of 3He ions to high energies in dedicated hydrogen–deuterium mixtures.…
Electrodeless HF-lamps as UV and VUV light sources
The paper is devoted to problems of employment of high- frequency electrodeless lamps as ultra violet (UV) and vacuum ultra violet (VUV) light sources. Some aspects of lamp preparation technology for UV and VUV are considered. The technology, developed in our laboratory, allows to prepare HFEL-s filled with wide spread of chemical elements. Our experience shows that most important filling elements for UV and VUV spectral regions are Zn, Cd, Hg, Se, As, Sn and Pb, Sb, Bi, Tl, Te, I, H, Hg-Cd, Hg-Zn, Se-Te. The requirements for generators are discussed. Some important spectral characteristics of lamp examples are presented.
Luminescence and electron transport properties of GaN and AlN layers
Abstract The transport properties of free charge carriers, photo- and cathodo-luminescence (CV) in GaN and AlN films obtained by MOCVD technique on sapphire and Si substrates, are investigated. The concentration of free charge carriers in GaN is of order 10 17 – 10 19 cm −3 whereas AlN thin films are insulating. The Hall mobility of electrons are 80– 140 cm 2 / V s ). In undoped GaN films the spectral composition of CL is close to photoluminescence (PL) when excited in the region of band–band transitions. The decay time constant of the 3.44 eV UV emission attributed to the bound exciton is considerably less than 1 ns , whereas the 3.26 eV violet (VI) band shows a slow hyperbolical decay ove…
Rare Earth Activated Oxyfluoride Glasses and Glass-Ceramics for Scintillation Applications
Oxyfluoride glasses 49SiO2·6Al2O3·24Li2O·20LaF3 activated with Tb, Ce, Eu have been synthesized and studied. After heating at 580°C and 750°C crystalline phases were obtained. The samples were studied by DTA (Differential thermal analyzer), CL (cathodoluminescence), XRD (X-ray diffraction), SEM (scanning electron microscope), EDS (energy dispersive x-ray spectroscopy) methods. We found out that presence of crystalline phase enhances the CL of Tb activated samples significantly; whereas, the shortest decay time of 0.29 μs has been observed for less intense Ce doped glass sample.
Novel method for determination of tritium depth profiles in metallic samples
Tritium accumulation in fusion reactor materials is considered a serious radiological issue, therefore a lot of effort has been concentrated on the development of radiometric techniques. A novel method, based on gradual dissolution, for the determination of the total tritium content and its depth profiles in metallic samples is demonstrated. This method allows for the measurement of tritium in metallic samples after their exposure to a hydrogen and tritium mixture, tritium containing plasma or after irradiation with neutrons resulting in tritium formation. In this method, successive layers of metal are removed using an appropriate etching agent in the controlled regime and the amount of evo…
Ultraviolet luminescence of ScPO4, AlPO4 and GaPO4 crystals.
The luminescence of self-trapped excitons (STEs) was previously observed and described for the case of tetragonal-symmetry ScPO4 single crystals. The subject band in this material is situated in the UV spectral range of ?210?nm or ?5.8?eV. In the present work, we are both expanding this earlier luminescence study and seeking to identify similar luminescence phenomena in other orthophosphate crystals, i.e., AlPO4 and GaPO4. These efforts have proven to be successful?in spite of the structural differences between these materials and ScPO4. Specifically we have found that for AlPO4 and GaPO4, in addition to an ?-quartz-like STE, there is a UV luminescence band that is similar in position and d…
Luminescence of coesite
Coesite is a polymorph modification of crystalline silicon dioxide with a tetrahedral structure. The luminescence of a single crystal of synthetic coesite was studied under excitation using x-rays, an electron beam, and excimer lasers KrF (248 nm), ArF (193 nm) and F2 (157 nm). Luminescence bands in the regions of 2.5 eV and 4.4 eV appear. The blue band is dependent on temperature and is composed of decay kinetics. Three main decay times are revealed, exhibiting luminescence of a different nature in the same range of the spectrum. One is in the ns range of time with a time constant of about 2 ns. The two other decay times are in the regions of 5 μs and 700 μs. The 5 μs component is also see…
host‐defect luminescence of stishovite
a detailed study of the 4.75 eV luminescence band of stishovite single crystal (SiO2 with rutile structure) is reported. Kinetics of luminescence intensity is studied at durable (tens of minutes) X-ray excitation. The observed behaviour of the band intensity is explained by creation and destruction of luminescence centres depending on temperature both being determined by radiation stimulated diffusion of atomic particles. The luminescence decay is observed to last for minutes after X-ray irradiation while only for ns and hundreds of µs under pulsed e-beam irradiation suggesting a complicated recombination of the created defects. The UV band of stishovite is compared with the 4.9 eV luminesc…
Luminescence of fluorine doped silica glass
Abstract The role of fluorine doping on silica properties was studied by luminescence methods. Non-doped samples of the same preparation technology possess an absorption band at 7.6 eV on the level of 2 cm−1. A trace of this band in the fluorine-doped sample is on the level of 0.1 cm−1. In both samples 7.6 eV photons as well as ionizing irradiation (X-ray, electron beam) excite photoluminescence of so-called oxygen deficient centers with a blue (2.7 eV) and a UV band (4.4 eV). The luminescence of the fluorine doped sample increases with dose many times from the initial low level for the same excitation. Also, thermally stimulated luminescence appears after irradiation. The energetic yield u…
Luminescence of intrinsic defects in YAG polycrystalline powder
In the present work we have investigated luminescence properties of the fine, well-crystallized undoped YAG polycrystalline powders and thermochemically treated YAG polycrystalline powders. Presented work give evidence of significant role of 'antisite' defects (AD), i.e., where some portion of one type of cations (Y 3+ ) occupy another cations (Al 3+ Oh ) sites and vice versa in YAG structure, on the creation and structure of luminescence centers in complex multi-component oxides.
Comparison of the structure of the plasma-facing surface and tritium accumulation in beryllium tiles from JET ILW campaigns 2011-2012 and 2013-2014
In this study, beryllium tiles from Joint European Torus (JET) vacuum vessel wall were analysed and compared regarding their position in the vacuum vessel and differences in the exploitation conditions during two campaigns of ITER-Like-Wall (ILW) in 2011-2012 (ILW1) and 2013-2014 (ILW2) Tritium content in beryllium samples were assessed. Two methods were used to measure tritium content in the samples - dissolution under controlled conditions and tritium thermal desorption. Prior to desorption and dissolution experiments, scanning electron microscopy and energy dispersive x-ray spectroscopy were used to study structure and chemical composition of plasma-facing-surfaces of the beryllium sampl…
Structure and luminescence of GaN layers
Abstract GaN films grown on 〈1 1 1〉 Si substrate by means of low pressure MOCVD technique in a horizontal flow quartz reactor are characterized by different thin layer analysis methods. The polycrystalline hexagonal structure of the GaN layers has been checked by means of grazing incidence X-ray diffractometry and IR spectroscopy. Cathodoluminescence (CL) spectra and their time kinetics are studied. The mean decay time of the 3.44 eV UV bound exciton transition is below 1 ns, whereas the 3.26 eV violet band shows a slow hyperbolical decay over about 1 μs. A third yellow band appears at 2.12 eV due to transitions via localized states.
<title>Iodine and mercury resonance lamps and their spectrum in far UV</title>
Electrodeless iodine, mercury iodide, and mercury radio- frequency discharge lamps have been made to provide effective sources of atomic spectra for analytical spectroscopy providing powerful resonance radiation of iodine and mercury in the 120-253 nm region. The lamps are required and can be used for spectral calibration, resonance absorption, and fluorescence detection techniques, for investigation of atomic characteristics (e.g., branching ratios) and other purposes where intense monochromatic spectra are needed. Production technology, development, and investigation of the UV and VUV emission are described.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downlo…
Luminescence of different modifications of crystalline silicon dioxide: Stishovite and coesite
Abstract Luminescence of very small samples of single crystals of coesite and stishovite has been studied. The spectra were detected under ionizing radiation (X-ray and electron beam) and the decay kinetics of cathodoluminescence in the range of time from 10 ns to 3 ms was measured. The coesite luminescence possesses a broad band at 3 eV with exponential decay about 680 μs at 80 K. The nature of this luminescence was explained as a self-trapped exciton creation in tetrahedron framework. The stishovite luminescence possesses two bands—blue (2.8 eV) and UV (4.7 eV). The UV band intensity grows more than 20 times with irradiation dose from initial level. This shows that the corresponding lumin…
Luminescence of GeO2 glass, rutile-like and α-quartz-like crystals
Abstract The luminescence of GeO 2 rutile-like crystals was studied. Crystals were grown from a melt of germanium dioxide and sodium bicarbonate mixture. Luminescence of the crystal was compared with that of sodium germanate glasses produced in reduced and oxidized conditions. A luminescence band at 2.3 eV was observed under N 2 laser (337 nm). At higher excitation photon energies and X-ray excitation an additional band at 3 eV appears in luminescence. The band at 2.3 eV possesses intra-center decay time constant about 100 μs at 290 K and about 200 μs at low temperature. Analogous luminescence was obtained in reduced sodium germanate glasses. No luminescence was observed in oxidized glasses…
Luminescence of phosphorus containing oxide materials: Crystalline SiO2‐P and 3P2O5⋅7SiO2; CaO⋅P2O5; SrO⋅P2O5 glasses
Luminescence of phosphate glasses such as CaO⋅P2O5 and SrO⋅P2O5 is compared with that of phosphorus doped crystalline α-quartz and phosphosilicate glass with content 3P2O5⋅7SiO2. Water & OH groups are found by IR spectra in these materials. The spectrum of luminescence contains many bands in the range 1.5 - 5.5 eV. The luminescence bands in UV range at 4.5-5 eV are similar in those materials. Decay duration in exponential approximation manifests a time constant about 37 ns. Also a component in μs range was detected. PL band of μs component is shifted to low energy with respect to that of ∼37 ns component. This shift is about 0.6 eV. It is explained as singlet-triplet splitting of excited st…
Overview of the JET results in support to ITER
The 2014–2016 JET results are reviewed in the light of their significance for optimising the ITER research plan for the active and non-active operation. More than 60 h of plasma operation with ITER first wall materials successfully took place since its installation in 2011. New multi-machine scaling of the type I-ELM divertor energy flux density to ITER is supported by first principle modelling. ITER relevant disruption experiments and first principle modelling are reported with a set of three disruption mitigation valves mimicking the ITER setup. Insights of the L–H power threshold in Deuterium and Hydrogen are given, stressing the importance of the magnetic configurations and the recent m…
Creep of polymer concrete in the nonlinear region
Two polyester-based polymer concretes with various volume content of diabase as an extender and aggregate are tested in creep under compression at different stress levels. The phenomenological and structural approaches are both used to analyze the experimental data. Common features of changes in the instantaneous and creep compliances are clarified, and a phenomenological creep model which accounts for the changes in the instantaneous compliance and in the retardation spectrum depending on the stress level is developed. It is shown that the model can be used to describe the experimental results of stress relaxation and creep under repeated loading. Modeling of the composite structure and su…
UV and yellow luminescence in phosphorus doped crystalline and glassy silicon dioxide
Abstract Luminescence of phosphorus doped crystalline α-quartz and phosphosilicate glass with content 3P2O5·7SiO2 was studied. Water and OH groups are found by IR spectra in these materials. The spectrum of luminescence contains many bands in the range 1.5–5.5 eV. The luminescence bands in UV range at 4.5–5 eV are similar in those materials. Decay duration in exponential approximation manifests a time constant about 37 ns. Also a component in µs range was detected. PL band of µs component is shifted to low energy with respect to that of ~37 ns component. This shift is about 0.6 eV. It is explained as singlet–triplet splitting of excited state. Below 14 K increase of luminescence kinetics du…
UV cathodoluminescence of crystalline α-quartz at low temperatures
Two luminescence bands in the UV range were detected in crystalline a-quartzunder electron beam excitation (6 kV, 3–5mA). One band is situated at 5 eV and could be observed in pure samples. Its intensity increases with cooling below 100 K and undergoes saturation below 40 K alongside a slow growth with the time of irradiation at 9 K. The decay curve of the band at 5 eV contains two components, a fast (o10 ns) and a slow one in the range of 200ms. The photoluminescence band at 5 eV with a similar temperature dependence was found in previously neutron-irradiated crystalline a-quartz. Therefore, the band at 5 eV was attributed to host material defects in both irradiation cases. The creation me…
Luminescence of silica glass containing aluminum oxide
Abstract Optical properties of silica glass with different doping of Al 2 O 3 up to 1.5 mol% were studied. Alumina stimulates creation of a luminescence centers with specific band at 3.3 eV. A new band at 8.2 eV appears in luminescence excitation spectra. There is transport of energy to other luminescence centers associated with an impurity (Ag, Ce) at this energy. Alumina stimulates creation of E′ centers under γ-irradiation beside trapped hole on AlO 4 tetrahedron as well as creation of a silicon related oxygen deficient center (SiODC) under cathodoexcitation. Visually, the samples look inhomogeneous even after γ-irradiation. The explanation could be heterogeneity of the samples. Alumina …
Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers
Abstract Cathodoluminescence spectral shapes and respective band decay times show no similarity between luminescence centers in different crystal and amorphous modifications of SiO2 and GeO2. On the other hand, the additionally produced red luminescence centers (650 nm) by oxygen implantation into SiO2 layers are of the same nature as in stoichiometric SiO2 and are attributed to the non-bridging oxygen hole center (NBOHC). On the other hand, the elevated blue luminescence (460 nm) in Si implanted SiO2 belongs to the silicon related oxygen deficient center (SiODC) as in stoichiometric layers also. Ge implantation into SiO2 and thermal post-annealing leads to a huge violet luminescence (400 n…
Rare earth doped glass–ceramics containing NaLaF4 nanocrystals
Abstract Oxyfluoride glasses 16Na 2 O–9NaF–5LaF 3 –7Al 2 O 3 –63SiO 2 (mol%) activated with 3% terbium, dysprosium, praseodymium and neodymium fluorides have been prepared and studied by differential thermal analysis, cathodoluminescence, X-ray induced luminescence, X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. We found out that the presence of crystalline phase enhances the X-ray induced luminescence intensity. X-ray induced luminescence is the most intense for the sample activated with terbium and treated at 700 °C, whereas the praseodymium and neodymium activated samples have the fastest decay times.
Luminescence of polymorphous SiO2
Abstract The luminescence of self-trapped exciton (STE) was found and systematically studied in tetrahedron structured silica crystals (α-quartz, coesite, cristobalite) and glass. In octahedron structured stishovite only host material defect luminescence was observed. It strongly resembles luminescence of oxygen deficient silica glass and γ or neutron irradiated α-quartz. The energetic yield of STE luminescence for α-quartz and coesite is about 20% of absorbed energy and about 5(7)% for cristobalite. Two types of STE were found in α-quartz. Two overlapping bands of STEs are located at 2.5–2.7 eV. The model of STE is proposed as Si–O bond rupture, relaxation of created non-bridging oxygen (N…
Modelling of JET hybrid plasmas with emphasis on performance of combined ICRF and NBI heating
International audience; During the 2015--2016 JET campaigns, many efforts have been devoted to the exploration of high-performance plasma scenarios envisaged for DT operation in JET. In this paper, we review various key recent hybrid discharges and model the combined ICRF NBI heating. These deuterium discharges with deuterium beams had the ICRF antenna frequency tuned to match the cyclotron frequency of minority H at the centre of the tokamak coinciding with the second harmonic cyclotron resonance of D. The modelling takes into account the synergy between ICRF and NBI heating through the second harmonic cyclotron resonance of D beam ions, allowing us to assess its impact on the neutron rate…