0000000000590443
AUTHOR
Cristiano Calligaro
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with -rays, X-rays, Protons and Heavy Ions
The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under &gamma
Fogging effect correction of Gafchromic HD-V2 film response for its use in high-dose radiotherapy
GAFChromic® HD-V2 film is a reliable dose measurement device, thin, flexible, inexpensive, simple to use and easy to analyze. The response in terms of net absorbance with respect to absorbed dose was found to be linear in a large dose range, which supports the feasibility of using the film dosimeters in many applications, such as radiotherapy. For its use, a "fogging" effect must be take into account since film response changes with time. To determine a calibration curve valid for any time, fogging effect was investigated for more than 400 days. A correction procedure allows the use of HD-V2 film dosimeters in high-dose radiotheraphy, as brachytherapy, and quality assurance (QA) procedures.
The methodology for active testing of electronic devices under the radiations
The methodology, developed for active testing of electronic devices under the radiations, is presented. The test set-up includes a gamma-ray facility, the hardware board/fixtures and the software tools purposely designed and realized. The methodology is so wide-ranging to allow us the verification of different classes of electronic devices, even if only application examples for static random access memory modules are reported.