0000000001171929

AUTHOR

G. Cannella

showing 12 related works from this author

Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction

2011

We characterize SnO(2):F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for vertical bar V vertical bar< 0:1 V and have a super-linear behavior (power law) for vertical bar V vertical bar < 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the …

Materials scienceTunnel junctionAnalytical chemistryGeneral Physics and AstronomyHeterojunctionSeries and parallel circuitsOhmic contactMolecular physicsPower lawCapacitancefluorinated tin oxide amorphous silicon tunnel-junction C-V profiling modeling.Quantum tunnellingDiode
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Radiation effects in nitride read-only memories

2010

Abstract We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remai…

Radiation effectDEVICERadiationNitrideNONVOLATILE MEMORYmemorieX-raygamma-rayIrradiationElectrical and Electronic EngineeringSafety Risk Reliability and QualityNROMHEAVY-ION EXPOSURELeakage (electronics)business.industryChemistrySubthreshold conductionElectrical engineeringX-rayCondensed Matter PhysicsRadiation effectlight ionsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsThreshold voltageCELLSOptoelectronicsbusinessMicroelectronics Reliability
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Plasmonic modes in molybdenum ultra-thin films suitable for hydrogenated amorphous silicon thin film solar cells

2014

We have recently demonstrated that molybdenum ultra-thin films interposed between hydrogenated amorphous silicon (a-Si:H) and SnO2:F transparent conductive oxide (TCO) in thin film solar cells show light trapping effects which enhance the solar cells performances. The effect of this improvement may be attributed to surface plasmon polariton (SPP) modes excited at the molybdenum interface by the solar radiation. In this paper we show direct evidence of such SPP modes in the case of the molybdenum/air interface by using the attenuated total reflection (ATR) technique, pioneered by Kretschmann, and we evaluate the dielectric constant of molybdenum at 660 nm. (C) 2013 The Authors. Published by …

Amorphous siliconMaterials sciencebusiness.industrychemistry.chemical_elementThin Film PhotovoltaicsThin Film PhotovoltaicPlasmonicSurface plasmon polaritonThin Film Photovoltaics;Light Trapping; Plasmonics;Hydrogenated Amorphous Siliconchemistry.chemical_compoundHydrogenated Amorphous SiliconEnergy(all)chemistryMolybdenumAttenuated total reflectionOptoelectronicsPlasmonicsPlasmonic solar cellThin filmbusinessPlasmonLight TrappingTransparent conducting film
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The Analysis of teachinpractices at school and at university

2011

It is well-known that teachers are required to have an experimental mentality leading them to constantly verify the educational efficiency of their teaching actions and make new hypotheses to improve. Actually, what really happens at school is that intuition is predominant because of the lack of time, so these hypotheses are quite dim, working procedures are the fruit of almost indefinite improvisation, and assessment does not fit the need for observing the benefits and results of learning or it is not even carried out at all. Therefore, it is required for school teachers to have a strong methodological competence in the field of teaching research. The Research Group at the University of Pa…

universityschoolanalysis of teaching practiceSettore M-PED/03 - Didattica E Pedagogia Speciale
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Electrical characterization of deoxyribonucleic acid hybridization in metal-oxide-semiconductor-like structures

2012

In this work, metal-oxide-semiconductor (MOS)-like sensors in which deoxyribonucleic acid (DNA) strands are covalently immobilized either on Si oxide or on a gold surface were electrically characterized. Si oxide fabrication process allowed us to have a surface insensitive to the solution pH. A significant shift in the flat band voltage was measured after single strand DNA immobilization (+0.47 +/- 0.04 V) and after the complementary strand binding (+0.07 +/- 0.02 V). The results show that DNA sensing can be performed using a MOS structure which can be easily integrated in a more complex design, thus avoiding the problems related to the integration of micro-electrochemical cells.

FabricationMaterials scienceComplementary strandPhysics and Astronomy (miscellaneous)OxideNanotechnologyElectrical characterizationSettore ING-INF/01 - ElettronicaComplex designSIO2 SURFACESMetalSi oxidechemistry.chemical_compoundCAPACITORSComplementary DNASolution pHFlat-band voltageMicro-electrochemical cellFIELD-EFFECT DEVICESMolecular biophysicsMetal oxide semiconductorDNAGold surfaceMOS structureIMMOBILIZATIONChemical engineeringchemistryFabrication proceCovalent bondvisual_artvisual_art.visual_art_mediumSingle strand DNABiosensorDNADNA sensing
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Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells

2012

We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions, improvements of ≈10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface.

Amorphous siliconMaterials sciencePhysics and Astronomy (miscellaneous)Siliconbusiness.industrySurface plasmonchemistry.chemical_elementhydrogenated amorphous silicon (a-Si:H) solar cellsSubstrate (electronics)Amorphous solidchemistry.chemical_compoundchemistrysurface plasmon polaritonOptoelectronicsbusinessShort circuitPlasmonTransparent conducting film
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Impact of transparent conductive oxide on the admittance of thin film solar cells

2010

Abstract The impact of transparent electrically conducting oxide (TCO) on the admittance measurements of thin film p–i–n a-Si:H solar cells was investigated. Admittance measurements on solar cell devices, with different area and geometry, in a wide range of frequencies and biases were performed. The admittance measurements of the investigated solar cells, which use the TCO as an electrical contact, showed that the high frequency admittance per area unit depends on the area. This effect increases both with the probe frequency and the size of the solar cells. Transmission line model valid for strip geometry which explains how the resistivity of the TCO layer impacts the measured admittance of…

Theory of solar cellsMaterials scienceAdmittanceintegumentary systemEquivalent series resistancebusiness.industryCondensed Matter PhysicsCapacitanceElectronic Optical and Magnetic Materialslaw.inventionTransparent conductive oxide (TCO)Admittance CV measurementTransmission linesThin film solar cellsa-Si:H Series resistanceOpticslawParasitic elementSolar cellMaterials ChemistryElectrical and Electronic EngineeringThin filmbusinessTransparent conducting filmSolid-State Electronics
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Capacitance study of thin film SnO2:F/p-type a-Si:H heterojunctions

2011

Abstract We characterized SnO 2 :F/p-type a-Si:H heterojunctions by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature to determine the junction parameters. Samples with circular geometry and different diameters were characterized. The current scales with the junction area, and the current density J as a function of the voltage V is a slightly asymmetric curve with a super-linear behaviour (cubic law) for high voltages. Using a transmission line model valid for devices with circular geometry, we studied the effects of the SnO 2 :F resistivity on the measured capacitance when the SnO2:F layer works as an electrical contact. The measured C-V curve allows us t…

Materials scienceCondensed matter physicsheterojunctionDopingcapacitanceAnalytical chemistryHeterojunctionamorphous siliconCapacitanceElectrical contactsSettore FIS/03 - Fisica Della MateriaEnergy(all)TCOElectrical resistivity and conductivityThin filmCurrent densityVoltageSnO2:F
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Preliminary radiation hardness tests of single photon Si detectors

2010

Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…

Physicsbusiness.industryOptical powerSilicon Photomultiplier single photon avalanche diode dark count gain light ion irradiation X-rays irradiationSilicon photomultiplierOpticsSingle-photon avalanche diodeRadiation damageOptoelectronicsBreakdown voltageIrradiationbusinessRadiation hardeningDark current
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Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells

2011

We have investigated the role of the metal-semiconductor back contact on the performances of thin film modules consisting of single junction a-Si:H photovoltaic (PV) cells deposited with p-i-n configuration. We find that an adequate choice of the back contact helps reducing the barrier height of the junction improving the contact conductivity. For this purpose Mo has shown to be effective. Moreover we find that Mo, as refractory material, has additional beneficial effects reducing the formation of defects leading to the decrease of recombination losses. We have then fabricated a PV module on flexible substrate for indoor energy harvesting applications using Mo as back contact. An efficiency…

Materials scienceThin-film solar cells hydrogenated amorphous silicon (a-Si:H)transparent conductive oxidebusiness.industryOptoelectronicsThin film solar cellbusinessMetal semiconductorTransparent conducting film
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The analysis of teaching practices at school and at university.

2011

It is well-known that teachers are required to have an experimental mentality leading them to constantly verify the educational efficiency of their teaching actions and make new hypotheses to improve. Actually, what really happens at school is that intuition is predominant because of the lack of time, so these hypotheses are quite dim, working procedures are the fruit of almost indefinite improvisation, and assessment does not fit the need for observing the benefits and results of learning or it is not even carried out at all. Therefore, it is required for school teachers to have a strong methodological competence in the field of teaching research. The Research Group at the University of Pa…

orientation didactics in secondary schoolgender differencemedia educationlearning innovationpersonalized didacticAnalysis of teaching practiceSettore M-PED/03 - Didattica E Pedagogia Speciale
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Comparison between textured SnO2:F and Mo contacts with the p-type layer in p–i–n hydrogenate amorphous silicon solar cells by forward bias impedance…

2013

Abstract In this paper we compare the performance of the textured SnO2:F and Mo contacts with the p-type layer in p–i–n hydrogenate amorphous silicon (a-Si:H) solar cells. We use standard current–voltage (I–V) electrical characterization methods coupled with forward bias small signal impedance analysis. We show the efficacy of this technique to determine the effective carrier lifetime in photovoltaic cells. We show that such effective lifetimes are indeed directly connected to the respective dark diode saturation currents. We also find that the effective lifetime is constant with the temperature in the 0–70 °C range and it is significantly better for the solar cell with Mo diode contact. Th…

Amorphous siliconMaterials scienceRenewable Energy Sustainability and the EnvironmentOpen-circuit voltagebusiness.industryPhotovoltaic systemImpedance measurementCarrier lifetimelaw.inventionEffective carrier lifetimea-Si:H p–i–n solar cellchemistry.chemical_compoundchemistrylawSolar cellOptoelectronicsGeneral Materials SciencebusinessElectrical impedanceSaturation (magnetic)DiodeSolar Energy
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