0000000001238965

AUTHOR

Alessandro Tomasino

showing 41 related works from this author

Solid-state-biased coherent detection of ultra-broadband terahertz pulses

2017

Significant progress in nonlinear and ultrafast optics has recently opened new and exciting opportunities for terahertz (THz) science and technology, which require the development of reliable THz sources, detectors, and supporting devices. In this work, we demonstrate the first solid-state technique for the coherent detection of ultra-broadband THz pulses (0.1-10 THz), relying on the electric-field-induced second-harmonic generation in a thin layer of ultraviolet fused silica. The proposed CMOS-compatible devices, which can be realized with standard microfabrication techniques, allow us to perform ultra-broadband detection with a high dynamic range by employing probe laser powers and bias v…

coherent detectionTA1501Nonlinear opticTerahertzFar infrared or terahertzFour-wave mixingUltrafast opticDevicePhysics::OpticsUltrafast laserSolid state detectorSettore ING-INF/01 - ElettronicaQC0350Optica
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Homodyne Solid-State Biased Coherent Detection of Ultra-Broadband Terahertz Pulses with Static Electric Fields.

2021

We present an innovative implementation of the solid-state-biased coherent detection (SSBCD) technique, which we have recently introduced for the reconstruction of both amplitude and phase of ultra-broadband terahertz pulses. In our previous works, the SSBCD method has been operated via a heterodyne scheme, which involves demanding square-wave voltage amplifiers, phase-locked to the THz pulse train, as well as an electronic circuit for the demodulation of the readout signal. Here, we demonstrate that the SSBCD technique can be operated via a very simple homodyne scheme, exploiting plain static bias voltages. We show that the homodyne SSBCD signal turns into a bipolar transient when the stat…

HeterodyneFour-wave mixing Solid-state device THz pulse detectionTerahertz radiationTHz pulse detectionGeneral Chemical Engineering02 engineering and technology01 natural sciencesSignalSettore ING-INF/01 - ElettronicaArticlelcsh:Chemistry010309 opticsOptics0103 physical sciencesDemodulationGeneral Materials Sciencesolid-state deviceElectronic circuitPhysicsbusiness.industryAmplifierSettore ING-INF/02 - Campi Elettromagnetici021001 nanoscience & nanotechnologyDirect-conversion receiverlcsh:QD1-999four-wave mixing0210 nano-technologybusinessVoltageNanomaterials (Basel, Switzerland)
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PPG embedded system for blood pressure monitoring

2014

In this work, we have designed and implemented a microcontroller-based embedded system for blood pressure monitoring through a PhotoPlethysmoGraphic (PPG) technique. In our system, it is possible to perform PPG measurements via reflectance mode. Hardware novelty of our system consists in the adoption of Silicon PhotoMultiplier detectors. The signal received from the photodetector is used to calculate the instantaneous heart rate and therefore the heart rate variability. The obtained results show that, by using our system, it is possible to easily extract both the PPG and the breath signal. These signals can be used to monitor the patients during the convalescence both in hospital and at hom…

Materials scienceSettore INF/01 - InformaticaPhotoPlethysmoGraphybusiness.industryDetectorPhotodetectorSettore ING-INF/02 - Campi ElettromagneticiSignalReflectivitySilicon PhotoMultiplierembedded systemMicrocontrollerSilicon photomultipliersensorEmbedded systemHeart rate variabilityBlood pressure monitoringsense organsbusinessComputer hardware2014 AEIT Annual Conference - From Research to Industry: The Need for a More Effective Technology Transfer (AEIT)
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Invited Article: Ultra-broadband terahertz coherent detection via a silicon nitride-based deep sub-wavelength metallic slit

2018

We present a novel class of CMOS-compatible devices aimed to perform the solid-state-biased coherent detection of ultrashort terahertz pulses, i.e., featuring a gap-free bandwidth at least two decades-wide. Such a structure relies on a 1-µm-wide slit aperture located between two parallel aluminum pads, embedded in a 1-µm-thick layer of silicon nitride, and deposited on a quartz substrate. We show that this device can detect ultra-broadband terahertz pulses by employing unprecedented low optical probe energies of only a few tens of nanojoules. This is due to the more than one order of magnitude higher nonlinear coefficient of silicon nitride with respect to silica, the nonlinear material emp…

lcsh:Applied optics. PhotonicsMaterials scienceComputer Networks and CommunicationsTerahertz radiationTerahertz radiationPhysics::Optics02 engineering and technology7. Clean energy01 natural scienceslaw.invention010309 opticschemistry.chemical_compoundlawSolid-state devicesElectric field0103 physical sciencesBroadbandDynamic rangebusiness.industrylcsh:TA1501-1820021001 nanoscience & nanotechnologyLaserAtomic and Molecular Physics and OpticsTerahertz detectorSilicon nitridechemistryOptoelectronics0210 nano-technologybusinessOrder of magnitudeVoltageAPL Photonics
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Backward frequency doubling of near infrared picosecond pulses.

2014

We report on backward second-harmonic generation using ps laser pulses in congruent lithium niobate with 3.2 µm periodic poling. Three resonant peaks were measured between 1530 and 1730 nm, corresponding to 16th, 17th and 18th quasi-phase-matching orders in the backward configuration, with a conversion efficiency of 4.75 x 10(-5%)/W for the 16th order. We could also discriminate the contributions from inverted domains randomized in duty-cycle.

Optical amplifierMaterials sciencebusiness.industryLithium niobateEnergy conversion efficiencyNonlinear OpticSecond-harmonic generationSettore ING-INF/02 - Campi ElettromagneticiLaserHarmonic generation and mixingSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and Opticslaw.inventionchemistry.chemical_compoundOpticschemistryPeriodic polinglawParametric ProcessePicosecondPicosecond phenomenabusinessPhase conjugationOptics express
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3084329.pdf

2017

Supplementary Materials

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Design and Fabrication of Terahertz Bragg Gratings on a Two-Wire Waveguide

In this study, we present the design and the fabrication procedure of waveguide-integrated Bragg Gratings operating at THz frequencies.

Two-Wire WaveguideTerahertzBragg GratingSettore ING-INF/01 - Elettronica
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Time‐Domain Integration of Broadband Terahertz Pulses in a Tapered Two‐Wire Waveguide

2021

In this work, the time-domain integration of broadband terahertz (THz) pulses via a tapered two-wire waveguide (TTWWG) is reported. Such a guiding structure consists of two metallic wires separated by a variable air gap that shrinks down to a subwavelength size as the movement takes from the waveguide input to its output. It is shown that while an input THz pulse propagates toward the subwavelength output gap, it is reshaped into its first-order time integral waveform. In order to prove the TTWWG time integration functionality, the THz pulse is detected directly within the output gap of the waveguide, so as to prevent the outcoupling diffraction from altering the shape of the time-integrate…

Materials scienceultrafast opticsTerahertz radiationbusiness.industrynonlinear opticsUltrafast opticsNonlinear opticsCondensed Matter PhysicsTHz radiationSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsOpticsAll-optical signal processingThz radiationBroadbandWaveguide (acoustics)Time domainTHz waveguidesbusinessLaser & Photonics Reviews
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Responsivity measurements of SiC photodiodes

2014

We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV photodiodes (henceforth, named SiC8, SiC10, SiC20) employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm respectively [1] and based on the pinch-off surface effect.

sic photodiode uv light detector Schottky
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Signal to noise ratio measurements of silicon photomultipliers in the continuous wave regime

2014

We report on our signal to noise ratio (SNR) measurements carried out, in the continuous wave regime, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate.

photomultiplier SiPM snr detectorSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronica
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Signal to noise ratio measurements of silicon photomultipliers

2014

We report on our signal to noise ratio (SNR) measurements carried out, in the continuous wave regime, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate. SiPMs are large area detectors consisting of a parallel array of Geiger Mode APDs with individual integrated quenching resistors. Each photodiode is an independent photon counting microcell and is connected to a common analog output to produce a summation signal proportional to the number of detected photons [1], [2]. SNR of SiPMs is expressed by the ratio of the SiPM average signal current and the RMS deviation of the overall current (i.e., the overall shot noise current). The …

photomultipliers silicon snr detectorSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronica
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Responsivity measurements of SiC Schottky photodiodes

2014

We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.

Settore ING-INF/02 - Campi Elettromagneticischottky photodiode uv sic detectorSettore ING-INF/01 - Elettronica
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Signal to Noise Ratio of Silicon Photomultipliers measured in the Continuous Wave Regime

2014

We performed a Signal to Noise Ratio characterization, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the overall current flowing to the device. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function …

Noise temperatureMaterials sciencePhysics::Instrumentation and Detectorsbusiness.industryphotomultipliers sipm snr detector siliconNoise spectral densityElectrical engineeringShot noiseSettore ING-INF/02 - Campi ElettromagneticiNoise figureNoise (electronics)Settore ING-INF/01 - ElettronicaSignal-to-noise ratioOpticsNoise generatorFlicker noisebusiness
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Wideband THz time domain spectroscopy based on optical rectification and electro-optic sampling

2013

We present an analytical model describing the full electromagnetic propagation in a THz time-domain spectroscopy (THz-TDS) system, from the THz pulses via Optical Rectification to the detection via Electro Optic-Sampling. While several investigations deal singularly with the many elements that constitute a THz-TDS, in our work we pay particular attention to the modelling of the time-frequency behaviour of all the stages which compose the experimental set-up. Therefore, our model considers the following main aspects: (i) pump beam focusing into the generation crystal; (ii) phase-matching inside both the generation and detection crystals; (iii) chromatic dispersion and absorption inside the c…

DiffractionTA1501Optical rectificationComputer scienceTerahertz radiationTerahertz radiationPhysics::OpticsSettore ING-INF/01 - ElettronicaArticleCrystalElectro-optic samplingOptical rectificationOpticsSampling (signal processing)Dispersion (optics)Thz time domain spectroscopyWidebandSpectroscopyAbsorption (electromagnetic radiation)Multidisciplinarybusiness.industrySettore ING-INF/02 - Campi ElettromagneticiQC0450Terahertz detectorsTerahertz sourcebusinessTelecommunicationsBeam (structure)
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Responsivity measurements of silicon carbide Schottky photodiodes in the UV range

2014

We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.

Materials sciencebusiness.industryWide-bandgap semiconductorPhotodetectorSchottky diodeSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - ElettronicaTemperature measurementSchottky diodes silicon compounds photodetectors UV light silicon carbide responsivityPhotodiodelaw.inventionResponsivitychemistry.chemical_compoundchemistrylawSilicon carbideOptoelectronicsPhotonicsbusiness2014 Third Mediterranean Photonics Conference
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Time-Domain Integration of Terahertz pulses

2021

We report on the time-domain integration of terahertz pulses obtained via the tight confinement of the radiation in a tapered two-wire waveguide. Both simulation and experimental results prove the time integration capability of this structure.

PhysicsWaveguide (electromagnetism)business.industryTerahertz radiationPhysics::OpticsElectromagnetic radiationSettore ING-INF/01 - ElettronicaTerahertz spectroscopy and technologyTerahertz Time-Domain Integrationsymbols.namesakeOptical rectificationFourier transformsymbolsOptoelectronicsHeterodyne detectionTime domainbusiness
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CIGS PV Module Characteristic Curves Under Chemical Composition and Thickness Variations

2014

This paper analyzes how the electrical characteristics of a CIGS photovoltaic module are affected by the chemical composition and by the thickness variations of the CIGS absorber. The electrical characteristics here considered are the short circuit current, the open circuit voltage, the efficiency and the power peak. The chemical composition is varied by tuning the ratio between gallium and indium. This analysis has been performed by means of the wxAMPS software, developed by the University of Illinois. The above variations have been taken into account on a PV module made of 72 cells. This analysis has been carried out employing a PV module mathematical model developed and implemented by th…

EngineeringOpen-circuit voltagebusiness.industryPhotovoltaic systemchemistry.chemical_elementSettore ING-INF/02 - Campi ElettromagneticiSettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciCopper indium gallium selenide solar cellsPhotovoltaic Modules characterizationSettore ING-INF/01 - ElettronicaPower (physics)CIGS Photovoltaic ModulechemistryElectronic engineeringOptoelectronicsGalliumbusinessMATLABShort circuitcomputerSettore ING-INF/07 - Misure Elettriche E ElettronicheIndiumcomputer.programming_language
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Design and realization of a portable multichannel continuous wave fNIRS

2014

A design and implementation of a portable functional Near InfraRed Spectroscopy embedded system prototype is described. In this theoretical and experimental work, we present an embedded system hosting 64 LED sources and 128 Silicon PhotoMultiplier detectors (SiPM). The elementary part of the structure is a flexible probe “leaf” consisting of 16 SiPMs, 4 couples of LEDs, each operating at two wavelengths, and a temperature sensor. The hardware system is based on an ARM main microcontroller that allows to perform both the switching time of LEDs and the acquisition of the SiPM outputs. The performed preliminary experimental tests achieved very promising results, thus demonstrating the effectiv…

Materials scienceDetectorSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - ElettronicaSilicon PhotoMultiplierlaw.inventionSwitching timeembedded systemMicrocontrollerSilicon photomultiplierlawElectronic engineeringFunctional Near Infrared SpectroscopyFunctional near-infrared spectroscopyContinuous wavephotodetectorRealization (systems)Light-emitting diode2014 AEIT Annual Conference - From Research to Industry: The Need for a More Effective Technology Transfer (AEIT)
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Design and development of a fNIRS system prototype based on SiPM detectors

2014

Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board …

business.industryComputer scienceDetectorNear-infrared spectroscopySettore ING-INF/02 - Campi ElettromagneticiNear Infrared SpectroscopySilicon PhotomultipliersReflectivitySettore ING-INF/01 - ElettronicaImaging phantomlaw.inventionOpticsSilicon photomultiplierlawOptoelectronicsSensitivity (control systems)businessEmbedded SystemsImage resolutionSilicon PhotomultiplierLight-emitting diode
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Design and implementation of a portable fNIRS embedded system

2015

We report on the design, development and operation of a portable, low cost, battery-operated, multi-channel, functional Near Infrared Spectroscopy embedded system, hosting up to 64 optical sources and 128 Silicon PhotoMultiplier optical detectors. The system is realized as a scalable architecture, whose elementary leaf consists of a probe board provided with 16 SiPMs, 4 couples of bi-color LED, and a temperature sensor, built on a flexible stand. The hardware structure is very versatile because it is possible to handle both the switching time of the LED and the acquisition of the photodetectors, via an ARM based microcontroller.

Optical detectorsbusiness.industryComputer sciencePhotodetectorInfrared spectroscopyScalable architectureSilicon photomultiplierSettore ING-INF/01 - ElettronicaIndustrial and Manufacturing EngineeringSwitching timeMicrocontrollerSilicon photomultiplierEmbedded systemFunctional near-infrared spectroscopyFNIRS embedded systembusinessInfrared spectroscopyComputer hardware
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Backward second-harmonic generation of near infrared picosecond pulses

2014

We report on backward second-harmonic generation using picosecond laser pulses in congruent lithium niobate with 3.2 µm periodic poling. By tuning both the pump wavelength and the sample temperature, we observed three resonant peaks in the range 1530-1730 nm, corresponding to 16th, 17th and 18th quasi-phase-matching orders, respectively. A maximum conversion efficiency of 0.475% was achieved at the 16th order with a 10 kW peak pump power. The latter is the highest conversion reported in bulk to date, for the backward configuration, with an improvement greater than 50% with respect to those previously achieved with nanosecond pulses for the same order of resonance.

Settore ING-INF/02 - Campi ElettromagneticiNonlinear Optics Parametric Processes Harmonic Generation and Mixing Picosecond PhenomenaSettore ING-INF/01 - Elettronica
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Dependence of Terahertz Emission and Detection in Photoconductive Antennas on Laser Parameters

In this study, we employ a standard Terahertz time-domain spectroscopy (THz-TDS) setup based on two photoconductive antennas (PCAs) for THz radiation generation and detection. The characterization of the emission and detection performance as a function of the input pulse wavelength and bandwidth is performed.

THz time-domain spectroscopyphotoconductive antennasSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronica
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Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring

2014

We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of fu…

Materials sciencebusiness.industryDetectorSchottky diodeSTRIPSmedicine.disease_causeSettore ING-INF/01 - ElettronicaPhotodiodelaw.inventionResponsivityWavelengthchemistry.chemical_compoundOpticschemistrylawmedicineSilicon carbideOptoelectronicssic 4h-sic uv photodiodes schottky detectorsbusinessUltravioletSilicon Photonics IX
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Parametrical study of multilayer structures for CIGS solar cells

2014

In this paper, a numerical analysis of relevant electrical parameters of multilayer structures for CIGS-based solar cells was carried out, employing the simulation software wxAMPS. In particular, we have focused on thin film cells having a ZnO:Al/ZnO/CdS/CIGS structure with a Molybdenum back contact. The aim of this work is to establish good theoretical reference values for an ongoing experimental activity, where our technology of choice is the single-step electrodeposition. In detail, we have analyzed how the main electrical properties change with the bang gap and the thickness of the absorber layer, for such a type of solar cell structure. Our results show that both efficiency and fill fa…

Materials scienceOrganic solar cellbusiness.industryBand gapSolar cellSettore ING-INF/02 - Campi ElettromagneticiHybrid solar cellCIGSQuantum dot solar cellSettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciCopper indium gallium selenide solar cellsSettore ING-INF/01 - ElettronicaPolymer solar celllaw.inventionthin-filmlawSolar cellElectronic engineeringOptoelectronicsPlasmonic solar cellSettore CHIM/07 - Fondamenti Chimici Delle Tecnologiesingle-step electrodeposition.business
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Electro-Optical characterization of Silicon Carbide Schottky photodiodes

2014

Settore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronicasic schottky uv detector photodiode
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Affordable, ultra-broadband coherent detection of terahertz pulses via CMOS-compatible solid-state devices

2017

We demonstrate the first fully solid-state technique for the coherent detection of ultra-broadband THz pulses (0.1-10 THz), relying on the electric-field-induced second-harmonic generation attained in integrated CMOS-compatible devices.

Materials sciencebusiness.industryTerahertz radiationSpectral densitySecond-harmonic generationSettore ING-INF/02 - Campi Elettromagnetici02 engineering and technology021001 nanoscience & nanotechnologySettore ING-INF/01 - Elettronica01 natural sciencesElectromagnetic radiationTerahertz spectroscopy and technologyOpticsNonlinear optics Ultrafast optics Far infrared or terahertz Solid state detectorsElectric field0103 physical sciencesBroadbandOptoelectronicsHeterodyne detection010306 general physics0210 nano-technologybusinessConference on Lasers and Electro-Optics
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Terahertz Time-Domain Spectroscopy setup based on photoconductive antennas

2016

Despite the technical difficulties in developing efficient and compact sources and detectors for Terahertz (THz) radiation, this region of the electromagnetic spectrum is attracting an ever-increasing interest, due to its peculiar and high-potential applications in several fields, such as wideband communications, medicine, biology, non-destructive testing, security and defense. Within such contexts, the most widespread approach aiming to deal with THz pulses is based on the THz Time-Domain Spectroscopy (THz-TDS) system. In this work, we present our experimental results obtained by means of a THz-TDS set-up based on photoconductive antennas for both the generation and detection stage. It is …

Terahertz SpectroscopySettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - ElettronicaPhotoconductive Antennas.
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Asymmetric Dual-Grating Micro-Slit Configuration for Broadband Solid State Coherent Detection of THz Pulses

2016

We demonstrated solid-state broadband coherent Terahertz characterization based on the Terahertz Field Induced Second Harmonic effect in Silica. The THz detector consists of an asymmetric micro-slit array which can be operated at 200V applied bias.

Materials scienceField (physics)business.industryTerahertz radiationSolid-statePhysics::Optics02 engineering and technologyGrating021001 nanoscience & nanotechnology01 natural sciencesSlitTerahertz spectroscopy and technology0103 physical sciencesBroadbandHarmonicOptoelectronics010306 general physics0210 nano-technologybusiness
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Silicon Photomultipliers Signal-to-Noise Ratio in the Continuous Wave Regime

2014

 Abstract— We report on Signal-to-Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a class of silicon photomultipliers fabricated in planar technology on silicon p- type substrate. Signal-to-Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal-to-Noise Ratio, as a function of the tempe…

PhotomultiplierMaterials sciencePhysics::Instrumentation and Detectorsbusiness.industryAmplifierElectrical engineeringShot noiseSettore ING-INF/02 - Campi ElettromagneticiNoise (electronics)Settore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSignal-to-noise ratioOpticsSilicon photomultiplierSiPM SNR noise silicon detector photomultiplierContinuous waveElectrical and Electronic EngineeringbusinessDark current
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Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection

2018

We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.

Materials scienceSiliconbusiness.industryTerahertz radiationTerahertzchemistry.chemical_elementNonlinear opticsSettore ING-INF/01 - Elettronica01 natural sciencesTerahertz spectroscopy and technologycoherent detection010309 opticschemistry.chemical_compoundsilicon nitridechemistrySilicon nitride0103 physical sciencesBroadbandOptoelectronicsHeterodyne detectionThin film010306 general physicsbusiness
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Electro-optical characterization of new classes of Silicon Carbide UV photodetectors

2014

In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in $\hbox{Ni}_{2}\hbox{Si}$ . These devices exploit the pinch-off surface effect. $I$ – $V$ and $C$ – $V$ characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10- $\mu\hbox{m}$ pitch class demonstrates …

lcsh:Applied optics. PhotonicsMaterials scienceFabricationbusiness.industrysic uv photodetector detector silicon carbide responsivitySchottky diodePhotodetectorlcsh:TA1501-1820Settore ING-INF/02 - Campi ElettromagneticiSTRIPSTemperature measurementSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsPhotodiodelaw.inventionResponsivitychemistry.chemical_compoundchemistrylawSilicon carbideOptoelectronicslcsh:QC350-467Electrical and Electronic Engineeringbusinesslcsh:Optics. Light
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A wideband THz Time Domain Spectroscopy table-top system based on ultrafast pulsed laser: Model and experiments

2014

We present an analytical model carefully describing the time-frequency behavior of all the stages composing our whole Terahertz Time Domain Spectroscopy laser based system, from the THz pulses generation via Optical Rectification, to their detection through Electro-Optic Sampling technique, by way of diffraction, collecting and focusing effects. In order to prove the effectiveness of our work, we report on the comparison among the experimental waveforms and the simulation results.

DiffractionMaterials scienceTerahertz radiationbusiness.industryLaserlaw.inventionTerahertz spectroscopy and technologyOptical rectificationOpticslawWidebandbusinessTerahertz time-domain spectroscopyUltrashort pulse2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)
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Tapered Two-Wire Waveguide for Time-Domain Integration of Broadband Terahertz Pulses

2021

We show the time-domain integration of terahertz pulses achieved in a sub-wavelength, tapered two-wire waveguide. Both simulation and experimental results prove the time integration functionality of this waveguide topology.

Physicsbusiness.industryTerahertz radiationPhysics::OpticsTopology (electrical circuits)Terahertz spectroscopy and technologysymbols.namesakeFourier transformBroadbandsymbolsOptoelectronicsWaveguide (acoustics)Time domainHeterodyne detectionTerahertz Time-domain integration WaveguidesbusinessNonlinear Sciences::Pattern Formation and SolitonsOSA Advanced Photonics Congress 2021
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A wideband THz Time Domain Spectroscopy system based on pulsed laser: model and experiments

2014

terahertz thz time domain spectroscopy pulsed laserSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronica
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Signal to Noise Ratio of Silicon Photomultipliers: a study in the Continuous Wave Regime

2014

We report on Signal to Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a novel class of silicon photomultipliers fabricated in planar technology on silicon p-type substrate. Signal to Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal to Noise Ratio, as a function of the temperature …

Settore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - Elettronicasipm snr photomultiplier noise silicon
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CIGS Thin Film by One-Step Electrodeposition Deposition for Solar Cells

2013

Settore ING-IND/23 - Chimica Fisica ApplicataPhotovoltaics thin filmSettore ING-INF/01 - Elettronica
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Ultra-broadband terahertz time domain spectroscopy by Solid State Biased Coherent Detection

2017

The spectral fingerprint of ibuprofen within the THz frequency window has been retrieved through an ultra-broadband THz Time Domain Spectrometry set-up. The latter implements the Solid State Biased Coherent Detection scheme, based on a compact CMOS-compatible integrated device. Such a technique shows unprecedented advantages in term of bandwidth (greater than 10 THz) over other solid state methods like electro-optic sampling.

Physicsbusiness.industryTerahertz radiationBandwidth (signal processing)Solid-stateNonlinear optics02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesOptics0103 physical sciencesBroadbandTime domain010306 general physics0210 nano-technologybusinessTerahertz time-domain spectroscopySpectroscopy2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Versatile metal-wire waveguides for broadband terahertz signal processing and multiplexing.

2022

AbstractWaveguides play a pivotal role in the full deployment of terahertz communication systems. Besides signal transporting, innovative terahertz waveguides are required to provide versatile signal-processing functionalities. Despite fundamental components, such as Bragg gratings, have been recently realized, they typically rely on complex hybridization, in turn making it extremely challenging to go beyond the most elementary functions. Here, we propose a universal approach, in which multiscale-structured Bragg gratings can be directly etched on metal-wires. Such an approach, in combination with diverse waveguide designs, allows for the realization of a unique platform with remarkable str…

MultidisciplinaryScienceQPhysics::OpticsGeneral Physics and AstronomyGeneral ChemistryTerahertz signal processing Terahertz multiplexing WaveguidesSettore ING-INF/01 - ElettronicaGeneral Biochemistry Genetics and Molecular BiologyNature communications
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Blood Pressure Monitoring with a PPG Embedded System

2014

embedded systemPhotoPlethysmoGraphysensorSettore ING-INF/02 - Campi ElettromagneticiSettore ING-INF/01 - ElettronicaSilicon PhotoMultiplier
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ULTRA-BROADBAND COHERENT DETECTION OF TERAHERTZ PULSES VIA CMOS-COMPATIBLE SOLID-STATE DEVICES

Il presente lavoro di tesi presenta e dimostra una tecnica innovativa e completamente integrata dedita alla rilevazione coerente di radiazioni a frequenze Terahertz (THz), cioè di onde elettromagnetiche il cui contenuto frequenziale cade convenzionalmente nella finestra spettrale compresa tra 0.1-10x1012 Hz. Tale tecnica è stata battezzata col nome di solid-state-biased coherent detection (SSBCD), dal momento che essa sfrutta le proprietà di un mezzo a stato solido e consente di ricostruire simultaneamente l’informazione sulla fase e sull’ampiezza degli impulsi THz, anche nel caso in cui quest’ultimi siano dotati di spettri a banda cosiddetta “ultra larga” (> 10 THz). Tale metodo di rivelaz…

THz TechnologySolid-state devicesNonlinear OpticsUltrafast OpticsSettore ING-INF/01 - Elettronica
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Wideband THz time domain spectroscopy set-up based on ultrafast pulsed laser: model and experiments

2014

We present an analytical model describing the full electromagnetic propagation in a THz Time Domain Spectroscopy (THz-TDS) laser based system. We pay particular attention to the modelling of the time-frequency behavior of all the stages, which compose our experimental set-up. In particular, our model takes into account the following features: pump beam focusing into the generation crystal; phase-matching between pump and THz pulses inside both the generation and detection crystals; chromatic dispersion and absorption inside the materials; Fabry-Perot effect in both the crystals; diffraction along the propagation, focalization and overlapping between THz and probe beams; Electro-Optic Sampli…

Settore ING-INF/02 - Campi ElettromagneticiNonlinear Optics Terahertz Ultrafast PhotonicsSettore ING-INF/01 - Elettronica
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