0000000001317574
AUTHOR
Guillermo Muñoz-matutano
showing 28 related works from this author
Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots
2012
We have investigated the temperature dependent recombination dynamics in two bimodally distributed InAs self assembled quantum dots samples. A rate equations model has been implemented to investigate the thermally activated carrier escape mechanism which changes from exciton-like to uncorrelated electron and hole pairs as the quantum dot size varies. For the smaller dots, we find a hot exciton thermal escape process. We evaluated the thermal transfer process between quantum dots by the quantum dot density and carrier escape properties of both samples. © 2012 American Institute of Physics.
Different strategies towards the deterministic coupling of a single Quantum Dot to a photonic crystal cavity mode
2011
In this work we show two different procedures of fabrication aiming towards the systematic positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) microcavity. The two approaches are based on the molecular beam epitaxial (MBE) growth of site-controlled QDs (SCQDs) on pre-patterned structures. The PC microcavity (PCM) is introduced previous or after the growth, on each case. We demonstrate the InAs SCQD nucleation on pre-patterned PCMs and a method to perform the QD nucleation respect to an etched ruler that is used to position the PC structure after growth. For both types of structures, we have carried out microphotoluminescence (µPL) spectroscopy experiments a…
Charge control in laterally coupled double quantum dots
2011
4 figuras, 4 páginas.-- PACS number(s): 78.67.Hc, 73.21.La, 78.55.Cr
Two-Color Single-Photon Emission from In As Quantum Dots: Toward Logic Information Management Using Quantum Light
2014
In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons input/output device…
Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics
2019
Optical studies of single self-assembled semiconductor quantum dots (QDs) have been a topic of intensive investigation over the past two decades. Due to their solid-state nature, their electronic and optical emission properties are affected by the particular crystal structure as well as many-body-carrier interactions and dynamics. In this work, we use a master equation for microstates (MEM) model to study the carrier capture and escape from single QDs under optical nonresonant excitation and under the influence of a two-dimensional (2D) carrier reservoir (the wetting layer). This model reproduces carrier dynamics from power-dependent and time-resolved microphotoluminescence experiments . Du…
Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots
2013
We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies.…
Optical switching of quantum states inside self-assembled quantum dots
2008
Abstract Photoluminescence and excitation of photoluminescence spectroscopy have been performed for two kinds of single InAs self-assembled quantum dots grown on GaAs. The presence of unintentional impurities (donors and acceptors) offers the possibility to switch from negative to positively charged excitons by selectively exciting impurity related optical transitions.
Time resolved emission at 1.3 μm of a single InAs quantum dot by using a tunable fibre Bragg grating
2013
Photoluminescence and time resolved photoluminescence from single metamorphic InAs/GaAs quantum dots (QDs) emitting at 1.3 mu m have been measured by means of a novel fibre-based characterization set-up. We demonstrate that the use of a wavelength tunable fibre Bragg grating filter increases the light collection efficiency by more than one order of magnitude as compared to a conventional grating monochromator. We identified single charged exciton and neutral biexciton transitions in the framework of a random population model. The QD recombination dynamics under pulsed excitation can be understood under the weak quantum confinement potential limit and the interaction between carriers at the …
Parallel Recording of Single Quantum Dot Optical Emission Using Multicore Fibers
2016
Single Indium Arsenide Quantum Dot emission spectra have been recorded using a four-core, crosstalk-free, multicore fiber placed at the collection arm of a confocal microscope. We developed two different measurement set-ups depending on the relative configuration of the excitation and collection spots. In the single-matched mode, the emission from the excited area is collected by a single core in the multicore fiber, whereas the three remaining cores capture the emission from neighboring, non-excited areas. This procedure allows for the recording of the Quantum Dot emission from carrier diffusion between sample positions separated by more than 6 μm. In the multiple-matched mode, the ex…
Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
2009
5 páginas, 5 figuras.
Free spectral range enlargement by selective suppression of optical modes in photonic crystal L7 microcavities
2015
We show an enlargement in the free spectral range (FSR) of the emission spectra of a L7 photonic crystal microcavity (PCM). The FSR enlargement is achieved by the selective modal suppression of the second cavity mode. The selective suppression is made by introducing two nano-inclusions in specific sites within the defect region that forms the cavity. We have demonstrated the suppression of the second mode of the L7-PCM, and a significant increase in the FSR of the fundamental mode. The method provides an alternative to engineer the modal structure of a photonic crystal microcavity. The large FSR-value might improve the emission properties of light sources based on photonic crystal structure…
Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths
2014
We report on the design, the growth by MBE and the optical and morphological characterization of metamorphic InAs/InGaAs quantum dots (QD) with a density low enough to allow single dot characterization without the need of complex litographic steps to isolate single QDs. InAs sub-critical coverages were deposited on InxGa1-xAs metamorphic buffers (MBs) and the transition from 2D growth to 3D island nucleation was monitored by reflection high energy electron diffraction (RHEED). We discuss the fundamental differences of the sub-critical growth method compared with the Stranski-Krastanow one, also by considering available theoretical models. AFM confirmed that the density of QDs can be control…
Excitation power dependence of the Purcell effect in photonic crystal microcavity lasers with quantum wires
2013
The Purcell effect dependence on the excitation power is studied in photonic crystal microcavity lasers embedding InAs/InP quantum wires. In the case of non-lasing modes, the Purcell effect has low dependence on the optical pumping, attributable to an exciton dynamics combining free and localized excitons. In the case of lasing modes, the influence of the stimulated emission makes ambiguous the determination of the Purcell factor. We have found that this ambiguity can be avoided by measuring the dependence of the decay time on the excitation power. These results provide insights in the determination of the Purcell factor in microcavity lasers. © 2013 AIP Publishing LLC.
A fluorescent layered oxalato-based canted antiferromagnet
2018
We report the synthesis and characterization of the first fluorescent oxalato-based canted antiferromagnet. Compound [DOC][MnFe(C2O4)3] (1) (DOC = 3,3'-diethyloxacarbocyanine) combines the well-known canted antiferromagnetic [MnFe(C2O4)3]- honeycomb layers with a fluorescent cationic cyanine-type fluorescent dye. Besides the expected spin canted antiferromagnetic order in the oxalato layer at ca. 29 K, we show the key role played by the anionic oxalato lattice in the optical properties of the cation since it provides isolation of dye cations in the hexagonal cavities of the oxalato-based matrix. The emission of the DOC+ dye shows a redshift and a broadening of the emission as well as an inc…
Homogeneous and inhomogeneous broadening in single perovskite nanocrystals investigated by micro-photoluminescence
2021
Abstract Metal halides with perovskite crystalline structure have given rise to efficient optoelectronic and photonic devices. In the present work, we have studied the light emission properties of single CsPbBr3 and CsPbI3 semiconductor perovskite nanocrystals (PNCs), as the basis for a statistical analysis of micro-photoluminescence (micro-PL) spectra measured on tens of them. At room temperature, the linewidth extracted from PL spectra acquired in dense films of these nanocrystals is not very different from that of micro-PL measured in single nanocrystals. This means that the homogeneous linewidth due to exciton-phonon interaction is comparable or larger than the inhomogeneous effect asso…
Thermal activated carrier transfer between InAs quantum dots in very low density samples
2010
In this work we develop a detailed experimental study of the exciton recombination dynamics as a function of temperature on QD-ensembles and single QDs in two low density samples having 16.5 and 25 dots/¼m2. We corroborate at the single QD level the limitation of the exciton recombination time in the smallest QDs of the distribution by thermionic emission (electron emission in transient conditions). A portion of these emitted carriers is retrapped again in other (larger) QDs, but not very distant from those emitting the carriers, because the process is limited by the diffusion length at the considered temperature.
Tunable light emission by exciplex state formation between hybrid halide perovskite and core/shell quantum dots: Implications in advanced LEDs and ph…
2016
A perovskite–quantum dot exciplex has been detected, opening a broad range of possibilities for advanced optoelectronic devices.
Exciton Gas Compression and Metallic Condensation in a Single Semiconductor Quantum Wire
2008
4 páginas, 5 figuras.-- PACS numbers: 78.67.Lt, 71.30.+h, 71.35. -y.-- Comunicación presentada a la International Conference on the Physics of Semiconductors (ICPS) celebrada en Rio de Jqaneiro (Brasil/2008).
All-Optical Fiber Hanbury Brown & Twiss Interferometer to study 1300 nm single photon emission of a metamorphic InAs Quantum Dot
2016
[EN] New optical fiber based spectroscopic tools open the possibility to develop more robust and efficient characterization experiments. Spectral filtering and light reflection have been used to produce compact and versatile fiber based optical cavities and sensors. Moreover, these technologies would be also suitable to study N-photon correlations, where high collection efficiency and frequency tunability is desirable. We demonstrated single photon emission of a single quantum dot emitting at 1300 nm, using a Fiber Bragg Grating for wavelength filtering and InGaAs Avalanche Photodiodes operated in Geiger mode for single photon detection. As we do not observe any significant fine structure s…
Stroboscopic Space Tag for Optical Time-Resolved Measurements with a Charge Coupled Device Detector
2018
Time-resolved measurements are extensively employed in the study of light–matter interaction at the nanoscale such as the exciton dynamics in semiconductors or the ultrafast intraband transitions in metals. Importantly, single-photon correlation, quantum state tomography, and other techniques devoted to the characterization of quantum optics systems rely on time-resolved experiments, whose resolution which is bound to the time response of the detector and related electronics. For this reason, multiplexing or beam deflection techniques have been recently proposed to overcome the detector resolution and thus measure the final photon distribution characteristics. Taking advantage of both strat…
Exciton, biexciton and trion recombination dynamics in a single quantum dot under selective optical pumping
2008
Continuous wave- and time-resolved micro-photoluminescence spectroscopy has been performed on single InAs self-assembled quantum dots grown on GaAs. The presence of residual impurities (donors and acceptors) in samples with low dot density opens the possibility to switch from trion to neutral exciton states inside quantum dots by selective optical pumping. We propose a microstate model to describe the recombination dynamics of all the excitonic especies (neutral exciton, positive/negative trion and biexciton) under the considered optical pumping conditions when increasing the excitation power. © 2007 Elsevier B.V. All rights reserved.
Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping
2011
18 páginas, 3 tablas, 9 figuras.-- et al.
Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes
2010
Trabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (OECS), celebrada en en Madrid (España) del 7 al 11 de Septiembre de 2009.
The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots
2013
[EN] The structural and morphological features of bimodal-sized InAs/(In) GaAs quantum dots with density in the low 10(9) cm(-2) range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and time-resolved photoluminescence. We show that only the family of small quantum dots (QDs) is able to emit narrow photoluminescence peaks characteristic of single-QD spectra; while the behavior of large QDs is attributed to large strain fields that may induce defects affecting their optical properties, decreasing the optical intensity and broadening the homogeneous linewidth. Then, by using a rat…
Bistable phase locking in rocked lasers
2006
Abstract We investigate analytically and numerically the dynamics of single mode lasers with periodic ac injection (rocked lasers). Such lasers show phase bistability as the phase of the light emitted by such lasers can lock to either of two values shifted by π. Locking regimes for different lasers are studied showing that the system response is strongly modified in class B lasers due to the influence of relaxation oscillations.
Metasurfaces for colour printing
2014
We present a theoretical analysis and experimental evidences of metasurfaces based on particle resonators that achieve bright-field colour prints. We created pixels that support individual colours, miniaturized and juxtaposed at the optical diffraction limit. Different strategies are followed to offer the flexibility of using both transmitting and epi (reflective) white light sources. We discuss their potential applications in large-volume colour printing via nanoimprint lithography.
Extrinsic Effects on the Optical Properties of Surface Color Defects Generated in Hexagonal Boron Nitride Nanosheets
2021
Hexagonal boron nitride (hBN) is a wide-band gap van der Waals material able to host light-emitting centers behaving as single photon sources. Here, we report the generation of color defects in hBN nanosheets dispersed on different kinds of substrates by thermal treatment processes. The optical properties of these defects have been studied using microspectroscopy techniques and far-field simulations of their light emission. Using these techniques, we have found that subsequent ozone treatments of the deposited hBN nanosheets improve the optical emission properties of created defects, as revealed by their zero-phonon linewidth narrowing and reduction of background emission. Microlocalized co…
CCDC 1828981: Experimental Crystal Structure Determination
2018
Related Article: Samia Benmansour, Christian Cerezo-Navarrete, Josep Canet-Ferrer, Guillermo Muñoz-Matutano, Juan Martínez-Pastor, Carlos J. Gómez-García|2018|Dalton Trans.|47|11909|doi:10.1039/C8DT01473F