6533b7dcfe1ef96bd127178a

RESEARCH PRODUCT

Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

Benito AlénD. RivasGuillermo Muñoz-matutanoJosep Canet-ferrerDavid FusterYolanda GonzálezLuisa GonzálezJuan P. Martínez-pastorJesús Herranz

subject

congenital hereditary and neonatal diseases and abnormalitiesPhotoluminescenceMaterials sciencegenetic structuresPhysics and Astronomy (miscellaneous)ExcitonPhysics::OpticsElectronic structureEmissionCondensed Matter::Materials ScienceFine structureBiexcitonPhotonsCondensed Matter::Otherbusiness.industrynutritional and metabolic diseasesCondensed Matter::Mesoscopic Systems and Quantum Hall Effecteye diseasesClose proximitySurfacesQuantum dotExcited stateOptoelectronicsInAs site-controlled quantum dots optical properties fine structure splittingbusinessGround stateState

description

We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies. © 2013 AIP Publishing LLC.

yearjournalcountryeditionlanguage
2013-01-01
10.1063/1.4828352https://hdl.handle.net/10251/40431