Influence of the electro-optical properties of an a-Si:H single layer on the performances of a pin solar cell

6533b82ffe1ef96bd129537a

RESEARCH PRODUCT

Influence of the electro-optical properties of an a-Si:H single layer on the performances of a pin solar cell

Francesca Simone F.s. Ruggeri G. Catania Francesco Priolo Isodiana Crupi Francesco Ruffino A. Grasso A.m. Piro Salvatore Mirabella S. Di Marco

subject

Amorphous silicon Thin film material Thin film solar cell Activation energy Single junction Conductivity Settore ING-INF/01 - Elettronica Settore FIS/03 - Fisica Della Materia law.invention chemistry.chemical_compound Electric conductivity law Materials Chemistry Thin film Absorption (electromagnetic radiation)Preexponential factor Gas-flow ratio Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials Temperature dependence Hydrogenated amorphous silicon Optoelectronics Electric propertie Quantum efficiency Hydrogenation Optical data processing Deposition condition Silicon Materials science Activation energy Quantum efficiency Synthesis condition Vapor deposition Silicon Optics Solar cell Activation energy Dark conductivity Characterization studie Electromagnetic wave absorption Thin film Deposition Electrooptical propertie Thin film solar cell Conductivity business.industry Energy conversion efficiency Solar cell Amorphous silicon Meyer-Neldel rule Optical propertie Optical measurement electro-optical properties Nanostructured material Silicon; Solar cell; electro-optical properties Electrical transport chemistry Synthesis parameter Optical variables measurement Single layer Conversion efficiency business Optical gap

description

We analyze the results of an extensive characterization study involving electrical and optical measurements carried out on hydrogenated amorphous silicon (α-Si:H) thin film materials fabricated under a wide range of deposition conditions. By adjusting the synthesis parameters, we evidenced how conductivity, activation energy, electrical transport and optical absorption of an α-Si:H layer can be modified and optimized. We analyzed the activation energy and the pre-exponential factor of the dark conductivity by varying the dopant-to-silane gas flow ratio. Optical measurements allowed to extract the absorption spectra and the optical bandgap. Additionally, we report on the temperature dependence of the activation energy to satisfy the Meyer-Neldel rule. Finally, the influence of the individual films parameters upon the final performances of a single junction pin α-Si:H have been studied. The measurements show how a more than doubled enhancement in energy conversion efficiency can be obtained in an α-Si:H solar cell with a proper selection of synthesis conditions. © 2012 Elsevier B.V. All rights reserved.

year	journal	country	edition	language
2012-03-01

10.1016/j.tsf.2012.01.044 http://hdl.handle.net/20.500.11769/45022