6533b831fe1ef96bd1299871

RESEARCH PRODUCT

Photoluminescence of Point Defects in Silicon Dioxide by Femtosecond Laser Exposure

Emmanuel MarinSylvain GirardVincenzo De MicheleVincenzo De MicheleYoucef OuerdaneAziz BoukenterMarco Cannas

subject

Materials sciencePhotoluminescenceamorphous silicastructural modificationsSilicon dioxide02 engineering and technology01 natural scienceschemistry.chemical_compoundonline photoluminescence0103 physical sciencesMaterials Chemistrypoint defectsElectrical and Electronic Engineering010306 general physicsfemtosecond lasersComputingMilieux_MISCELLANEOUS[PHYS]Physics [physics]business.industrySettore FIS/01 - Fisica SperimentaleSurfaces and Interfaces021001 nanoscience & nanotechnologyCondensed Matter PhysicsCrystallographic defectSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryFemtosecondOptoelectronicsLaser exposureAmorphous silica0210 nano-technologybusiness

description

The nature of the radiation-induced point defects in amorphous silica is investigated through online photoluminescence (PL) under high intensity ultrashort laser pulses. Using 1030 nm femtosecond laser pulses with a repetition rate of 1 kHz, it is possible to study the induced color centers through their PL signatures monitored during the laser exposure. Their generation is driven by the nonlinear absorption of the light related to the high pulse peak powers provided by femtosecond laser, allowing to probe the optical properties of the laser exposed region. The experiment is conducted as a function of the laser pulse power in samples with different OH contents. The results highlight the different interaction regimes attained by varying the irradiation conditions for various chemical compositions. Moreover, the online measurements are combined with postmortem characterization of the damaged area, via phase contrast microscopy, Raman and steady-state PL spectroscopies, highlighting the potential of these online femtosecond tests to provide additional knowledge to the postmortem technique ones.

10.1002/pssa.202000802https://hal-ujm.archives-ouvertes.fr/ujm-03271883