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RESEARCH PRODUCT
Anisotropic polarization of non‐polar GaN quantum dot emission
Bruno DaudinRafael MataEdith Bellet-amalricJ. A. BudagoskyAlberto García-cristóbalAna CrosAnna VinattieriNúria GarroS. FountaMassimo Guriolisubject
Condensed Matter::Materials SciencePhotoluminescenceCondensed matter physicsChemistryQuantum dotPerpendicularDegree of polarizationHeterojunctionCondensed Matter PhysicsAnisotropyPolarization (waves)Wurtzite crystal structuredescription
We report on experimental and theoretical studies of the polarization selection rules of the emission of non-polar GaN/AlN self-assembled quantum dots. Time-integrated and time-resolved photoluminescence measurements have been performed to determine the degree of polarization. It is found that the emission of some samples can be predominantly polarized parallel to the wurtzite c axis, in striking difference with the previously reported results for bulk GaN and its heterostructures, in which the emission was preferentially polarized perpendicular to the c axis. Theoretical calculations based on an 8-band k·p model are used to analyze the relative importance of strain, confinement and quantum dot shape on the polarization selection rules. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-05-26 | physica status solidi c |