Search results for " CIRCUIT"

Hard X-Ray Response of Pixellated CdZnTe Detectors

2009

In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm3 single crystals) have an anode layout based on an array of 256 pixels with a …

Unstable behaviour of normally-off GaN E-HEMT under short-circuit

2018

The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving the…

Thermo-optic control of dielectric-loaded plasmonic waveguide components

2010

International audience; We report preliminary results on the development of compact (length 20%) is demonstrated with MZI-and WRR-based components, and efficient (similar to 30%) rerouting is achieved with DC switches. (C) 2010 Optical Society of America

WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits

2020

International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…

Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction

2011

We characterize SnO(2):F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for vertical bar V vertical bar< 0:1 V and have a super-linear behavior (power law) for vertical bar V vertical bar < 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the …

Improvement of DSSC performance by voltage stress application

2016

Dye-sensitized solar cells (DSSCs) are promising third generation photovoltaic devices given their potential low cost and high efficiency. Some factors still affect DSSCs performance, such structure of electrodes, electrolyte compositions, nature of the sensitizers, power conversion efficiency, long-term stability, etc. In this work we discuss the effect of electrical stresses, which allow to improve DSSC performance. We have investigated the outcomes of forward and reverse DC bias stress as a function of time, voltage, and illumination level in the DSSCs sensitized with the N719, Ruthenium complex based dye. We demonstrate that all the major solar cell parameters, i.e., open circuit voltag…

Hybrid Circuits with Nanofluidic Diodes and Load Capacitors

2017

[EN] The chemical and physical input signals characteristic of micro- and nanofluidic devices operating in ionic solutions should eventually be translated into output electric currents and potentials that are monitored with solid-state components. This crucial step requires the design of hybrid circuits showing robust electrical coupling between ionic solutions and electronic elements. We study experimentally and theoretically the connectivity of the nanofluidic diodes in single-pore and multipore membranes with conventional capacitor systems for the cases of constant, periodic, and white-noise input potentials. The experiments demonstrate the reliable operation of these hybrid circuits ove…

Ionic circuitry with nanofluidic diodes

2019

Ionic circuits composed of nanopores functionalized with polyelectrolyte chains can operate in aqueous solutions, thus allowing the control of electrical signals and information processing in physiological environments. We demonstrate experimentally and theoretically that different orientations of single-pore membranes with the same and opposite surface charges can operate reliably in series, parallel, and mixed series-parallel arrangements of two, three, and four nanofluidic diodes using schemes similar to those of solid-state electronics. We consider also different experimental procedures to externally tune the fixed charges of the molecular chains functionalized on the pore surface, show…

Pragmatic analysis of perovskite solar cells through a rationalized impedance spectroscopy equivalent circuit.

2020

Compact acousto-optic multimode interference device in (Al,Ga)As.

2020

Multimode interference (MMI) devices are key components in modern integrated photonic circuits. Here, we present acoustically tuned optical switches on an (Al,Ga)As platform that enable robust, compact and fast response systems improving on recently demonstrated technology. The device consists of a 2 × 2 MMI device fine-tuned in its center region by a focused surface acoustic wave (SAW) beam working in the low GHz range. In this way, we can tune the refractive index profile over a narrow modulation region and thus control the optical switching behaviour via the applied SAW intensity. Direct tuning of the MMI device avoids losses and phase errors inherent to arrayed waveguide based switches,…