Search results for " Crystal structure"
showing 10 items of 129 documents
Pressure dependence of the optical properties of wurtzite and rock-salt Zn1–xCoxO thin films
2007
In this paper we investigate the electronic structure of Zn 1-x Co x O by means of optical absorption measurements under pressure. Thin films of Zn 1-x Co x O with different Co content (from 1 to 30%) were prepared by pulsed laser deposition on mica substrates. Absorption spectra exhibit three main features that are clearly correlated to the Co content in the films: (i) absorption peaks in the infrared associated to crystal-field-split internal transitions in the Co 3d shell, with very small pressure coefficients due to their atomic character; (ii) a broad absorption band below the fundamental edge associated to charge transfer transitions, that exhibit relatively large pressure coefficient…
Structure and properties of GaNxOy films grown by nitridation of GaAs (100) substrates
2004
GaAs (100) substrates have been heat-treated in a metal-organic chemical vapor deposition reactor under flows of NH 3 and an oxygen organo-metallic precursor at temperatures between 650°C and 750°C. Yellowish films formed at the surface of all the samples. Gallium, nitrogen and oxygen were detected by EDX analysis of the films. The oxygen content was estimated in the range of at 5-10 at% depending on the heat-treatment temperature. X-ray diffraction and HRTEM results indicate that the structure of the films corresponds to the hexagonal wurtzite phase of GaN with an expanded unit cell. Raman spectra show hands corresponding to the Raman active GaN modes as well as disorder-activated broad ba…
A convenient route for the preparation of the monohydride catalyst trans-[RuCl(H)(dppe)2] (dppe=Ph2PCH2CH2PPh2): improved synthesis and crystal struc…
2013
Abstract A novel and improved room temperature synthesis of the monohydride catalyst trans-[RuCl(H)(dppe)2] complex (1, dppe (1,2-bis(diphenylphosphino)ethane) = Ph2PCH2CH2PPh2) proceeds through oxidation of methanol (the solvent) by the pentacoordinated cis-[RuCl(dppe)2][PF6] complex and t-BuOK as the base is described. Compound 1 was fully characterized by NMR (1H, 13C, 31P), ESI-MS(TOF +), FTIR and elemental analysis. The X-ray structure of 1 was reported for the first time and unambiguously confirms the trans-configuration of the complex.
Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
2008
Raman spectra of aluminum nitride (AlN) under pressure have been measured up to $25\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$, i.e., beyond the onset of the wurtzite-to-rocksalt phase transition around $20\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$. The experimental pressure coefficients for all the Raman-active modes of the wurtzite phase are reported and compared to those obtained from ab initio lattice dynamical calculations, as well as to previous experimental and theoretical results. The pressure coefficients of all the Raman-active modes in wurtzite-type semiconductors (AlN, GaN, InN, ZnO, and BeO), as well as the relatively low bulk modulus and phase transition pressure in wurtzite AlN, a…
The structure of charoite, (K,Sr,Ba,Mn)(15-16)(Ca,Na)(32)[(Si-70(O,OH)(180))](OH,F)(4.0)center dot nH(2)O, solved by conventional and automated elect…
2010
AbstractCharoite, ideally (K,Sr,Ba,Mn)15–16(Ca,Na)32[(Si70(O,OH)180)](OH,F)4.0·nH2O, a rare mineral from the Murun massif in Yakutiya, Russia, was studied using high-resolution transmission electron microscopy, selected-area electron diffraction, X-ray spectroscopy, precession electron diffraction and the newly developed technique of automated electron-diffraction tomography. The structure of charoite (a= 31.96(6) Å,b= 19.64(4) Å,c= 7.09(1) Å, β = 90.0(1)°,V= 4450(24) Å3, space groupP21/m) was solvedab initioby direct methods from 2878 unique observed reflections and refined toR1/wR2= 0.17/0.21. The structure can be visualized as being composed of three different dreier silicate chains: a d…
High-pressure study of substrate material ScAlMgO4
2011
We report on the structural properties of ScAlMgO4 studied under quasi-hydrostatic pressure using synchrotron high-pressure x-ray diffraction up to 40 GPa. We also report on single-crystal studies of ScAlMgO4 performed at 300 K and 100 K. We found that the low-pressure phase remains stable up to 24 GPa. At 28 GPa, we detected a reversible phase transformation. The high-pressure phase is assigned to a monoclinic distortion of the low-pressure phase. No additional phase transition is observed up to 40 GPa. In addition, the equation of state, compressibility tensor, and thermal expansion coefficients of ScAlMgO4 are determined. The bulk modulus of ScAlMgO4 is found to be 143(8) GPa, with a str…
Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds
2008
The XYZ half-Heusler crystal structure can conveniently be described as a tetrahedral zinc blende YZ structure which is stuffed by a slightly ionic X species. This description is well suited to understand the electronic structure of semiconducting 8-electron compounds such as LiAlSi (formulated Li$^+$[AlSi]$^-$) or semiconducting 18-electron compounds such as TiCoSb (formulated Ti$^{4+}$[CoSb]$^{4-}$). The basis for this is that [AlSi]$^-$ (with the same electron count as Si$_2$) and [CoSb]$^{4-}$ (the same electron count as GaSb), are both structurally and electronically, zinc-blende semiconductors. The electronic structure of half-metallic ferromagnets in this structure type can then be d…
Lattice Dynamics in Wurtzite Semiconductors: The Bond Charge Model of CdS
1999
An extension of the adiabatic bond charge model of Rustagi and Weber is used to study the lattice dynamic properties of wurtzite-type compounds. The model has been applied to the description of the phonon dispersion of CdS, which has been recently measured by neutron scattering. The agreement with the neutron data is excellent with a small set of physically meaningful parameters. The eigenvector admixture of the E2 modes, calculated at the G-point, agrees with the experimental values obtained through the isotopic mass dependence of the optical modes and ab initio calculations.
Anisotropic polarization of non‐polar GaN quantum dot emission
2009
We report on experimental and theoretical studies of the polarization selection rules of the emission of non-polar GaN/AlN self-assembled quantum dots. Time-integrated and time-resolved photoluminescence measurements have been performed to determine the degree of polarization. It is found that the emission of some samples can be predominantly polarized parallel to the wurtzite c axis, in striking difference with the previously reported results for bulk GaN and its heterostructures, in which the emission was preferentially polarized perpendicular to the c axis. Theoretical calculations based on an 8-band k·p model are used to analyze the relative importance of strain, confinement and quantum…
Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells
2009
The electronic structure of wurtzite semiconductor superlattices (SLs) and quantum wells (QWs) is calculated by using the empirical tight-binding method. The basis used consists of four orbitals per atom (sp3 model), and the calculations include the spin-orbit coupling as well as the strain and electric polarization effects. We focus our study on GaN/AlN QWs wells grown both in polar (C) and nonpolar (A) directions. The band structure, wave functions and optical absorption spectrum are obtained and compared for both cases.