Search results for " Figure"
showing 10 items of 102 documents
Cladding-Pumped Erbium/Ytterbium Co-Doped Fiber Amplifier for C-Band Operation in Optical Networks
2021
Space-division multiplexing (SDM) attracts attention to cladding-pumped optical amplifiers, but they suffer from a low pump power conversion efficiency. To address this issue, ytterbium (Yb3+) and erbium (Er3+) co-doping is considered as an effective approach. However, it changes the gain profile of Er3+-doped fiber amplifiers and induces the gain difference between optical wavelengths in the C-band, significantly limiting the effective band of the dense wavelength-division multiplexed (DWDM) system. This paper is devoted to a detailed study of a cladding-pumped Er3+/Yb3+ co-doped fiber amplifier (EYDFA) through numerical simulations aiming to identify a configuration, before assembling a s…
Enhanced thermoelectric properties of lightly Nb doped SrTiO3 thin films
2021
Novel thermoelectric materials developed for operation at room temperature must have similar or better performance along with being as ecofriendly as those commercially used, e.g., BiTe, in terms of their toxicity and cost. In this work, we present an in-depth study of the thermoelectric properties of epitaxial Nb-doped strontium titanate (SrTiNbO) thin films as a function of (i) doping concentration, (ii) film thickness and (iii) substrate type. The excellent crystal quality was confirmed by high resolution transmission electron microscopy and X-ray diffraction analysis. The thermoelectric properties were measured by the three-omega method (thermal conductivity) and van der Pauw method (el…
DC and 1/f noise characterization of cryogenically cooled pseudomorphic HEMT's
2002
Pseudomorphic (AlGaAs/InGaAs/GaAs) HEMT's have exhibited the best noise performance over the entire LF-to-microwave frequency range if compared to MESFET's and conventional GaAs HEMT's, due to either a reduced flicker noise, a lower G/R contribution and a smaller high-field diffusion noise. We have recently investigated the microwave (up to 18 GHz) noise properties of packaged pseudomorphic HEMT's from 290 K down to cryogenic temperature values. The current experimental work is aimed at extending such analysis to the LF noise range and at low temperatures. Cryogenic noise spectra (1 Hz to 100 KHz) and DC characteristics have therefore been recorded and the relevant observations on the devic…
An historical and morphological introduction to the wall of Piacenza
2013
The essay is articulated through a description of the urban morphology of the city of Piacenza, identifying the most important historical thresholds.
Lexical Aspect and Motion Event Encoding in Homeric Greek: A Case Study - poster
2017
Lexical Aspect and Motion Event Encoding in Homeric Greek: A Case Study This paper aims to investigate the role that lexical aspect (Aktionsart) plays in motion event encoding in Homeric Greek. In particular, the role of telicity as an inherent semantic property of the verb has been recently re-evaluated within the verbal system of early Indo-European languages (Bartolotta 2016). On the basis of textual analysis of the Iliad and the Odyssey, I will argue how Homeric Greek motion verbs appear to be compatible with the entailment of the arrival of the Figure to the Ground according to their inherent telicity (see Bartolotta forthcoming). Specifically, I will focus on the Homeric verbs for ̔ru…
Noise Figures of Merit of rf-SQUID-based Josephson Travelling Wave Parametric Amplifiers
2021
The characterization of the rf-SQUID-based JTWPA in terms of its noise figure and gain for different input states (Fock states or Coherent states) has been carried out. The spectral distribution of the noise temperature Tn and gain G presents a region where the amplifier has a relatively high gain with a thermal noise that can go beyond the standard quantum limit =ℏ/2 (valid only for single mode input states [44]) as shown in Fig. 3. The TWJPA is here biased in its 3WM regime and pumped at p = 12 GHz.
Langevin Approach to Understand the Noise of Microwave Transistors
2004
A Langevin approach to understand the noise of microwave devices is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. From the circuit network analysis, a stochastic integral equation for the output voltage is derived and from its power spectrum the noise figure as a function of the operating frequency is obtained. The theoretical results have been compared with experimental data obtained by the characterization of an HEMT transistor series (NE20283A, by NEC) from 6 to 18 GHz at a low noise bias point. The reported procedure exhibits good accuracy, within the typical uncertainty range of any experimental determin…
Advanced PSA Bipolar Transistors for Wireless Applications: Measurements of Scattering Parameters and Noise Figure
1994
A complete investigation on the performance of a series of double polysilicon self-aligned (PSA) bipolar transistors in terms of scattering parameters and noise figure is here reported. The devices have been characterized over the 1-4 GHz frequency range in several bias conditions to the aim of assessing the optimum bias values for the best trade-off between noise and gain performance. This is the first part of an extensive investigation currently performed on 5 families of PSA devices having different emitter configuration and size which have been manufactured by SGS-Thomson to undergo a comparative analysis on the global transistor performance.
A Method for Accurate Measurements of Optimum Noise Parameters of Microwave Transistors
1985
A method for measuring losses of the tuner network used as noise source admittance transformer in transistor noise parameter test-set is presented. Since the method is based on noise figure measurements, tuner losses can be determined on-line while performing measurements for determining transistor noise parameters. As experimental verifications the optimum noise parameters of a GaAs FET in the 4 - 12 GHz frequency range, measured through a computer-assisted measuring system, are reported.
Influence Of The Model Parameters On The Noise Performance Of Double-polysilicon BJTs For Microwave LNA's
1997
In the recent post we have measured the noise and the scattering parameters of several series of double polysilicon BJT's over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. From the experimental data, a noisy circuit model has been extracted based on a T-equivalent network. By means of the correlation matrix techniques, novel analytical expressions of the noise parameters have been derived. As a second step, a sensitivity analysis has been performed for evaluating the influence of each model element on the noise performance. The results show how to improve the characteristics of such devices for a better performance when employe…