Search results for " LED"

Social Franchising : A Bibliometric and Theoretic Review

2019

Author's accepted manuscript. This is an Accepted Manuscript of an article published by Taylor & Francis in Journal of Promotion Management on 07/03/2019, available online: http://www.tandfonline.com/10.1080/10496491.2019.1584777. We present a comprehensive review of social franchising literature and an integrated framework highlighting factors and theories driving the concept. Bibliometric and content analysis are used to analyze 111 articles between 2002 and 2018 from ISI Web of Science and Scopus. The following three research streams are identified: motivations for social franchising, how social franchising work, and impact of social franchising. These are integrated into a conceptual fr…

Zvaigžņotā Debess: 2018, Rudens (241)

2018

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and…

2020

The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence of InAlN superlattice underlayers (InAlN SL UL). The presence of the underlayer is found to remarkably increase the EL output power and the radiation tolerance of LEDs, which correlates with a much lower and more slowly changing density of deep traps in the QW region with radiation dose, and the higher lifetime of charge carriers, manifested by higher short-circuit current and open-circuit voltage in current–voltage characteristics under …

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

2020

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash

Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes

2015

We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting diode (LED) emitting at around 450 nm, and a spin-coated conversion layer making use of Lumogen® F Yellow 083. Under prolonged irradiation, the coating exhibits significant bleaching, thus degrading the color rendering performance of the LED. We present experimental results that confirm that the local temperature rise of the operating diode does not affect the conversion layer. It is also proven that, during the test, the photostability of the orga…

How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile

2021

Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both elec…

Tunable Eu2+ emission in KxNa1 − xLuS2 phosphors for white LED application

2016

Set of Eu2+-doped KxNa1 − xLuS2 phosphors (x = 0–1) in the form of transparent crystalline hexagonal platelets was successfully synthesized by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, X-ray fluorescence, time-resolved luminescence spectroscopy and electron paramagnetic resonance. Special attention was given to photoluminescence emission spectra under the 395 nm and 455 nm excitation aiming to obtain white emission with tunable color temperature. EPR method was employed to understand the Eu2+ incorporation and distribution in the KxNa1 − xLuS2 hosts. CIE xy-coordinates were calculated to compare effects o…

First InGaN/GaN thin Film LED using SiCOI engineered substrate

2006

InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…

InAlN underlayer for near ultraviolet InGaN based light emitting diodes

2019

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhibits a bandgap of 4.6 eV. This allows alleviating absorption issues in NUV LEDs. We demonstrate that the internal quantum efficiency of 405 nm single InGaN/GaN quantum well LEDs with InAlN UL is similar to 70% compared to less than 10% for LEDs without UL. Excellent I-V characteristics are achieved thanks to polarization charge screening with high doping level at the InAlN/GaN interface. (C) 2019 The Japan Society of Applied Physics

Influence of the Ce: YAG amount on structure and optical properties of Ce:YAG-PMMA composites for white LED

2016

Ce:YAG-poly(methyl methacrylate) (PMMA) composites were prepared by using a melt compounding method, adding several amounts of Ce:YAG in the range 0.1–5wt.%. The optical properties of the obtained composites and of the composites combined with a blue LED were measured to investigate the effect of the amount of Ce:YAG on the resulting emitted light in view of possible application in white LED manufacture. An increase in Ce:YAG amount caused an increase in the emission and a shift of 15 nm, influencing the white LED performance. The structure and morphology of the composites were studied. The results show that the interaction between the two components, observed by using solid state NMR exper…