Search results for " Memories"
showing 10 items of 30 documents
Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation
2012
Threshold voltage (V-th) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (gamma-and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to V-th variation and that the V-th loss and the variability can be modeled by a Weibull statistics with a shape parameter k similar to 2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the V-th loss distributio…
Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memori…
2006
We study the role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage. In fact, the capture mechanism of the silicon adatoms in the proximity of existing dots restricts the number of possible nucleation sites, the final dot size, and the dot position, thus driving the process toward partial self-order. We numerically evaluate the relative dispersion of surface coverage for several gate areas and compare the results to the fully random case. The coverage dispersion is related to the fluctuations from bit to bit of the threshold voltage window (Δ Vth) distribution of nanocrystal memories. The evaluations, com…
Memory cell structure integrated on semiconductor
2004
This invention relates to a memory cell Which comprises a capacitor having a ?rst electrode and a second electrode separated by a dielectric layer. Such dielectric layer com prises a layer of a semi-insulating material Which is fully enveloped by an insulating material and in Which an electric charge is permanently present or trapped therein. Such electric charge accumulated close to the ?rst or to the second electrode, depending on the electric ?eld betWeen the electrodes,therebyde?ningdifferentlogiclevels.
Distribution of the threshold voltage window in nanocrystal memories with Si dots formed by chemical vapor deposition: Effect of partial self-ordering
2004
Non volatile memories based on Si nanocrystals (Si-ncs) offer an important alternative to conventional floating gate devices, for the numerous potential advantages associated with the discrete-trap structures [1]. Isolated Si-ncs can be obtained by chemical vapor deposition (CVD) through a fully compatible CMOS process. So far, the main limitation for scaling the CVD Si-nc memories at sub-90 nm node is related to the expected fluctuation, from bit to bit, in the device threshold voltage (VTH), due to the spread in the sur- face fraction (Rdot) covered with Si dots [2]. The reason is the assumption that the dot position and the relative distance are fully random. It will be shown that the nu…
Ionizing radiation effects on Non Volatile Read Only Memory cells
2012
Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.
Being Moved by Unfamiliar Sad Music Is Associated with High Empathy
2016
The paradox of enjoying listening to music that evokes sadness is yet to be fully understood. Unlike prior studies that have explored potential explanations related to lyrics, memories, and mood regulation, we investigated the types of emotions induced by unfamiliar, instrumental sad music, and whether these responses are consistently associated with certain individual difference variables. One hundred and two participants were drawn from a representative sample to minimize self-selection bias. The results suggest that the emotional responses induced by unfamiliar sad music could be characterized in terms of three underlying factors: Relaxing sadness, Moving sadness, and Nervous sadness. Re…
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
2008
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.
Direct evidence of secondary recoiled nuclei from high energy protons
2008
The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions. © 2006 IEEE.
L'ape iblea dalla zagara all'edelweiss.Miscellanea per Giovanni Saverio Santangelo
2020
Il volume raccoglie testimonianze e scritti in memoria di Giovanni Saverio Santangelo, comparatista e francesista.
Autobiogrāfisko atmiņu par laulību dzimumatšķirības pēc laulības šķiršanas
2016
Pētījuma „Autobiogrāfisko atmiņu par laulību dzimumatšķirības pēc laulības šķiršanas” mērķis bija izpētīt autobiogrāfiskās atmiņas sievietēm un vīriešiem pēc laulības šķiršanas un atklāt, vai pastāv būtiskas atšķirības starp autobiogrāfiskajām atmiľām sievietēm un vīriešiem. Pētījumā piedalījās 60 respondenti, 30 sievietes un 30 vīrieši, kuriem ir šķirta laulība ar Latvijas Civillikuma Ģimenes tiesību daļas noteikumiem vai kuri ir laulības šķiršanas procesā, vecumā no 30 līdz 45 gadiem (M=38,13; SD= 4,47). Pētījumā piedalījās sievietes un vīrieši ar dažādu izglītības līmeni un dažādu nodarbinātību. Izlase tika veidota, pamatojoties uz respondentu pieejamību. Šī pētījuma veikšanai tika izman…