Search results for " OPT"

Raman characterization of Pb2Na1−xLaxNb5−xFexO15 and Pb0.5(5−x)LaxNb5−xFexO15 (0≤x≤1) solid solutions

2011

Abstract The ferroelectric compounds Pb 2 Na 1− x La x Nb 5− x Fe x O 15 and Pb 0.5(5− x ) La x Nb 5− x Fe x O 15 (0≤ x ≤1) with the tungsten bronze type structure have been investigated using Raman spectroscopy. The evolution of the spectra as a function of composition at room temperature is reported. In the frequency range 200–1000 cm −1 three main A 1 phonons around 240 ( υ 1 ), 630 ( υ 2 ) and 816 ( υ 3 ) cm −1 were observed. The broadening of the Raman lines for high values of x originates from a significant structural disorder. This is in good agreement with the relaxor character of these compositions. The lowest-frequency part of the spectra, below 180 cm −1 , reveals a structural ch…

Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

2019

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…

Partial discharge detection and localization along medium voltage cables

2017

In the last years different partial discharge (PD) measuring techniques have been developed because PD diagnostic is the most widely tool to evaluate the insulation condition of a power cable. Recently non-conventional methods and sensors have been used in order to reach improved results in PD measurements. The purpose of this work is to perform measurements that allow to study the variation of pulses when they travel along a MV cable and to locate the pulse source through the time arrival difference of the pulses obtained from two sensors installed separately.

2018

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…

Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…

Determination of refractive index of submicron-thick films using resonance shift in a four-layer slab waveguide

2017

The measurement of refractive index of very thin films at the order of ten to hundred nanometers is cumbersome and usually requires employing sophisticated techniques such as the spectral ellipsometry. In this paper we describe a simple contact method for measuring the refractive index of thin films. Here we have used the prism-coupling technique for characterizing samples prepared as four-layer slab waveguides. The waveguide resonance condition can be calculated by solving simple analytic transcendental equations for the slab waveguide. Then the captured mode position as a function of cladding thickness is used for probing the refractive index of cladding layer. We used indium-tin-oxide la…

Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors

2019

GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.

Integral imaging with Fourier-plane recording

2017

Integral Imaging is well known for its capability of recording both the spatial and the angular information of threedimensional (3D) scenes. Based on such an idea, the plenoptic concept has been developed in the past two decades, and therefore a new camera has been designed with the capacity of capturing the spatial-angular information with a single sensor and after a single shot. However, the classical plenoptic design presents two drawbacks, one is the oblique recording made by external microlenses. Other is loss of information due to diffraction effects. In this contribution report a change in the paradigm and propose the combination of telecentric architecture and Fourier-plane recordin…

Strain detection in non-magnetic steel by Kerr-microscopy of magnetic tracer layers

2018

Abstract For many applications of steel, e.g. for the evaluation of the fatigue state of components or structures, the characterization of the microscopic strain distribution in the material is important. We present a proof-of-principle for the visualization of such strain distributions by Kerr-microscopy of ferromagnetic tracer layers on nonmagnetic steel sheets. The influence of indentation induced strain on the magnetic domain pattern of 20 nm Galfenol and Permalloy tracer layers on austenitic AISI 904L steel sheets was investigated. The obtained Kerr-microscopy images show a characteristic domain pattern in the strained regions of the steel sheets, which is consistent with a dominant ma…