Search results for " Phase"
showing 10 items of 1862 documents
Alumina particle reinforced TiO2 composite films grown by direct liquid injection MOCVD
2014
Abstract The use of a liquid injection delivery system to form composite films containing nanoparticles was investigated. Al 2 O 3 –TiO 2 films were grown on silicon substrates by direct liquid injection MOCVD (DLI-MOCVD) at 400 °C. The α-Al 2 O 3 nanoparticles (α-Al 2 O 3 NPs) dispersed in TiO 2 films resulted from co-deposition using colloidal α-Al 2 O 3 solution and titanium tetraisopropoxide as titanium precursor. Scanning electron microscopy coupled with EDS as well as Raman spectroscopy confirmed the presence of α-Al 2 O 3 NPs aggregates embedded in the TiO 2 matrix. The liquid injection system coupled with CVD technique can be promising to form composite films containing preformed na…
Correlation Between the Electrical Properties and the Morphology of Low-Pressure MOCVD Titanium Oxynitride Thin Films Grown at Various Temperatures
2000
Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metal-organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450°C to 750°C, was investigated by scanning electron microscopy (SEM), and electrical DC measurements. Rutherford back-scattering (RBS) measurements were used to determine the N/O ratio in the films. The surface observations of the deposited films showed two morphological transitions. The resistivity decreased with the growth temperature, while the nitrogen content increased. Moreover, for the highest de…
First InGaN/GaN thin Film LED using SiCOI engineered substrate
2006
InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…
Initial stages of TiO2 thin films MOCVD growth studied by in situ surface analyses
2005
Abstract In situ chemical surface analyses using X-ray photoelectron spectroscopy (XPS) were performed to understand the initial stages of TiO 2 thin-film MOCVD growth. Deposits on Si (1 0 0), a few nanometres thick, were obtained at a fixed temperature of 650 °C and for two different pressures, 2.9 and 0.05 mbar, using titanium tetraisopropoxide (TTIP) as precursor. Pressure lowering led to a higher deposit growth rate. Reduction of titanium with respect to stoichiometric titanium dioxide and oxidation of the wet-cleaned silicon substrate are observed from decomposition of the Ti 2p and Si 2p peaks. The formation of a TiSi x O y mixed oxide is also pointed out and confirmed by the presence…
EPR study of Ce3+ luminescent centers in the Y2SiO5 single crystalline films
2017
Abstract The work reports results of EPR investigation of the Ce3+ incorporation in the Y2SiO5 and (Y,La)2SiO5 single crystalline films (SCFs), grown by liquid phase epitaxy method. The Ce3+ content determined from EPR spectra varied between 0.49 and 0.65 at. % in Y2SiO5 SCFs and strongly increased up to 1.9 at. % in (Y,La)2SiO5 SCF, suggesting a positive role of the La dopant in the incorporation of the Ce3+ ions into Y2SiO5 host. The EPR study showed the presence of only one type of Ce3+ centers (Ce1) corresponding to the localization of Ce3+ ions in the seven–fold coordinated positions of the Y2SiO5 host. No Ce2 center spectra (six-fold coordinated Ce3+ positions) were detected in films …
Lattice-Site-Specific Spin Dynamics in Double PerovskiteSr2CoOsO6
2014
Magnetic properties and spin dynamics have been studied for the structurally ordered double perovskite Sr2CoOsO6. Neutron diffraction, muon-spin relaxation, and ac-susceptibility measurements reveal two antiferromagnetic (AFM) phases on cooling from room temperature down to 2 K. In the first AFM phase, with transition temperature TN1=108 K, cobalt (3d7, S=3/2) and osmium (5d2, S=1) moments fluctuate dynamically, while their average effective moments undergo long-range order. In the second AFM phase below TN2=67 K, cobalt moments first become frozen and induce a noncollinear spin-canted AFM state, while dynamically fluctuating osmium moments are later frozen into a randomly canted state at…
Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…
2007
International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…
Anisotropic and non-heterogeneous continuum percolation in titanium oxynitride thin columnar films
2002
International audience; We report the percolation behaviour of the conductivity of titanium oxynitride films grown by low-pressure metal-organic chemical vapour deposition, composed of TiNxOy mixed with TiO2. The usual DC parameters (t, s and Φc), obtained from the effective media theory equations, are compared to the universal values (s = sun while t < tun because of the film anisotropy). This is the first example of an electrical continuum percolation applied to columnar films with chemically similar conducting and insulating units (non-heterogeneous percolation) whose mixing is based upon the growth temperature during the film growth.
Prediction of phase transformation of Ti-6Al-4V titanium alloy during hot-forging processes using a numerical model
2013
In this article numerical model for prediction of phase evolution of Ti-6Al-4V titanium alloy was presented. In particular, attention was focused on alpha to beta and beta to alpha+beta phase transformations. The analysis was conducted using a commercial implicit finite element method code, considering the data and the parameters of a real case study to check the quality of the numerical model. The alpha to beta transformation was developed using the simplified form of the Avrami model and the beta to alpha+beta transformation was controlled through the generalized Avrami model. The model so-thought has been used to conduct a 2D simulation of a forging process. A comparison between the num…
Supramolecular self-assembling in mesostructured materials through charge tuning in the inorganic phase
1998
Supramolecular self-assembling of organic CTA+ micelles and inorganic [VO(H2O)PO4]n^q-2 2D-anions for the isolation of hexagonal mesostructured materials can be reached by charge tuning in the inorganic phase through the adjustment of the vanadium mean oxidation state. El Haskouri, Jamal, Jamal.Haskouri@uv.es ; Cabrera Medina, Saul, Saul.Cabrera@uv.es ; Beltran Porter, Aurelio, Aurelio.Beltran@uv.es ; Alamo Serrano, Jaime, Jaime.Alamo@uv.es ; Beltran Porter, Daniel, Daniel.Beltran@uv.es ; Amoros del Toro, Pedro Jose, Pedro.Amoros@uv.es