Search results for " Radiation Effects"
showing 10 items of 34 documents
Variability of the Si-O-Si angle in amorphous-SiO2 probed by electron paramagnetic resonance and Raman spectroscopy
2009
We report an experimental investigation by electron paramagnetic resonance (EPR) and Raman spectroscopy on a variety of amorphous silicon dioxide materials. Our study by EPR have permitted us to point out that the splitting of the primary hyperfine doublet of the Eγ′ center shows a relevant sample-to-sample variability, changing from ∼41.8 to ∼42.6 mT in the set of materials we considered. The parallel study by Raman spectroscopy has enabled us to state that this variability is attributable to the different Si-O-Si angle characterizing the matrices of the different materials. © 2009 Elsevier B.V. All rights reserved.
Design of Radiation-Hardened Rare-Earth Doped Amplifiers through a Coupled Experiment/Simulation Approach
2013
International audience; We present an approach coupling a limited experimental number of tests with numerical simulations regarding the design of radiation-hardened (RH) rare earth (RE)-doped fiber amplifiers. Radiation tests are done on RE-doped fiber samples in order to measure and assess the values of the principal input parameters requested by the simulation tool based on particle swarm optimization (PSO) approach. The proposed simulation procedure is validated by comparing the calculation results with the measured degradations of two amplifiers made with standard and RH RE-doped optical fibers, respectively. After validation, the numerical code is used to theoretically investigate the …
Micro-Raman investigation of X or gamma irradiated Ge doped fibers
2011
International audience; Micro-Raman spectra have been recorded on Ge doped optical fibers before and after 10 keV-X or c-ray irradiation up to doses of 1 MGy (X-ray) or 7.8 MGy (-ray). Our data provide evidence that, at such dose levels, the glass matrix is not modified in a detectable way. We observed that varying the Ge doping levels from 0 to about 11 wt.%, X or radiation sensitivity of the overall matrix remains unchanged. Such results are observed for fibers obtained with drawing conditions within the usual range used for the fabrication of specialty fibers as radiation-tolerant waveguides. Our data support the potentiality of fiberbased sensors using glass properties, e.g. Raman sc…
Radiation Effects on Silica-Based Preforms and Optical Fibers - I: Experimental Study with Canonical Samples
2008
International audience; The influence of the F- and Ge-doping on the fiber radiation responses is investigated through online measurements of the UV-visible induced attenuation and spectroscopic studies (ESR, confocal microscopy of luminescence) on prototype samples
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
2018
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
2018
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation peerReviewed
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications
2016
An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…
Durcissement de matériaux pour l’optique et la photonique destinés à l’utilisation dans un environnement énergétique
2008
Influence du rayonnement X sur des fibres et préformes canoniques dopées au phosphore
2009
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed