Search results for " Semiconductor"

showing 10 items of 332 documents

Giant Spin Seebeck Effect through an Interface Organic Semiconductor

2019

Interfacing an organic semiconductor C60 with a non-magnetic metallic thin film (Cu or Pt) has created a novel heterostructure that is ferromagnetic at ambient temperature, while its interface with a magnetic metal (Fe or Co) can tune the anisotropic magnetic surface property of the material. Here, we demonstrate that sandwiching C60 in between a magnetic insulator (Y3Fe5O12: YIG) and a non-magnetic, strong spin-orbit metal (Pt) promotes highly efficient spin current transport via the thermally driven spin Seebeck effect (SSE). Experiments and first principles calculations consistently show that the presence of C60 reduces significantly the conductivity mismatch between YIG and Pt and the s…

Materials science530 PhysicsFOS: Physical sciences02 engineering and technologyApplied Physics (physics.app-ph)01 natural sciencesCondensed Matter::Materials Science0103 physical sciencesThermoelectric effectPhysics::Atomic and Molecular ClustersGeneral Materials ScienceElectrical and Electronic EngineeringThin film010306 general physicsAnisotropyCondensed matter physicsProcess Chemistry and TechnologyHeterojunctionPhysics - Applied Physics530 Physik021001 nanoscience & nanotechnologyOrganic semiconductorMagnetic anisotropyFerromagnetismMechanics of MaterialsSpin diffusion0210 nano-technology
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Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process

2016

A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl3 and (Et3Si)3As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD wind…

compound semiconductorsMaterials scienceAnnealing (metallurgy)Analytical chemistry02 engineering and technology010402 general chemistryEpitaxy01 natural sciencesArsenidelaw.inventionAtomic layer depositionchemistry.chemical_compoundGallium arsenideImpuritylawMaterials ChemistryThin filmCrystallizationta216ta116ta114General Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesAmorphous solidamorphous filmschemistry0210 nano-technologystoichiometric filmsJournal of Materials Chemistry C
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The enhancement of ferromagnetism in uniaxially stressed diluted magnetic semiconductors

2003

We predict a new mechanism of enhancement of ferromagnetic phase transition temperature $T_c$ in uniaxially stressed diluted magnetic semiconductors (DMS) of p-type. Our prediction is based on comparative studies of both Heisenberg (inherent to undistorted DMS with cubic lattice) and Ising (which can be applied to strongly enough stressed DMS) models in a random field approximation permitting to take into account the spatial inhomogeneity of spin-spin interaction. Our calculations of phase diagrams show that area of parameters for existence of DMS-ferromagnetism in Ising model is much larger than that in Heisenberg model.

Condensed Matter - Materials SciencePhase transition temperatureMaterials scienceCondensed matter physicsHeisenberg modelMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesDisordered Systems and Neural Networks (cond-mat.dis-nn)Magnetic semiconductorCondensed Matter - Disordered Systems and Neural NetworksCondensed Matter::Materials ScienceFerromagnetismLattice (order)Ising modelCondensed Matter::Strongly Correlated ElectronsComputer Science::DatabasesPhase diagram
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2015

Electrically detected magnetic resonance (EDMR) is a commonly used technique for the study of spin-dependent transport processes in semiconductor materials and electro-optical devices. Here, we present the design and implementation of a compact setup to measure EDMR, which is based on a commercially available benchtop electron paramagnetic resonance (EPR) spectrometer. The electrical detection part uses mostly off-the-shelf electrical components and is thus highly customizable. We present a characterization and calibration procedure for the instrument that allowed us to quantitatively reproduce results obtained on a silicon-based reference sample with a “large-scale” state-of-the-art instru…

Materials scienceSiliconSpectrometerbusiness.industrySemiconductor device fabricationAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementCharacterization (materials science)law.inventionOrganic semiconductorchemistryHardware_GENERALlawvisual_artElectronic componentvisual_art.visual_art_mediumCalibrationOptoelectronicsbusinessElectron paramagnetic resonanceAIP Advances
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Above-bandgap ordinary optical properties of GaSe single crystal

2009

We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-quality pseudodielectric function 〈ε(E)〉 = 〈ε1(E)〉+i〈ε2(E)〉 and pseudorefractive index 〈N(E)〉 = 〈n(E)〉+i〈k(E)〉 spectra were measured by spectroscopic ellipsometry from 0.73 to 6.45 eV at room temperature for the light polarization perpendicular to the optic axis (math⊥math). The 〈ε〉 spectrum exhibited several interband-transition critical-point structures. Analysis of second-energy derivatives calculated numerically from the measured data yielded the critical-point energy values. Carmen.Martinez-Tomas@uv.es

EllipsometryCondensed matter physicsChemistryBand gapUNESCO::FÍSICAGallium compoundsRefractive indexCritical points ; Dielectric function ; Ellipsometry ; Energy gap ; Gallium compounds ; III-VI semiconductors ; Refractive indexIII-VI semiconductorsPhysics::OpticsGeneral Physics and AstronomyCritical pointsDielectric functionPolarization (waves)Spectral lineEnergy gapOptical axis:FÍSICA [UNESCO]EllipsometryPerpendicularRefractive indexSingle crystalJournal of Applied Physics
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2017

The adsorption of molecular acceptors is a viable method for tuning the work function of metal electrodes. This, in turn, enables adjusting charge injection barriers between the electrode and organic semiconductors. Here, we demonstrate the potential of pyrene-tetraone (PyT) and its derivatives dibromopyrene-tetraone (Br-PyT) and dinitropyrene-tetraone (NO2-PyT) for modifying the electronic properties of Au(111) and Ag(111) surfaces. The systems are investigated by complementary theoretical and experimental approaches, including photoelectron spectroscopy, the X-ray standing wave technique, and density functional theory simulations. For some of the investigated interfaces the trends expecte…

ChemistryAnalytical chemistry02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesAcceptorSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsOrganic semiconductorGeneral EnergyX-ray photoelectron spectroscopyChemical physicsElectron affinity0103 physical sciencesMonolayerElectrodeDensity functional theoryWork functionPhysical and Theoretical Chemistry010306 general physics0210 nano-technologyThe Journal of Physical Chemistry C
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Self-Assembled Monolayer-Functionalized Half-Metallic Manganite for Molecular Spintronics

2012

(La,Sr)MnO(3) manganite (LSMO) has emerged as the standard ferromagnetic electrode in organic spintronic devices due to its highly spin-polarized character and air stability. Whereas organic semiconductors and polymers have been mainly envisaged to propagate spin information, self-assembled monolayers (SAMs) have been overlooked and should be considered as promising materials for molecular engineering of spintronic devices. Surprisingly, up to now the first key step of SAM grafting protocols over LSMO surface thin films is still missing. We report the grafting of dodecyl (C12P) and octadecyl (C18P) phosphonic acids over the LSMO half-metallic oxide. Alkylphosphonic acids form ordered self-a…

Materials scienceMacromolecular SubstancesSurface PropertiesMolecular ConformationGeneral Physics and AstronomyNanotechnology02 engineering and technology010402 general chemistry01 natural sciencesMaterials TestingMonolayerGeneral Materials ScienceParticle SizeThin filmMagnetite NanoparticlesAlkylchemistry.chemical_classificationSpintronicsGeneral EngineeringSelf-assembled monolayer021001 nanoscience & nanotechnologyManganite0104 chemical sciencesOrganic semiconductorSemiconductorschemistrySurface modificationSpin LabelsCrystallization0210 nano-technologyACS Nano
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Molecular semiconductor-doped insulator (MSDI) heterojunctions: Oligothiophene/bisphtalocyanine (LuPc2) and perylene/bisphthalocyanine as new structu…

2010

Abstract The combination of a sexithiophene and a perylene diimide derivatives, as p-type and n-type materials, respectively, used as sub-layers, to an intrinsic semiconductor, namely the lutetium bisphthalocyanine, allows to obtain a new transducer for gas sensing. These transducers were called molecular semiconductor-doped insulator (MSDI) heterojunctions, were recently designed and reported, but with only phthalocyanines as active materials. p-Type material leads to MSDIs that exhibit a positive response to ozone and a negative response to ammonia, whereas MSDIs prepared from n-type material exhibit a positive response to ammonia and negative response to ozone. The remarkable point is th…

Materials scienceIntrinsic semiconductorbusiness.industryDopingMetals and Alloyschemistry.chemical_elementHeterojunctionInsulator (electricity)Condensed Matter PhysicsLutetiumSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistry.chemical_compoundTransducerchemistryDiimideMaterials ChemistryOptoelectronicsElectrical and Electronic EngineeringbusinessInstrumentationPeryleneSensors and Actuators B: Chemical
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German-Wide Interlaboratory Study Compares Consistency, Accuracy and Reproducibility of Whole-Genome Short Read Sequencing.

2020

We compared the consistency, accuracy and reproducibility of next-generation short read sequencing between ten laboratories involved in food safety (research institutes, state laboratories, universities and companies) from Germany and Austria. Participants were asked to sequence six DNA samples of three bacterial species (Campylobacter jejuni, Listeria monocytogenes and Salmonella enterica) in duplicate, according to their routine in-house sequencing protocol. Four different types of Illumina sequencing platforms (MiSeq, NextSeq, iSeq, NovaSeq) and one Ion Torrent sequencing instrument (S5) were involved in the study. Sequence quality parameters were determined for all data sets and central…

Microbiology (medical)Whole genome sequencing0303 health sciencesReproducibilityinterlaboratory study030306 microbiologylcsh:QR1-502Computational biologyIon semiconductor sequencingBiologyMicrobiologyGenomeion torrentlcsh:Microbiology03 medical and health sciencesfood safetyConsistency (statistics)whole-genome sequencingData qualityilluminaBase callingIllumina dye sequencing030304 developmental biologyFrontiers in microbiology
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Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Nuclear and High Energy PhysicsMaterials scienceSchottky barrierschottky diodesmodelling (creation related to information)01 natural sciencesElectronic mailIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundsilicon carbide0103 physical sciencesSilicon carbideElectrical and Electronic Engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsDiode010302 applied physicsta114010308 nuclear & particles physicsbusiness.industrydiodesSchottky diodesiliconmodelingradiationNuclear Energy and EngineeringchemistryionsOptoelectronicsbusinession radiation effectsVoltageIEEE Transactions on Nuclear Science
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