Search results for " Si"
showing 10 items of 26616 documents
3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process
2019
Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.
Mathematical modelling of the feed rod shape in floating zone silicon crystal growth
2017
Abstract A three-dimensional (3D) transient multi-physical model of the feed rod melting in the floating zone (FZ) silicon single-crystal growth process is presented. Coupled temperature, electromagnetic (EM), and melt film simulations are performed for a 4 inch FZ system, and the time evolution of the open melting front is studied. The 3D model uses phase boundaries and parameters from a converged solution of a quasi-stationary axisymmetric (2D) model of the FZ system as initial conditions for the time dependent simulations. A parameter study with different feed rod rotation, crystal pull rates and widths of the inductor main slit is carried out to analyse their influence on the evolution …
Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity
2016
This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.
Application of enthalpy model for floating zone silicon crystal growth
2017
Abstract A 2D simplified crystal growth model based on the enthalpy method and coupled with a low-frequency harmonic electromagnetic model is developed to simulate the silicon crystal growth near the external triple point (ETP) and crystal melting on the open melting front of a polycrystalline feed rod in FZ crystal growth systems. Simulations of the crystal growth near the ETP show significant influence of the inhomogeneities of the EM power distribution on the crystal growth rate for a 4 in floating zone (FZ) system. The generated growth rate fluctuations are shown to be larger in the system with higher crystal pull rate. Simulations of crystal melting on the open melting front of the pol…
Experimental and numerical investigation of laboratory crystal growth furnace for the development of model-based control of CZ process
2019
Abstract The presented study is focused on laboratory Czochralski crystal growth experiments and their mathematical modelling. The developed small-scale CZ crystal growth furnace is described as well as the involved automation systems: crystal radius detection by image recognition, temperature sensors, adjustable heater power and crystal pull rate. The CZ-Trans program is used to model the experimental results – transient, 2D axisymmetric simulation software primarily used for modelling of the industrial-scale silicon crystal growth process. Poor agreement with the experimental results is reached; however, the proven ability to perform affordable, small-scale experiments and successfully mo…
State-space formulation of scalar Preisach hysteresis model for rapid computation in time domain
2015
A state-space formulation of classical scalar Preisach model (CSPM) of hysteresis is proposed. The introduced state dynamics and memory interface allow to use the state equation, which is rapid in calculation, instead of the original Preisach equation. The main benefit of the proposed modeling approach is the reduced computational effort which requires only a single integration over the instantaneous line segment in the Preisach plane. Numerical evaluations of the computation time and model accuracy are provided in comparison to the CSPM which is taken as a reference model.
Development, Characterization, and Testing of a SiC-Based Material for Flow Channel Inserts in High-Temperature DCLL Blankets
2018
This work has been carried out within the framework of the EUROfusion Consortium. The views and opinions expressed herein do not necessarily reflect those of the European Commission.
Single crystal-like thin films of blue bronze
2021
Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 O 3 (1-102) and S r T i O 3 (510) substrates. Structural and imaging characterization revealed good quality films with well oriented grains of few microns in length. Both non-selective (transport) and order-selective (femtosecond pump-probe spectroscopy) probes revealed charge density wave properties that are very close to those of the single crystals. The films exhibit metal-semiconductor phase transition in resistivity, pump-probe data show phase transition at the same temperature as the single crystal and the threshold for the photo-induced phase transition is approximately the same as in…
On asymmetric periodic solutions in relay feedback systems
2021
Abstract Asymmetric self-excited periodic motions or periodic solutions which are produced by relay feedback systems that have symmetric characteristics are studied in the paper. Two different mechanisms of producing an asymmetric oscillation by a system with symmetric properties are noted and analyzed by the locus of a perturbed relay system (LPRS) method. Bifurcation between the ability to excite symmetric and asymmetric oscillation with variation of system parameters is analyzed. An algorithm of finding asymmetric solutions is proposed.
Simulations on time-of-flight ERDA spectrometer performance
2016
The performance of a time-of-flight spectrometer consisting of two timing detectors and an ionization chamber energy detector has been studied using Monte Carlo simulations for the recoil creation and ion transport in the sample and detectors. The ionization chamber pulses have been calculated using Shockley-Ramo theorem and the pulse processing of a digitizing data acquisition setup has been modeled. Complete time-of-flight–energy histograms were simulated under realistic experimental conditions. The simulations were used to study instrumentation related effects in coincidence timing and position sensitivity, such as background in time-of-flight–energy histograms. Corresponding measurement…