Search results for " conductivity"

showing 10 items of 794 documents

Fine tuning of thermoelectric performance in phase-separated half-Heusler compounds

2015

Two successful recipes to enhance the thermoelectric performance, namely carrier concentration optimization and reduction of thermal conductivity, have been combined and applied to the p-type (Ti/Zr/Hf)CoSb1−xSnx system. An intrinsic micrometer-scale phase separation increases the phonon scattering and reduces the lattice thermal conductivity. A substitution of 15% Sb by Sn optimizes the electronic properties. Starting from this, further improvement of the thermoelectric properties has been achieved by a fine tuning of the Ti to Hf ratio. The microstructuring of the samples was studied in detail with high-resolution synchrotron powder X-ray diffraction and element mapping electron microscop…

DiffractionFine-tuningMaterials sciencePhonon scatteringbusiness.industryGeneral ChemistryThermoelectric materialsSynchrotronlaw.inventionThermal conductivitylawPhase (matter)Thermoelectric effectMaterials ChemistryOptoelectronicsbusinessJournal of Materials Chemistry C
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Epitaxial growth and thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films

2011

Abstract Due to their exceptional thermoelectric properties Half-Heusler alloys like MNiSn (M = Ti,Zr,Hf) have moved into focus. The growth of single crystalline thin film TiNiSn and Zr 0.5 Hf 0.5 NiSn by dc magnetron sputtering is reported. Seebeck and resistivity measurements were performed and their dependence on epitaxial quality is shown. Seebeck coefficient, specific resistivity and power factor for Zr 0.5 Hf 0.5 NiSn at room temperature were measured to be 63 μV K − 1 , 14.1 μΩ m and 0.28 mW K − 2  m − 1 , respectively. Multilayers of TiNiSn and Zr 0.5 Hf 0.5 NiSn are promising candidates to increase the thermoelectric figure-of-merit by decreasing thermal conductivity perpendicular …

DiffractionMaterials scienceCondensed matter physicsMetals and AlloysSurfaces and InterfacesSputter depositionEpitaxySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsThermal conductivityElectrical resistivity and conductivitySeebeck coefficientThermoelectric effectMaterials ChemistryThin filmThin Solid Films
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Electric and dielectric properties of nanostructured stoichiometric and excess-iron Ni–Zn ferrites

2013

In this paper, we report a study of the effect of excess iron on structural, microstructural, electric and dielectric properties of the nanostructured Ni–Zn ferrites Ni1−xZnxFe2+zO4−δ of different compositions with x = 0, 0.3, 0.5, 0.7, 1 and z = 0, 0.1. The structural and microstructural properties are estimated from x-ray diffraction and atomic force microscopy (AFM) data. The average grain size, evaluated from AFM topographical analysis, is found to be below 70 nm. The samples exhibit low values of dielectric constant and dielectric loss and a high resistivity. Contrary to earlier conclusions regarding microstructured Ni–Zn ferrites, in nanostructured Ni–Zn ferrites sintered at relativel…

DiffractionMaterials scienceElectrical resistivity and conductivityAtomic force microscopyAnalytical chemistryDissipation factorDielectric lossDielectricCondensed Matter PhysicsMathematical PhysicsAtomic and Molecular Physics and OpticsStoichiometryGrain sizePhysica Scripta
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Optimization of thermal coefficient of electrical resistivity of Co-Ti-Si thin films due to laser-induced chemical reactions

2001

The CO2 laser induced optimization of the thermal coefficient of electrical resistivity in Co-Ti-Si thin films is realized. The X-ray diffraction studies of the annealed Co- Ti-Si films confirm that the changes of electrical properties are related to forming a small structure of crystalline compounds Ti5Si3 and CoSi2 in an amorphous matrix.

DiffractionMaterials scienceSiliconAnnealing (metallurgy)Analytical chemistrychemistry.chemical_elementLaserlaw.inventionCondensed Matter::Materials ScienceCarbon filmchemistryElectrical resistivity and conductivitylawX-ray crystallographyThin filmFourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
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Order-disorder evolution in solid solutions of the NLO material KTiOPO : K Rb TiOPO and K Rb TiOPO in the temperature range 293-973 K

2000

K0.88Rb0.12TiOPO4 and K0.465Rb0.535TiOPO4 solid solutions of the potassium titanyl phosphate (KTiOPO4, space group Pna21) family, are described at 293, 473, 673, 873 and at 973 K. Their high resolution structures are obtained by using accurate single-crystal X-ray diffraction techniques at high resolution, (sin A-1. Large anharmonic motion of alkaline ions increasing with temperature allows the evolution of the rubidium and potassium ions repartition in the two alkaline sites versus temperature. To describe this motion inducing ionic conductivity phenomenon and to determine accurately the order-disorder evolution, two alkaline site refinement models are developed and discussed. A thermodyna…

DiffractionMaterials scienceSolid-state physicsAnharmonicityAnalytical chemistrychemistry.chemical_elementAtmospheric temperature rangeCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsIonRubidiumchemistryIonic conductivitySolid solutionThe European Physical Journal B
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Thermal conductivity of half-Heusler superlattices

2014

Thin films and superlattices (SLs) of TiNiSn and ZrHfNiSn layers have been grown by dc magnetron sputtering on MgO (100) substrates to reduce the thermal conductivity, aiming for improvement of the thermoelectric figure of merit ZT. The thermal conductivity of 1 Wm−1K−1 was measured by the differential 3ω method for an SL with a periodicity of 8.8 nm. In addition to x-ray diffraction analysis of the SL crystal structure, smooth interfaces were confirmed by scanning/transmission electron microscopy.

DiffractionMaterials sciencebusiness.industrySuperlatticeCrystal structureSputter depositionCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsThermoelectric figure of meritThermal conductivityTransmission electron microscopyMaterials ChemistryOptoelectronicsElectrical and Electronic EngineeringThin filmbusinessSemiconductor Science and Technology
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LiCrO2 Under Pressure: In-Situ Structural and Vibrational Studies

2018

The high-pressure behaviour of LiCrO2, a compound isostructural to the battery compound LiCoO2, has been investigated by synchrotron-based angle-dispersive X-ray powder diffraction, Raman spectroscopy, and resistance measurements up to 41, 30, and 10 Gpa, respectively. The stability of the layered structured compound on a triangular lattice with R-3m space group is confirmed in all three measurements up to the highest pressure reached. The dependence of lattice parameters and unit-cell volume with pressure has been determined from the structural refinements of X-ray diffraction patterns that are used to extract the axial compressibilities and bulk modulus by means of Birch&ndash

DiffractionMaterials sciencehigh-pressureHigh-pressureGeneral Chemical EngineeringThermodynamics02 engineering and technology01 natural sciencesInorganic Chemistrysymbols.namesakeElectrical resistance and conductanceElectrical resistivity and conductivity0103 physical scienceslcsh:QD901-999General Materials ScienceHexagonal lattice010306 general physicsequation of stateBulk modulusEquation of state021001 nanoscience & nanotechnologyCondensed Matter PhysicsX-ray diffractionX-ray crystallographyhigh-pressure; X-ray diffraction; Raman spectroscopy; equation of stateRaman spectroscopysymbolslcsh:Crystallography0210 nano-technologyRaman spectroscopyPowder diffraction
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Giant conductivity enhancement: Pressure-induced semiconductor-metal phase transition in Cd0.90Zn0.1Te

2019

Element doping and pressure compression may change material properties for improved performance in applications. We report pressure-induced metallization in the semiconductor $\mathrm{C}{\mathrm{d}}_{0.90}\mathrm{Z}{\mathrm{n}}_{0.1}\mathrm{Te}$. Transport measurements showed an overall resistivity drop of 11 orders of magnitude under compression up to 12 GPa, which is indicative of a metallization transition. X-ray diffraction measurements revealed that the sample underwent a structural transition from a cubic-$F4\overline{3}m$ phase (zinc blende) to a cubic-$Fm\overline{3}m$ phase (rock salt) at about 5.5 GPa, followed by another transition to an orthorhombic $Cmcm$ structure at 13 GPa. A…

DiffractionPhase transitionMaterials scienceCondensed matter physicsDoping02 engineering and technologyConductivity021001 nanoscience & nanotechnology01 natural sciencesCondensed Matter::Materials Sciencesymbols.namesakeElectrical resistivity and conductivity0103 physical sciencessymbolsOrthorhombic crystal system010306 general physics0210 nano-technologyElectronic band structureRaman spectroscopyPhysical Review B
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Modified YBCO superconductor-ferroelectric composites: Bulk materials and thick films

1996

Bulk samples and 50–125 μm thick films of (1-x)YBa2Cu3O7−δ-xBaTiO3 (0⩽x⩽0.12 by weight) composites have been synthesized, the films being obtained by Stokes sedimentation on SrTiO3 ceramic plates and firing in oxygen by Melt Textured Growth techniques. The phase composition and texture have been studied by X-ray diffraction and microstructure. Resistance and magnetic susceptibility of prepared samples have been measured.

DiffractionSuperconductivityMaterials scienceCondensed Matter PhysicsMicrostructureFerroelectricityMagnetic susceptibilityAtomic and Molecular Physics and OpticsElectrical resistivity and conductivityvisual_artvisual_art.visual_art_mediumGeneral Materials ScienceCeramicTexture (crystalline)Composite materialJournal of Low Temperature Physics
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Pressure-restored superconductivity in Cu-substituted FeSe

2011

Copper doping of FeSe destroys its superconductivity at ambient pressure, even at low doping levels. Here we report the pressure-dependent transport and structural properties of Fe${}_{1.01\ensuremath{-}x}$Cu${}_{x}$Se with 3$%$ and 4$%$ Cu doping and find that the superconductivity is restored. Metallic resistivity behavior, absent in Cu-doped FeSe, is also restored. At the low pressure of 1.5 GPa, superconductivity is seen at 6 K for 4$%$ Cu doping, somewhat lower than the 8 K ${T}_{c}$ of undoped FeSe. ${T}_{c}$ reaches its maximum of 31.3 K at 7.8 GPa, lower than the maximum superconducting temperature in the undoped material under pressure (${T}_{c}$ max of 37 K) but still very high. X…

DiffractionSuperconductivityMaterials scienceCondensed matter physicsDopingCondensed Matter PhysicsCopper dopingElectronic Optical and Magnetic MaterialsMetalLattice constantElectrical resistivity and conductivityvisual_artvisual_art.visual_art_mediumAmbient pressurePhysical Review B
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