Search results for " semiconductor"

showing 10 items of 332 documents

Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes

2018

Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation peerReviewed

mallintaminenpower semiconductor devicesionitsilicon carbidepuolijohteetionisoiva säteilySchottky diodesmodelingion radiation effects
researchProduct

A cross‐sectional, multi‐center study on treatment of facial acne scars with low‐energy double‐pass 1450‐nm diode laser

2020

Acne scars are the ultimate outcome of acne vulgaris, a prevalent skin disorder affecting the pilo-sebaceous unit. Laser resurfacing has been demonstrated to be an efficient therapy option for acne scars. Hence, we adopted this concept and conducted a study to evaluate the safety and efficacy of low-energy double-pass 1450-nm diode laser on acne scars. This study was conducted on 48 patients with acne scars, treated at 4-week interval with low-energy double-pass 1450-nm diode laser. Patients were evaluated clinically and with photographs, at day 0, first month and third month post the final treatment and during follow-up visit. Five treatment sessions were completed by all patients. Approxi…

medicine.medical_specialtyDermatologyDouble passlaw.inventionCicatrix030207 dermatology & venereal diseases03 medical and health sciences0302 clinical medicineLow energylawAcne VulgarisHumansMedicineAcne scarsAcnebusiness.industryLaser treatmentGeneral MedicineLasermedicine.diseaseHyperpigmentationDermatologyCross-Sectional StudiesTreatment Outcome030220 oncology & carcinogenesisMulti center studyLaser TherapyLasers Semiconductormedicine.symptombusinessDermatologic Therapy
researchProduct

Efficiency of concentration photovoltaic cells governed by luminescence processes

2013

The development of multi-junctions III-V semiconductors solar cells, that combine high conversion efficiency (over 40%) and capability of working under high illumination intensity (up to 1000 suns), has stimulated a rapid growth of concentrating photovoltaic (CPV) technology. The performance of these cells is based on the matching between the semiconductors band gap and the solar spectrum so as to optimize the current balancing between the subcells. This requirement is also important in connection with the CPV modules using lenses, mirrors, optical coupling compounds that introduce a wavelength dependent response to the sunlight. Therefore, care must be exercised in designing optimum cells …

multi-junctions solar cellUV-Visible Down conversionIII-V semiconductorConcentarting photovoltaic
researchProduct

Síntesis y caracterización de compuestos de Cu(II) con derivados triazólicos. Estudio de su actividad como potenciales nucleasas químicas

2014

The main goal of this PhD thesis concerns the development of artificial metallonucleases based on copper(II)-1,2,4-triazole compounds. In order to do so, we have obtained metal compounds of different nuclearities by reaction of a new family of 1,2,4-triazole ligands with copper(II) salts. The ligands own the characteristic triazole properties upon coordinating to metals and also integrate DNA binding units (aromatic moieties) with the aim of increasing the affinity of the corresponding metal complexes to double strand DNA. We have also chosen the copper(II) ion due to its intrinsic redox and coordination properties. Here we present our conclusions in relation with their structure/activity a…

nanopartículas semiconductorasmetalonucleasas de cobrenucleasas oxidativasUNESCO::QUÍMICAeducationnucleasas hidrolíticasquantum dots:QUÍMICA [UNESCO]triazoleshealth care economics and organizationscompuestos de coordinación
researchProduct

Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

2018

The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The…

optical propertiescrystal structureMaterials scienceSiliconta221Analytical chemistrychemistry.chemical_element02 engineering and technologyoptiset ominaisuudet01 natural sciencespiezoelectric filmsAtomic layer depositionCrystallinityImpurity0103 physical sciencesWaferta216010302 applied physicsta114Plasma activationWide-bandgap semiconductorSurfaces and InterfacesPlasmaatomikerroskasvatus021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and Filmsdermatologychemistryatomic layer deposition0210 nano-technologyJournal of Vacuum Science and Technology A
researchProduct

Blue Emitting Organic Light Emitting Diodes

2019

Organic light emitting diodes (OLEDs) [1] can be fabricated on a range of materials such as glass, silicon or flexible plastic substrates. This can be exploited for the realization of integrated OLED-based fluorescence chemical sensors [2] and microfluidic systems [3] for application in areas such as biotechnology, life sciences, pharmaceuticals, public health and defense. These devices hold promises to be cost effective, ultra-compact (including the possibility to be fabricated into large bidimensional arrays), and capable to handle smaller sample volumes in order to achieve high throughput. Blue light is advantageous because it is strongly absorbed by most sensing molecules attached to bi…

organic materials and devices organic semiconductors organic ligth emitting diodesSettore ING-INF/01 - Elettronica
researchProduct

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed

power semiconductor devicesmallintaminenpiiionitsilicon carbideschottky diodesmodelingdioditsäteilyion radiation effects
researchProduct

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

2016

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed

silicon carbide (SiC)Materials scienceAnnealing (metallurgy)Schottky barrierSchottky diodesMetal–semiconductor junction01 natural sciencesTemperature measurementpower semiconductor deviceschemistry.chemical_compoundstomatognathic system0103 physical sciencesSilicon carbidecurrent-voltage characteristicsElectrical and Electronic EngineeringSafety Risk Reliability and QualityDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodemodelingElectronic Optical and Magnetic MaterialschemistryOptoelectronicsbusinession radiation effectsVoltageIEEE Transactions on Device and Materials Reliability
researchProduct

Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

2020

The suitability of Ti as a band gap modifier for &alpha

solar-blind detectionlaajakaistaiset puolijohteetalloyingBand gaplcsh:Mechanical engineering and machineryAnalytical chemistryCorundum02 engineering and technologyengineering.material7. Clean energy01 natural sciencesArticlegallium oxideCrystallinityAtomic layer depositionpuolijohteet0103 physical scienceslcsh:TJ1-1570Electrical and Electronic EngineeringThin filmQCgallium010302 applied physicsCondensed Matter - Materials Sciencewide band gap semiconductorsMechanical EngineeringWide-bandgap semiconductorPhysics - Applied Physicsatomikerroskasvatus021001 nanoscience & nanotechnologybandgapAmorphous solidthin filmstitaaniControl and Systems Engineeringatomic layer depositiongalliumoksidiengineeringSapphireohutkalvotddc:6200210 nano-technology
researchProduct

Ultrafast Coherent THz Lattice Dynamics Coupled to Spins in the van der Waals Antiferromagnet FePS3

2022

Coherent THz optical lattice and hybridized phonon–magnon modes are triggered by femtosecond laser pulses in the antiferromagnetic van der Waals semiconductor FePS3. The laser-driven lattice and spin dynamics are investigated in a bulk crystal as well as in a 380 nm-thick exfoliated flake as a function of the excitation photon energy, sample temperature and applied magnetic field. The pump-probe magneto-optical measurements reveal that the amplitude of a coherent phonon mode oscillating at 3.2 THz decreases as the sample is heated up to the Néel temperature. This signal eventually vanishes as the phase transition to the paramagnetic phase occurs, thus revealing its connection to the long-ra…

spintronicsSemiconductorsMechanics of MaterialsMechanical EngineeringGeneral Materials Scienceddc:530antiferromagnets2D materialsphononMaterialsmagnonultrafast pump-probe spectroscopyvan der Waals semiconductors
researchProduct