Search results for " silicon"
showing 10 items of 247 documents
ZnO Nanoestructured Layers Processing with Morphology Control by Pulsed Electrodeposition
2011
The fabrication of nanostructured ZnO thin films is a critic process for a lot of applications of this semiconductor material. The final properties of this film depend fundamentally of the morphology of the sintered layer. In this paper a process is presented for the fabrication of ZnO nanostructured layers with morphology control by pulsed electrodeposition over ITO. Process optimization is achieved by pulsed electrodeposition and results are assessed after a careful characterization of both morphology and electrical properties. SEM is used for nucleation analysis on pulsed deposited samples. Optical properties like transmission spectra and Indirect Optical Band Gap are used to evaluate th…
Polymer/metal hybrid multilayers modified Schottky devices
2013
Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1-5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers …
A two-component model for the 2260cm−1 infrared absorption band in electron irradiated amorphous SiO2
2011
Abstract We report an experimental study by infrared absorption (IR) measurements focused on the effects of electron irradiation in the dose range from 1.2 × 10 3 kGy to 5 × 10 6 kGy on the intrinsic band peaked at 2260 cm − 1 in amorphous silicon dioxide (a-SiO 2 ) materials. This IR band is particularly relevant as it is assigned to an overtone of the strong asymmetric stretching vibration of Si–O–Si bridges and consequently it is intimately related to the Si–O–Si bond angle distribution. In a recent work we have shown that structural modifications induced by irradiation take place through the nucleation of confined high-defective and densified regions statistically dispersed into the w…
Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation
2013
An innovative method for Si nanostructures (NS) fabrication is proposed, through nanosecond laser irradiation (lambda = 532 nm) of thin Si film (120 nm) on quartz. Varying the laser energy fluences (425-1130 mJ/cm(2)) distinct morphologies of Si NS appear, going from interconnected structures to isolated clusters. Film breaking occurs through a laser-induced dewetting process. Raman scattering is enhanced in all the obtained Si NS, with the largest enhancement in interconnected Si structures, pointing out an increased trapping of light due to multiple scattering. The reported method is fast, scalable and cheap, and can be applied for light management in photovoltaics. (C) 2013 AIP Publishin…
Numerical study and comparisons with experimental data for transient behaviour of phase boundaries during industrial FZ process for silicon crystal g…
2005
Abstract In our numerical transient model developed previously for the industrial FZ crystal growth process with the needle-eye technique, the meshing algorithms are essentially improved and a significant amount of numerical studies are carried out for model verification. Transient modelling for the experimental growth process with step-like time dependences of inductor current and feed rod velocity has shown that time dependencies of the crystal radius and zone height calculated numerically agree with the data from praxis. The fully transient simulation for growth process of crystal starting cone has shown that the model is capable of performing the simulation even if the crystal diameter …
Some aspects of pulsed laser deposition of Si nanocrystalline films
2009
International audience; Nanocrystalline silicon films were deposited by a picosecond laser ablation on different substrates in vacuum at room temperature. A nanocrystalline structure of the films was evidenced by atomic force microscopy (AFM), optical and Raman spectroscopies. A blue shift of the absorption edge was observed in optical absorption spectra, and a decrease of the optical phonon energy at the Brillouin zone centre was detected by Raman scattering. Early stages of nanocrystalline film formation on mica and HOPG substrates were studied by AFM. Mechanism of nanocrystal growth on substrate is discussed.
A LiDAR Prototype with Silicon Photomultiplier and MEMS Mirrors
2018
In this paper, we present a low cost prototype of a Time-Of-Flight (TOF) LiDAR system, employing a SiPM as photo detector and MEMS mirrors in order to steer the nanosecond pulsed optical beam with a scanning angle of +/-6°. Preliminary TOF measurements have been performed both indoor and outdoor to test the limits of the system.
The problem of spatial homogeneity in an LCoS projector
2019
Abstract Video projectors allow interesting applications in vision sciences since they provide a large projection area. We have colorimetrically characterized a LCoS projector using a mathematical model requiring additivity and constancy of the primaries -a sigmoid function in our case. Significant differences in chromaticity in the CIELAB space, but not in lightness, were found between the center and the corners of the screen. The lack of spatial homogeneity led us to estimate the parameters of the model as a function of spatial position, using different strategies. The best result was obtained by interpolating the values of the parameters of the model determined from experimental measurem…
TREATMENT OF PERSISTENTLY OPEN MACULAR HOLES WITH HEAVY SILICONE OIL (DENSIRON 68) VERSUS C2F6. A PROSPECTIVE RANDOMIZED STUDY
2016
Abstract PURPOSE: To compare the efficacy of a mixture of silicone oil and perfluorohexyloctane (Densiron 68) with C2F6 gas endotamponade in the retreatment of persistently open full-thickness macular holes. METHODS: In this prospective randomized study, 21 consecutive patients who were unsuccessfully operated on for large idiopathic full-thickness macular hole were randomly assigned to undergo a second vitrectomy with 20% perfluoroethane gas (C2F6, Group A) or with Densiron 68 tamponade (Group B). PRIMARY OUTCOMES: Endpoint (12 months) full-thickness macular hole closure rate by spectral domain optical coherence tomography and logMAR corrected distance visual acuity. SECONDARY OUTCOMES: po…
Light absorption and electrical transport in Si:O alloys for photovoltaics
2010
Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was …