Search results for "Amorphous silicon"
showing 10 items of 43 documents
High-efficiency silicon-compatible photodetectors based on Ge quantum dots
2011
We report on high responsivity, broadband metal/insulator/semiconductor photodetectors with amorphous Ge quantum dots (a-Ge QDs) as the active absorbers embedded in a silicon dioxide matrix. Spectral responsivities between 1-4 A/W are achieved in the 500-900 nm wavelength range with internal quantum efficiencies (IQEs) as high as ∼700%. We investigate the role of a-Ge QDs in the photocurrent generation and explain the high IQE as a result of transport mechanisms via photoexcited QDs. These results suggest that a-Ge QDs are promising for high-performance integrated optoelectronic devices that are fully compatible with silicon technology in terms of fabrication and thermal budget. © 2011 Amer…
Plasmonic modes in molybdenum ultra-thin films suitable for hydrogenated amorphous silicon thin film solar cells
2014
We have recently demonstrated that molybdenum ultra-thin films interposed between hydrogenated amorphous silicon (a-Si:H) and SnO2:F transparent conductive oxide (TCO) in thin film solar cells show light trapping effects which enhance the solar cells performances. The effect of this improvement may be attributed to surface plasmon polariton (SPP) modes excited at the molybdenum interface by the solar radiation. In this paper we show direct evidence of such SPP modes in the case of the molybdenum/air interface by using the attenuated total reflection (ATR) technique, pioneered by Kretschmann, and we evaluate the dielectric constant of molybdenum at 660 nm. (C) 2013 The Authors. Published by …
Three-dimensional photonic crystal intermediate reflectors for enhanced light-trapping in tandem solar cells
2011
A three-dimensional photonic crystal intermediate reflector for enhanced light trapping in tandem solar cells is presented. The intermediate reflector consists of a transparent and conductive ZnO:Al inverted opal sandwiched in between the top amorphous silicon and bottom microcrystalline silicon cell.
Amorphous Silicon Nanotubes via Galvanic Displacement Deposition
2013
Amorphous silicon nanotubes were grown in a single step into a polycarbonate membrane by a galvanic displacement reaction conducted in aqueous solution. In order to optimize the process, a specifically designed galvanic cell was used. SEM images, after polycarbonate dissolution, showed interconnected nanotube bundles with an average length of 18 μm and wall thickness of 38 nm.The deposited silicon was revealed by EDS analysis, whilst X-ray diffraction and Raman spectroscopy showed that nanotubes have an amorphous structure. Silicon nanotubes were also characterized by photo-electrochemical measurements that showed n-type conductivity and optical gap of ~1.6 eV. Keywords: Silicon nanotubes, …
Development of a test station for accurate in situ I-V curve measurements of photovoltaic modules in Southern Norway
2011
The development of an outdoor test station for accurate in situ I-V curve measurements of photovoltaic (PV) modules is described. The modules are installed in an open-rack configuration at the University of Agder in Southern Norway. Seven new and three aged PV modules of different type and make are being tested, including mono-and multicrystalline silicon from differing manufacturing routes, triple-junction amorphous silicon, and CIS. Data acquisition is controlled with a multichannel electronic load system and LabVIEW software, recording high-resolution I-V curves at one-minute intervals. Between I-V curve sweeps, each module is operated at the maximum power point. Characteristic electrica…
Influence of the electro-optical properties of an a-Si:H single layer on the performances of a pin solar cell
2012
We analyze the results of an extensive characterization study involving electrical and optical measurements carried out on hydrogenated amorphous silicon (α-Si:H) thin film materials fabricated under a wide range of deposition conditions. By adjusting the synthesis parameters, we evidenced how conductivity, activation energy, electrical transport and optical absorption of an α-Si:H layer can be modified and optimized. We analyzed the activation energy and the pre-exponential factor of the dark conductivity by varying the dopant-to-silane gas flow ratio. Optical measurements allowed to extract the absorption spectra and the optical bandgap. Additionally, we report on the temperature dependen…
Electroluminescence and transport properties in amorphous silicon nanostructures
2006
We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend …
Short-range order and luminescence in amorphous silicon oxynitride
2000
Abstract Using Si 2p core-level X-ray photoelectron spectroscopy, we found that the short-range order in amorphous silicon oxynitride (a-SiOxNy) can be quantitatively described by a random bonding model. Results also show that the second and even further neighbours of the Si in the network affect the chemical shifts of the X-ray photoelectron spectra. Cathodoluminescence and photoluminescence of a-SiOxNy with different compositions are also measured. A red band with energies of 1.8–1.9 eV, a blue band with an energy of 2.7 eV and ultraviolet bands with energies of 13.1, 3.4–3.6, 4.4–4.7 and 5.4eV were observed. The 1.8–1.9 eV band is attributed to the O and N atoms with an unpaired electron…
Cooling of Hot Electrons in Amorphous Silicon
1997
ABSTRACTMeasurements of the cooling rate of hot carriers in amorphous silicon are made with a two-pump, one-probe technique. The experiment is simulated with a rate-equation model describing the energy transfer between a population of hot carriers and the lattice. An energy transfer rate proportional to the temperature difference is found to be consistent with the experimental data while an energy transfer independent of the temperature difference is not. This contrasts with the situation in crystalline silicon. The measured cooling rates are sufficient to explain the difficulty in observing avalanche effects in amorphous silicon.