Search results for "Applied Physics"
showing 10 items of 1226 documents
Vacuum electrical breakdown conditioning study in a parallel plate electrode pulsed dc system
2019
Conditioning of a metal structure in a high-voltage system is the progressive development of resistance to vacuum arcing over the operational life of the system. This is, for instance, seen during the initial operation of radio frequency (rf) cavities in particle accelerators. It is a relevant topic for any technology where breakdown limits performance and where conditioning continues for a significant duration of system run time. Projected future linear accelerators require structures with accelerating gradients of up to 100 MV/m. Currently, this performance level is achievable only after a multimonth conditioning period. In this work, a pulsed dc system applying voltage pulses over paral…
Room-temperature performance of 3 mm-thick cadmium-zinc-telluride pixel detectors with sub-millimetre pixelization.
2020
Cadmium–zinc–telluride (CZT) pixel detectors represent a consolidated choice for the development of room-temperature spectroscopic X-ray imagers, finding important applications in medical imaging, often as detection modules of a variety of new SPECT and CT systems. Detectors with 3–5 mm thicknesses are able to efficiently detect X-rays up to 140 keV giving reasonable room-temperature energy resolution. In this work, the room-temperature performance of 3 mm-thick CZT pixel detectors, recently developed at IMEM/CNR of Parma (Italy), is presented. Sub-millimetre detector arrays with pixel pitch less than 500 µm were fabricated. The detectors are characterized by good room-temperature performan…
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
Comparison Between Point Defect Generation by $\gamma$-rays in Bulk and Fibre Samples of High Purity Amorphous ${\hbox {SiO}}_{2}$
2008
We compare the E', H(I) and Si-ODC(II) contents in a low-OH high-purity a-SiO2 either in bulk or fibre forms. We found that the H(I) centre appears during irradiation and tend to increase with the dose if the fibre contains hydrogen excess. This behaviour is believed to be one the possible reason to explain the apparent radiation-sensitivity enhancement in the blue-UV spectrum when the fibre is hydrogenated and irradiated at high dose. However for the hydrogen-treated fibres, no experimental repeatability could be evidenced in the measurements of E' and Si-ODC(II) although an acceptable agreement was still found in normal samples. This suggests a possible complex reactional mechanisms in pr…
Dislocation mobility study of heavy ion induced track damage in LiF crystals
2008
Track damage created in LiF crystals by swift U, Kr, Xe and Ni ions with a specific energy of 11.1 MeV/u was studied using dislocation mobility measurements, track etching, SEM, AFM and optical microscopy. The results demonstrate continuity of etching of U tracks while discontinuities of etching are observed in the case of Xe ions. The relationship between the track structure and dislocation mobility in irradiated crystals is discussed. The dislocation mobility technique can serve as a highly sensitive method for track core damage studies.
Micro-Raman analysis of the fuel-cladding interface in a high burnup PWR fuel rod
2017
International audience; New insights on the fuel-cladding bonding layer in high burnup nuclear fuel were obtained using micro-Raman spectroscopy. A specimen was specifically prepared from a fuel rod which had been irradiated to an average burnup of 56 GWd.tU-1 in a pressurized water reactor (PWR). Both inner and outer corrosion scale regions were investigated. A 10-15 et956;m thick zirconia bonding layer between fuel and cladding materials which consisted of three distinct regions was observed. Close to the fuel, tetragonal, then monoclinic zirconia was identified as the main phases. Close to the bonding layer-cladding interface, peculiar Raman signals were observed. Similar signals were ob…
Tritium retention measurements by accelerator mass spectrometry and full combustion of W-coated and uncoated CFC tiles from the JET divertor
2016
Abstract Accelerator mass spectrometry (AMS) and the full combustion method (FCM) followed by liquid scintillation counting were applied to quantitatively determine the tritium retention in the tungsten-coated carbon fibre composites (CFC), in comparison to uncoated CFC tiles from the JET divertor. The tiles were adjacent and exposed to plasma operations between 2007 and 2009. The tritium depth profiles are showing that the tritium retention on the W-coated tile was reduced by a factor of 13.5 in comparison to the uncoated tile whereas the bulk tritium concentration is approximately the same for both tiles.
Radiation effects on silica-based preforms and optical fibers-II: Coupling ab initio simulations and experiments
2008
International audience; Abstract—Experimental characterization through electron paramagnetic resonance (EPR) and confocal luminescence microscopy (CML) of a Ge-doped glass (preform and fiber) reveals the generation of several point defects by 10 keV X-ray radiation-induced attenuation: GeE', Ge(1), Ge(2), and Ge-ODC. The generation mechanisms of Ge-ODC and charged defects like GeE' centers are studied through ab initio simulation. Our calculations used a 108 atom supercell with a glass composition comparable to the Ge-doped core or to the pure-silica cladding of the canonical sample. The large size of our cell allows us to study the influence of the local environment surrounding the X-ODC d…
Single-Event Burnout Mechanisms in SiC Power MOSFETs
2018
Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle linear energy transfers greater than 10 MeV/cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic bipolar junction transistor turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB. peerReviewed
Radiation effects on silica-based preforms and optical fibers-I: Experimental study with canonical samples
2008
International audience; Prototype samples of preforms and associated fibers have been designed and fabricated through MCVD process to investigate the role of fluorine (F) and germanium (Ge) doping elements on the radiation sensitivity of silica-based glasses. We characterized the behaviors of these canonical samples before, during and after 10 keV X-ray irradiation through several spectroscopic techniques, to obtain global information (in situ absorption measurements, electron paramagnetic resonance) or spatially-resolved information (confocal microscopy, absorption and luminescence on preform). These tests showed that, for the Ge-doped fiber and in the 300–900 nm range, the radiation-induc…