Search results for "Applied Physics"
showing 10 items of 1226 documents
Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen
2012
Abstract Ru thin films were grown on hydrogen terminated Si, SiO 2 , Al 2 O 3 , HfO 2 , and TiO 2 surfaces by atomic layer deposition from bis(2,5-dimethylpyrrolyl)ruthenium precursor and oxygen. The 4–20 nm thick films on these surfaces consisted of nanocrystalline hexagonal metallic ruthenium, regardless of the deposition temperature. At the lowest temperatures examined, 250–255 °C, the growth of the Ru films was favored on silicon, compared to the growth on Al 2 O 3 , TiO 2 and HfO 2 . At higher temperatures the nucleation and growth of Ru became enhanced in particular on HfO 2 , compared to the process on silicon. At 320–325 °C, no growth occurred on Si–H and SiO 2 -covered silicon. Res…
Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen
2011
Ru films were grown by atomic layer deposition in the temperature range of 275―350°C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO 2 , ZrO 2 , and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20:1 aspect ratio. ZrO 2 promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO 2 with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8―…
Kinetics of Bulk Lifetime Degradation in Float‐Zone (FZ) Silico n : Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen vs …
2020
Float-zone (FZ) silicon often has grown-in defects that are thermally activated in a broad temperature window (≈300–800 °C). These defects cause efficient electron-hole pair recombination, which deteriorates the bulk minority carrier lifetime and thereby possible photovoltaic conversion efficiencies. Little is known so far about these defects which are possibly Si-vacancy/nitrogen-related (VxNy). Herein, it is shown that the defect activation takes place on sub-second timescales, as does the destruction of the defects at higher temperatures. Complete defect annihilation, however, is not achieved until nitrogen impurities are effused from the wafer, as confirmed by secondary ion mass spectro…
Phonon-plasmon coupling in Si doped GaN nanowires
2016
Abstract The vibrational properties of silicon doped GaN nanowires with diameters comprised between 40 and 100 nm are studied by Raman spectroscopy through excitation with two different wavelengths: 532 and 405 nm. Excitation at 532 nm does not allow the observation of the coupled phonon–plasmon upper mode for the intentionally doped samples. Yet, excitation at 405 nm results in the appearance of a narrow peak at frequencies close to that of the uncoupled A 1 (LO) mode for all samples. This behavior points to phonon–plasmon scattering mediated by large phonon wave-vector in these thin and highly doped nanowires.
Development of dark Ti(C,O,N) coatings prepared by reactive sputtering
2008
Accepted manuscript
Photoconductivity and optical properties of silicon coated by thin TiO2 film in situ doped by Au nanoparticles
2013
Light trapping enhancement by plasmonic-active metal nanoparticles (NPs) is believed to be a promising approach to increase silicon-based solar cell efficiency. Therefore, we investigated TiO2 films in situ doped by Au NPs (TiO2:AuNPs) deposited by spin coating on a silicon substrate. Photoconductivity and optical properties of the TiO2:AuNPs/Si structures were studied in comparison with those of TiO2/Si reference samples. We found that an introduction of the 40–50 nm diameter AuNPs into the antireflective TiO2 layer deteriorates the antireflection properties and decreases the external yield of photogeneration of charge carriers. This is due to an increase of the layer reflection in the red…
Improving the material quality of silicon ingots by aluminum gettering during crystal growth
2016
We present a method for the purification of silicon ingots during the crystallization process that reduces significantly the width of the low charge carrier lifetime region at the ingot top. The back-diffusion of impurities from the ingot top is suppressed by adding a small amount of pure aluminum into the silicon melt right at the end of the solidification. We study the aluminum gettering effect by instrumental neutron activation analysis (INAA) and Fei imaging. Furthermore, we present a model for aluminum gettering of Fe in the silicon ingot that is in agreement with literature data for aluminum gettering at lower temperature. The distribution of iron in the ingots with and without alumin…
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties
2017
Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300 C), film thickness (20-300 nm), bilayer thickness (0.1-100 nm),…
Interfacial reaction during MOCVD growth revealed by in situ ARXPS.
2006
International audience; Angle-resolved X-ray photoelectron spectroscopy (ARXPS) experiments were performed to study in situ the reaction at the film–substrate interface during metal organic chemical vapor deposition (MOCVD) growth of TiO2 thin films deposited on the silicon substrate. The in-depth distribution of chemical species was determined using several ARXPS thickness calculation models considering either single or bilayer systems. By the comparison of two single-layermodels, the presence of a second layer composed of silicon oxidewas evidenced. High-resolution transmission electron microscopy (HRTEM) observations confirmed the stratification of the film in two layers, as well as the …
EPR study of Ce3+ luminescent centers in the Y2SiO5 single crystalline films
2017
Abstract The work reports results of EPR investigation of the Ce3+ incorporation in the Y2SiO5 and (Y,La)2SiO5 single crystalline films (SCFs), grown by liquid phase epitaxy method. The Ce3+ content determined from EPR spectra varied between 0.49 and 0.65 at. % in Y2SiO5 SCFs and strongly increased up to 1.9 at. % in (Y,La)2SiO5 SCF, suggesting a positive role of the La dopant in the incorporation of the Ce3+ ions into Y2SiO5 host. The EPR study showed the presence of only one type of Ce3+ centers (Ce1) corresponding to the localization of Ce3+ ions in the seven–fold coordinated positions of the Y2SiO5 host. No Ce2 center spectra (six-fold coordinated Ce3+ positions) were detected in films …