Search results for "Atomic layer"
showing 10 items of 140 documents
Properties of AlN grown by plasma enhanced atomic layer deposition
2011
Abstract The influence of growth parameters on the properties of AlN films fabricated by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia precursors was investigated. The atomic concentrations, refractive index, mass density, crystallinity and surface roughness were studied from the films grown in the temperature range of 100–300 °C with plasma discharge times between 2.5 and 30 s. The AlN films were shown to be hydrogen rich having H concentrations in the range of 13–27 at.% with inverse dependence on the growth temperature. The carbon and oxygen concentrations in the films were less than 2.6% and 0.2%, respectively. The refractive index and mass density of the f…
Reaction pathways for atomic layer deposition with lithium hexamethyl disilazide, trimethyl phosphate, and oxygen plasma
2020
Atomic layer deposition (ALD) of lithium-containing films is of interest for the development of next-generation energy storage devices. Lithium hexamethyl disilazide (LiHMDS) is an established precursor to grow these types of films. The LiHMDS molecule can either be used as a single-source precursor molecule for lithium or as a dual-source precursor molecule for lithium and silicon. Single-source behavior of LiHMDS is observed in the deposition process with trimethylphosphate (TMP) resulting in the deposition of crystalline lithium phosphate (Li3PO4). In contrast, LiHMDS exhibits dual-source behavior when combined with O2 plasma, resulting in a lithium silicate. Both processes were characte…
Phosphites as precursors in atomic layer deposition thin film synthesis
2021
We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and are open for deposition of reduced phases by ALD. We have investigated their applicability for the synthesis of LiPO and AlPO materials and characterized their growth by means of in situ quartz crystal microbalance. Phosphites are good alternatives to the established phosphate-based synthesis routes as they have high vapor pressure and are compatible with water as a coreactant during deposition. The deposited materials have been characterized using XPS, x-ray fluorescence…
Suppression of Forward Electron Injection from Ru(dcbpy)2(NCS)2 to Nanocrystalline TiO2 Film As a Result of an Interfacial Al2O3 Barrier Layer Prepar…
2009
Subnanometer-thick Al2O3 barrier layers on nanocrystalline TiO2 film were prepared with atomic layer deposition (ALD). The method allowed variation of barrier thicknesses at atomic resolution also deep in nanoporous structures, which makes it a superior method as compared to, e.g., sol−gel techniques. In this letter we present results on the effect of Al2O3 barriers of various thicknesses on forward electron injection in dye-sensitized solar cells. A decrease in the amplitude of the oxidized Ru(dcbpy)2(NCS)2 dye absorption signal due to singlet injection was observed already after one deposition cycle that produces a discontinuous layer with nominal thickness of 1 A. More than two layer coa…
Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
2016
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the…
Photoluminescence Study of Defects in ZnO-Coated Polyacrylonitrile Nanofibers
2020
International audience; Core-shell nanostructures of one-dimensional (1D) polyacrylonitrile (PAN)/zinc oxide (ZnO) were obtained by combining atomic layer deposition (ALD) and electrospinning. Nanofibers with different ZnO thicknesses were synthesized and investigated. The present work offers novel information about 1D ZnO structural defects and activation energies (Ea) by performing photoluminescence (PL) measurements. PL measurements of 1D ZnO/PAN samples were investigated from 77 K to 273 K (room temperature). By analyzing the obtained data of the emission spectrum, Ea and temperature coefficients were calculated. The results let us suggest an approximate model of defects in 1D ZnO/PAN s…
Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis
2021
Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for the production of uniform, conformal and pinhole free NiO with sub-nanometre control on a commercial ALD reactor. In this work we use the readily available nickel precursor nickelocene in conjunction with O2 plasma as a co-reagent (100 W) over a temperature range of 75–325 °C. An optimised growth per cycle of 0.036 nm was obtained at 250 °C with uniform thickness and coverage on scale-up to and including an 6 inch Si wafer (with a 200 nm thermal SiO2 top layer). The bulk characteristics of the NiO thin films were comprehensively interrogated by PXRD, Raman spectrosco…
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
2020
In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H-SiC) has been investigated by atomic force microscopy (AFM) and Raman spectroscopy. Contrary to what is typically observed for other types of graphene, a large and uniform density of nucleation sites was observed in the case of EG and ascribed to the presence of the buffer layer at EG/SiC interface. The deposition process was characterized by Al2O3 island growth in the very early stages, followed by the formation of a continuous Al2O3 film (2.4 nm thick) after only 40 ALD cycles due to the isla…
Corrosion Protection of Steel with Oxide Nanolaminates Grown by Atomic Layer Deposition
2011
Atomic layer deposited (ALD) aluminum and tantalum oxide (Al 2 O 3 and Ta 2 O 5 ) and their nanolaminates were applied as corrosion protection coatings on AISI 52100 steel. The aim was to combine the good sealing properties of Al 2 O 3 with the chemical stability of Ta 2 O 5 and to optimize the coating architecture in order to obtain the best possible long-term durability. Coating composition and morphology were studied with time-of-flight elastic recoil detection analysis (ToF-ERDA), time-of-flight secondary ion mass spectrometry (ToF-SIMS) and field emission scanning electron microscopy (FESEM) and energy dispersive x-ray spectrometry (EDS). Electrochemical properties were studied with vo…
Tuning Optical Properties of Al 2 O 3 /ZnO Nanolaminates Synthesized by Atomic Layer Deposition
2014
Nanolaminates are of great interest for their unique properties such as high dielectric constants and advanced mechanical, electrical, and optical properties. Here we report on the tuning of optical and structural properties of Al2O3/ZnO nanolaminates designed by atomic layer deposition (ALD). Structural properties of nanolaminates were studied by SEM, GIXRD, and AFM. Optical characterization was performed by transmittance and photoluminescence (PL) spectroscopy. Complex study of monolayer properties was performed by ellipsometry. Optical constants for Al2O3 and ZnO monolayer were calculated. The band gap of ZnO single layers and the excitonic PL peak position were shifted to the UV region …