Search results for "Atomic layer"
showing 10 items of 140 documents
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties
2017
Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300 C), film thickness (20-300 nm), bilayer thickness (0.1-100 nm),…
Pulsed Direct liquid Injection ALD of TiO2 Films Using Titanium Tetraisopropoxide Precursor
2013
Abstract TiO 2 thin films are grown by pulsed direct liquid injection atomic layer deposition with rapid thermal heating using titanium tetraisopropoxide and water vapor as precursors. The ALD growth rate is constant in the saturation zone range 35-47 ms at the temperature deposition of 280 °C. The TiO 2 growth rate of 0.018 nm/cycle was achieved in a self-limited ALD mode. SEM and AFM analysis showed the as-deposited films have a smooth surface with a low roughness. XPS analysis exhibited the stoichiometry of TiO 2 in the homogenous depth composition.
Dark-Line Atomic Resonances in Micrometric Rb-Vapor Layer
2007
We present measurements of dark-line resonances excited in Rb atomic vapor confined in micrometric cells (MC). In our work, the Lambda-systems on D2 line of 85Rb have been studied with the use of bi-chromatic radiation of two separate narrowband diode lasers.
Whispering gallery mode resonators covered by a ZnO nanolayer
2020
Abstract The exceptional ability of whispering gallery mode resonators (WGMRs) to confine light within makes them interesting for sensing applications. The small size and high values of quality (Q) factors of the WGMR can be combined with a broad range of supporting optical elements. The surface of the resonator can be coated to enhance the desired attributes. In this paper, the impact of the ZnO layer thickness on the Q-factor of the WGMR has been studied. WGMRs were fabricated on a tip of a standard telecom fiber melted with an oxyhydrogen flame. The surface of the WGMR was coated with ZnO nanolayers of different thickness (5–100 nm) by atomic layer deposition (ALD). The Q-factor of as-pr…
Transparent conductive oxide photonic crystals on textured substrates
2011
Three-dimensional ZnO:Al photonic crystals were fabricated by atomic layer deposition on highly textured substrates. It turns out that these inverted opals consist of a thin intermediate disordered layer close to the textured substrate followed by a highly-ordered photonic crystal layer. The photonic crystals themselves exhibit comparable optical properties to those on planar substrates.
ZnS Ultrathin interfacial layers for optimizing carrier management in Sb2S3-based photovoltaics
2021
Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over th…
Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures
2014
Abstract Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an o…
Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate
2015
Abstract For every coating it is critical that the coatings are sufficiently durable to withstand practical applications and that the films adhere well enough to the substrate. In this paper the nanotribological, nanomechanical and interfacial properties of 15–100 nm thick atomic layer deposited (ALD) TiO 2 coatings deposited at 110–300 °C were studied using a novel combination of nanoscratch and scanning nanowear testing. Thin film wear increased linearly with increasing scanning nanowear load. The film deposited at 300 °C was up to 58±11 %-points more wear-resistant compared to the films deposited at lower temperatures due to higher hardness and crystallinity of the film. Amorphous/nanocr…
Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
2019
Abstract Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Fight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s−1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s−1). The better SRV with AlOxNy film is due …
Atomic layer deposition of LixTiyOz thin films
2013
Atomic layer deposition (ALD) was employed to deposit ternary films of LixTiyOz. The film growth at a deposition temperature of 225 °C was studied using both titanium tetra-isoropoxide (Ti(OiPr)4) and titanium tetrachloride (TiCl4) as titanium precursors. Lithium tert-butoxide (LiOtBu) was applied as the lithium source and water was used as the oxygen source for all metal precursors. The type of titanium precursor chosen strongly affected film growth: with TiCl4 the resulting LixTiyOz films were highly air-sensitive and the lithium concentration was low, whereas with Ti(OiPr)4 the films were relatively stable in air and with a lithium content which was easily controlled over a wide range. F…