Search results for "Breakdown"

showing 10 items of 97 documents

Experimental Study of the Multipactor Effect in a Partially Dielectric-Loaded Rectangular Waveguide

2019

This letter presents the experimental study of the multipactor threshold in a partially dielectric-loaded rectangular waveguide, whose results validate a multipactor model recently developed by the authors, which includes the charge distribution appearing on the dielectric surface during the multipactor discharge. First, the variation of the multipactor RF voltage threshold has been theoretically analyzed in different waveguide configurations: in an empty waveguide, and also in the cases of a one-sided and two-sided dielectric-loaded waveguides. To reach this aim, an in-house Monte Carlo simulation tool has been developed. The Secondary Electron Yield (SEY) of the metallic and dielectric ma…

Multipactor effect621.3 - Ingeniería eléctrica. Electrotecnia. TelecomunicacionesMaterials scienceMonte Carlo methodPhysics::Optics02 engineering and technologyDielectricWaveguide (optics)law.inventionOpticslaw0202 electrical engineering electronic engineering information engineeringElectrical and Electronic EngineeringdielectricTransformerbusiness.industryRF breakdown020206 networking & telecommunicationsCondensed Matter PhysicsSecondary Electron Yield (SEY)Surface wavewaveguide transformerMultipactor effectRadio frequencyrectangular waveguidebusinessVoltageIEEE Microwave and Wireless Components Letters
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Multipactor RF Breakdown in Coaxial Transmission Lines With Digitally Modulated Signals

2016

The aim of this paper is the study of the RF multipactor breakdown in coaxial transmission lines excited by a single carrier with a digitally modulated signal. Employing an in-house developed code, numerical simulations are performed to determine the RF multipactor voltage threshold for several digitally modulated signals under different modulations schemes: quadrature phase-shift keying, 16-quadrature amplitude modulation, 16-amplitude and phase-shift keying, and 32-amplitude and phase-shift keying. Moreover, a coarse method based on the envelope integration to determine the RF multipactor voltage threshold when involving arbitrary digital modulations is also presented. These results are a…

Multipactor effectEngineeringAcoustics02 engineering and technology01 natural sciences010305 fluids & plasmasHarmonic analysisAmplitude modulationDigital modulationTEORIA DE LA SEÑAL Y COMUNICACIONES0103 physical sciences0202 electrical engineering electronic engineering information engineeringElectronic engineeringElectrical and Electronic EngineeringQuadrature amplitude modulation (QAM)Coaxial waveguidesbusiness.industry20-gap-crossing ruleRoot-raised-cosine filterRF breakdown020206 networking & telecommunicationsKeyingElectronic Optical and Magnetic MaterialsElectric power transmissionAmplitude and phaseshift keying (APSK)Multipactor effectRadio frequencybusinessQuadrature phase-shift keying (QPSK)Phase-shift keyingVoltageIEEE Transactions on Electron Devices
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Multipactor Effect in a Parallel-Plate Waveguide Partially Filled With Magnetized Ferrite

2014

The aim of this paper is the analysis of the multipactor effect in a parallel-plate waveguide when a ferrite slab, transversally magnetized by a static magnetic field parallel to the waveguide walls, is present. Employing an in-house developed code, numerical simulations are performed to predict the multipactor radio frequency voltage threshold in such a ferrite-loaded waveguide. Variations of the ferrite magnetization field strength and the ferrite slab height are analyzed. Effective electron trajectories are also shown for a better understanding of the breakdown phenomenon, finding different multipactor regimes.

Multipactor effectFerrite componentsMaterials scienceCondensed matter physicsPhysics::Instrumentation and DetectorsPhysics::OpticsRF breakdownField strengthMagnetostaticsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceMagnetizationRadio frequency (RF) breakdownParallel-plate waveguideTEORIA DE LA SEÑAL Y COMUNICACIONESElectronic engineeringSlabFerrite (magnet)Multipactor effectRadio frequencyPhysics::Chemical PhysicsElectrical and Electronic EngineeringVoltageIEEE Transactions on Electron Devices
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Multipactor Mitigation in Coaxial Lines by Means of Permanent Magnets

2014

The main aim of this paper is the analysis of the feasibility of employing permanent magnets for the multipactor mitigation in a coaxial waveguide. First, the study of a coaxial line immersed in a uniform axial magnetic field shows that multipactor can be suppressed at any RF if the external magnetic field is strong enough. Both theoretical simulations and experimental tests validate this statement. Next, multipactor breakdown of a coaxial line immersed in a hollow cylindrical permanent magnet is analyzed. Numerical simulations show that multipactor can be suppressed in a certain RF range. The performed experimental test campaign demonstrates the capability of the magnet to avoid the multip…

Multipactor effectMaterials scienceElectron multiplicationbusiness.industryElectrical engineeringRF breakdownPACTORAccelerators and Storage RingsElectronic Optical and Magnetic MaterialsMagnetic fieldPermanent magnetOpticsDC magnetic fieldMagnetTEORIA DE LA SEÑAL Y COMUNICACIONESCoaxial waveguidesCoaxial lineMultipactor effectCoaxial waveguideElectrical and Electronic EngineeringMultipactor mitigationbusinessIEEE Transactions on Electron Devices
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Experimental Analysis of the Multipactor Effect With RF Pulsed Signals

2015

The main goal of this letter is the analysis of the multipactor effect within a coaxial waveguide excited by an RF pulsed signal. The variation of the multipactor RF voltage thresholdwiththe ON interval length of the pulse has been analyzed. To reach this aim, an in-house multipactor simulation code based on the Monte-Carlo algorithm has been implemented. The numerical simulations show that the multipactor RF voltage threshold increases as the ON pulse interval diminishes. In addition, an experiment was carried out to validate the proposed theoretical model, and demonstrating the excellent agreement between the theory and the experimental data. Finally, the results are compared with the 20-…

Multipactor effectbusiness.industry20-gap-crossing ruleRF breakdownInterval (mathematics)SignalElectronic Optical and Magnetic MaterialsPulse (physics)Threshold voltageOpticsTEORIA DE LA SEÑAL Y COMUNICACIONESElectronic engineeringRF pulseCoaxial waveguidesRadio frequencyMultipactor effectElectrical and Electronic EngineeringCoaxial waveguidebusinessVoltage
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Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

2020

The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.

Nuclear and High Energy PhysicsMaterials science010308 nuclear & particles physicsbusiness.industrySchottky diode01 natural sciencesIonchemistry.chemical_compoundReverse leakage currentNuclear Energy and Engineeringchemistry0103 physical sciencesSilicon carbideOptoelectronicsBreakdown voltageIrradiationElectrical and Electronic EngineeringbusinessDiodeVoltageIEEE Transactions on Nuclear Science
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Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

2018

Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…

Nuclear and High Energy PhysicsMaterials scienceInsulator (electricity)Dielectrickondensaattorit01 natural sciencesmetal–insulator–semiconductor (MIS) deviceslaw.inventionelektroniikkakomponentitchemistry.chemical_compoundlaw0103 physical sciencesBreakdown voltageElectrical and Electronic EngineeringMetal–insulator–metal (MIM) devicessingle event effects (SEEs)ta114ta213010308 nuclear & particles physicsbusiness.industryAmplifierMicrobeamsingle event gate ruptureCapacitorNuclear Energy and EngineeringSilicon nitridechemistrysäteilyfysiikkaElectrodeOptoelectronicsbusinessIEEE Transactions on Nuclear Science
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Comparison of LIBS results on ITER-relevant samples obtained by nanosecond and picosecond lasers

2019

This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement number 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. Work performed under EUROfusion WP PFC.

Nuclear and High Energy PhysicsMaterials scienceMaterials Science (miscellaneous)chemistry.chemical_element01 natural sciences010305 fluids & plasmaslaw.inventionPulsed laser depositionsymbols.namesakeLIBS diagnosticslaw0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]Temperature of laser-produced plasmaLaser-induced breakdown spectroscopyta216010302 applied physicsArgonta114Pulse durationNanosecondLaserlcsh:TK9001-9401Nuclear Energy and EngineeringchemistryStark effectPicosecondITER-relevant coatingssymbolslcsh:Nuclear engineering. Atomic powerDetection of hydrogen isotopesElemental depth profilesAtomic physicsNuclear Materials and Energy
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Vacuum electrical breakdown conditioning study in a parallel plate electrode pulsed dc system

2019

Conditioning of a metal structure in a high-voltage system is the progressive development of resistance to vacuum arcing over the operational life of the system. This is, for instance, seen during the initial operation of radio frequency (rf) cavities in particle accelerators. It is a relevant topic for any technology where breakdown limits performance and where conditioning continues for a significant duration of system run time. Projected future linear accelerators require structures with accelerating gradients of up to 100  MV/m. Currently, this performance level is achievable only after a multimonth conditioning period. In this work, a pulsed dc system applying voltage pulses over paral…

Nuclear and High Energy PhysicsMaterials sciencePhysics and Astronomy (miscellaneous)Electrical breakdownFOS: Physical sciencesApplied Physics (physics.app-ph)01 natural sciences114 Physical scienceslaw.inventionElectric arclaw0103 physical scienceslcsh:Nuclear and particle physics. Atomic energy. Radioactivity010306 general physics010308 nuclear & particles physicsbusiness.industryPulsed DCParticle acceleratorPhysics - Applied PhysicsSurfaces and InterfacesElectrodeOptoelectronicslcsh:QC770-798Radio frequencybusinessphysics.app-phOrder of magnitudeVoltagePhysical Review Accelerators and Beams
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Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

2020

International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.

Nuclear and High Energy PhysicsMaterials scienceRadiation effectsSilicon carbide[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]Stress01 natural sciencesNeutron effectsSilicon carbide (SiC)Stress (mechanics)Semiconductor device modelschemistry.chemical_compoundMOSFETReliability (semiconductor)0103 physical sciencesMOSFETSilicon carbideBreakdown voltageSemiconductor device breakdownSilicon compoundsSingle Event BurnoutNeutronIrradiationElectrical and Electronic EngineeringPower MOSFETPower MOSFETComputingMilieux_MISCELLANEOUSElectric breakdownNeutrons[PHYS]Physics [physics]010308 nuclear & particles physicsbusiness.industryLogic gatesWide band gap semiconductorsSemiconductor device reliability[SPI.TRON]Engineering Sciences [physics]/ElectronicsNuclear Energy and Engineeringchemistry13. Climate actionSingle-event burnout (SEB)Atmospheric neutronsOptoelectronicsbusinessTechnology CAD (electronics)
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