Search results for "CIRCUIT"
showing 10 items of 936 documents
Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
2001
Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.
ELECTRON-PHONON COUPLING IN HEAVILY DOPED SILICON
2001
The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon. Electron-phonon interaction is proportional to T6 and the coupling constant is found to be 1.5 × 108 W/K5m³, which is about one tenth of the value in normal metals.
Hard X-Ray Response of Pixellated CdZnTe Detectors
2009
In recent years, the development of cadmium zinc telluride (CdZnTe) detectors for x-ray and gamma ray spectrometry has grown rapidly. The good room temperature performance and the high spatial resolution of pixellated CdZnTe detectors make them very attractive in space-borne x-ray astronomy, mainly as focal plane detectors for the new generation of hard x-ray focusing telescopes. In this work, we investigated on the spectroscopic performance of two pixellated CdZnTe detectors coupled with a custom low noise and low power readout application specific integrated circuit (ASIC). The detectors (10x10x1 and 10x10x2 mm3 single crystals) have an anode layout based on an array of 256 pixels with a …
On the theoretical–numerical study of the ITER Upper Port Plug structure hydraulic behaviour under steady state and draining and drying transient con…
2011
Abstract The ITER diagnostic Upper Port Plug (UPP) is a water-cooled stainless steel structure aimed to integrate within vacuum vessel the plasma diagnostic systems, shielding them from neutron and photon irradiation. Due to the very intense heat loads expected, a proper cooling circuit has been designed to ensure an adequate UPP cooling with an acceptable thermal rise and an unduly high pumping power and to perform its draining and drying procedure by injection of pressurized nitrogen. A theoretical research activity has been launched at the Department of Nuclear Engineering of the University of Palermo aiming to investigate the hydraulic behaviour of the UPP Trapezoid Section cooling circ…
Chip-to-chip plasmonic interconnects and the activities of EU project NAVOLCHI
2012
In this paper, the chip-to-chip interconnection architecture adopted by the EU-project NAVOLCHI are discussed. The plasmonic physical layer consisting of a plasmonic nanoscale laser, a modulator, an amplifier and a detector is introduced. Current statuses of the plasmonic devices are reviewed.
Unstable behaviour of normally-off GaN E-HEMT under short-circuit
2018
The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving the…
Controlling the mode of operation of organic transistors through side chain engineering
2016
Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…
Thermo-optic control of dielectric-loaded plasmonic waveguide components
2010
International audience; We report preliminary results on the development of compact (length 20%) is demonstrated with MZI-and WRR-based components, and efficient (similar to 30%) rerouting is achieved with DC switches. (C) 2010 Optical Society of America
WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
2020
International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…
Carrier transport mechanism in the SnO(2):F/p-type a-Si:H heterojunction
2011
We characterize SnO(2):F/p-type a-Si:H/Mo structures by current-voltage (I-V) and capacitance-voltage (C-V) measurements at different temperatures to determine the transport mechanism in the SnO2:F/p-type a-Si:H heterojunction. The experimental I-V curves of these structures, almost symmetric around the origin, are ohmic for vertical bar V vertical bar< 0:1 V and have a super-linear behavior (power law) for vertical bar V vertical bar < 0:1 V. The structure can be modeled as two diodes back to back connected so that the main current transport mechanisms are due to the reverse current of the diodes. To explain the measured C-V curves, the capacitance of the heterostructure is modeled as the …