Search results for "CRO"

C-switches: Increasing switch radix with current integration scale

2011

In large switch-based interconnection networks, increasing the switch radix results in a decrease in the total number of network components, and consequently the overall cost of the network can be significantly reduced. Moreover, high-radix switches are an attractive option to improve the network performance in terms of latency, since hop count is also reduced. However, there are some problems related to the integration scale to design such single-chip switches. In this paper we discuss key issues and evaluate an interesting alternative for building high-radix switches going beyond the integration scale bounds. The idea basically consists in combining several current smaller single-chip swi…

Silicon Surface Passivation by ALD-Ga2O3: Thermal vs. Plasma-Enhanced Atomic Layer Deposition

2020

Silicon surface passivation by gallium oxide (Ga2O3) thin films deposited by thermal- and plasma-enhanced atomic layer deposition (ALD) over a broad temperature range from 75 °C to 350 °C is investigated. In addition, the role of oxidant (O3 or O-plasma) pulse lengths insufficient for saturated ALD-growth is studied. The material properties are analyzed including the quantification of the incorporated hydrogen. We find that oxidant dose pulses insufficient for saturation provide for both ALD methods generally better surface passivation. Furthermore, different Si surface pretreatments are compared (HF-last, chemically grown oxide, and thermal tunnel oxide). In contrast to previous reports, t…

Determination of Contact Potential Difference by the Kelvin Probe (Part II) 2. Measurement System by Involving the Composite Bucking Voltage

2016

Abstract The present research is devoted to creation of a new low-cost miniaturised measurement system for determination of potential difference in real time and with high measurement resolution. Furthermore, using the electrode of the reference probe, Kelvin method leads to both an indirect measurement of electronic work function or contact potential of the sample and measurement of a surface potential for insulator type samples. The bucking voltage in this system is composite and comprises a periodically variable component. The necessary steps for development of signal processing and tracking are described in detail.

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

2019

International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any…

Object size effect on the contact potential difference measured by scanning Kelvin probe method

2010

International audience; Contact potential difference (CPD) was measured by macroscopic Kelvin probe instrument and scanning Kelvin probe microscope on Al, Ni and Pt on ITO substrates at ambient conditions. CPD values measured by scanning Kelvin probe microscope and macroscopic Kelvin probe are close within the error of about 10-30% for large studied objects, whereas scanning Kelvin probe microscope signal decreases, when the object size becomes smaller than 1.4 m. CPD and electric field signals measured using many-pass technique allowed us to estimate the influence of electrostatic field disturbance, especially, in the case of small objects.

Determination of Contact Potential Difference by the Kelvin Probe (Part I) I. Basic Principles of Measurements

2016

Abstract Determination of electric potential difference using the Kelvin probe, i.e. vibrating capacitor technique, is one of the most sensitive measuring procedures in surface physics. Periodic modulation of distance between electrodes leads to changes in capacitance, thereby causing current to flow through the external circuit. The procedure of contactless, non-destructive determination of contact potential difference between an electrically conductive vibrating reference electrode and an electrically conductive sample is based on precise control measurement of Kelvin current flowing through a capacitor. The present research is devoted to creation of a new low-cost miniaturised measuremen…

Metallurgical Strategies for the Joining of Titanium Alloys with Steels

2018

Physical properties and microstructure characteristics of (1–x)BaTiO3–xCaTiO3 systems

2018

The study investigates the microstructure, thermal and mechanical properties of (1–x)BaTiO3–xCaTiO3 ((1–x)BT–xCT)) (x = 0.01, 0.04, 0.08) samples. The BT–CT system to be tested was formed as a soli...

Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM

2020

International audience; In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of permanent and temporarily stuck cells, block errors, and single-bit upsets.

2018

CrN thin films with an N/Cr ratio of 95% were deposited by reactive magnetron sputtering onto (0 0 0 1) sapphire substrates. X-ray diffraction and pole figure texture analysis show CrN (1 1 1) epitaxial growth in a twin domain fashion. By changing the nitrogen versus argon gas flow mixture and the deposition temperature, thin films with different surface morphologies ranging from grainy rough textures to flat and smooth films were prepared. These parameters can also affect the CrN x system, with the film compound changing between semiconducting CrN and metallic Cr2N through the regulation of the nitrogen content of the gas flow and the deposition temperature at a constant deposition pressur…