Search results for "Cadmium telluride"
showing 8 items of 38 documents
Polarization phenomena in Al/p-CdTe/Pt X-ray detectors
2013
Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium, aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by …
A CdTe position sensitive spectrometer for hard X- and soft γ-ray polarimetry
2002
Coded Imager and Polarimeter for High Energy Radiation (CIPHER) is a hard X- and soft gamma- ray spectroscopic and polarimetric coded mask telescope based on an array of Cadmium telluride microspectrometers. The position sensitive detector (PSD) will be arranged in 4 modules of 32 x 32 crystals, each of 2 x 2 mm(2) cross-section and 10 mm thickness giving a total active area of about 160 cm(2), operating over a wide energy range (similar to10 keV to 1 MeV). Each PSD module is obtained by aligning 32 linear arrays of micro-detectors each also containing the integrated analog front end electronics on a thin ceramic layer. The CIPHER instrument will be proposed for a balloon experiment, both i…
Electrical Characterization of CdTe pixel detectors with Al Schottky anode
2014
Abstract Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage ( I–V ) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe con…
Spectroscopic response and charge transport properties of CdZnTe detectors grown by the vertical Bridgman technique
2015
In this work, we present the results of spectroscopic investigations on CdZnTe (CZT) detectors grown by the boron oxide encapsulated vertical Bridgman technique (1MEM-CNR, Parma, Italy). The detectors, with different thicknesses (1 and 2.5 mm), are characterized by the same electrode layout (gold electroless contacts): the anode is a central electrode (2 x 2 mm(2)) surrounded by a guard-ring electrode, while the cathode is a planar electrode covering the detector surface (4.1 x 4.1 mm(2)). The results of electrical investigations point out the low leakage currents of these detectors even at high bias voltages: 38 nA/cm(2) (T = 25 degrees C) at 10000 V/cm. The time stability and the spectros…
ZnO/CdTe/CuSCN, a promising heterostructure to act as inorganic eta-solar cell
2005
Abstract The ZnO/CdTe/CuSCN heterostructure was analyzed as a candidate to act as an inorganic eta -solar cell. A ZnO film consisting of single crystal nanocolumns was electrodeposited on a transparent conducting substrate which acts as n-type material. As absorber material we used CdTe, which was deposited on the ZnO columnar film by Metal Organic Chemical Vapor Deposition. In order to complete the eta -solar cell we deposited a CuSCN layer by chemical solution deposition. A conformal and uniform CdTe coverage of the ZnO columns was achieved, producing a very efficient light trapping effect. The effective absorption (∼87%) and effective reflectance (∼10%) of the complete heterostructure in…
Material quality characterization of CdZnTe substrates for HgCdTe epitaxy
2006
Cd1−xZnxTe (CZT) substrates were studied to investigate their bulk and surface properties. Imperfections in CZT substrates affect the quality of Hg1−xCdxTe (MCT) epilayers deposited on them and play a role in limiting the performance of infrared (IR) focal plane arrays. CZT wafers were studied to investigate their bulk and surface properties. Transmission and surface x-ray diffraction techniques, utilizing both a conventional closed-tube x-ray source as well as a synchrotron radiation source, and IR transmission micro-spectroscopy, were used for bulk and surface investigation. Synchrotron radiation offers the capability to combine good spatial resolution and shorter exposure times than conv…
Photoluminescence waveguiding in CdSe and CdTe QDs–PMMA nanocomposite films
2011
In this paper, active planar waveguides based on the incorporation of CdSe and CdTe nanocrystal quantum dots in a polymer matrix are demonstrated. In the case of doping the polymer with both types of quantum dots, the nanocomposite film guides both emitted colors, green (550 nm, CdTe) and orange (600 nm, CdSe). The optical pumping laser can be coupled not only with a standard end-fire coupling system, but also directing the beam to the surface of the sample, indicating a good absorption cross-section and waveguide properties. To achieve these results, a study of the nanocomposite optical properties as a function of the nanocrystal concentration is presented and the optimum conditions are fo…
Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications
2009
Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector…