Search results for "Carbide"
showing 10 items of 139 documents
Efficiency comparison between SiC- and Si-based active neutral-point clamped converters
2015
This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental tests are carried out to measure their overall losses and efficiency. Finally, experimental results are compared with the estimations to support the analysis. The efficiency of the SiC converter is hig…
Cutting performance and indentation behaviour of diamond films on Co-cemented tungsten carbide
2000
Abstract Diamond films were grown by Hot Filament Chemical Vapour Deposition (HFCVD) on differently pretreated ISO-grade K10 cemented carbide (WC-5.8 wt.%Co) cutting inserts. Etching with diluted HNO3 and surface roughening by Murakami's reagent were used as substrate pretreatments. The adhesion of the films was evaluated by indentation tests. In order to obtain a reliable estimation of the adhesion by the slope of the crack radius–indentation load curves, a careful SEM measurement of the crack lengths was performed. Bare and diamond-coated cutting inserts were used for turning tests of Al2O3-reinforced aluminum alloy. The adhesion levels obtained from the indentation curves correlated well…
Friction and wear of lubricated M3 Class 2 sintered high speed steel with and without TiC and MnS additives
2005
Abstract M3/2 sintered high speed steel and composite materials processed by initial admixing of 5 wt.% TiC (to decrease wear) and 5 wt.% MnS (to minimise friction) powders, singly and in combination, were assessed in pin-on-disc tribometers specially constructed to simulate use in the automotive valve train. Pins were of the sintered materials and the mating tribological material discs of T1 high speed steel. For comparison with existing conventional materials, identical tests were performed with discs and pins of two types of spheroidal cast iron. Testing at ∼110 °C, employing a few drops of fresh Shell Helix Standard SAE: 15W-40, API: SJ/CF oil, in daily segments of 5000 m of sliding dis…
Assessing Radiation Hardness of SIC MOS Structures
2018
It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.
WEAR PERFORMANCE OF CERAMIC CUTTING-TOOL MATERIALS WHEN CUTTING STEEL
1991
Abstract Some test cycles have been carried out in continuous cutting conditions, employing cutting parameters (feed, depth of cut and cutting speed) chosen following experimental planes and suitable test fields. The wear tests have been carried out on AISI 1040 steel with cutting speeds from 5m/sec to 11m/sec. The silicon nitride, sintered carbide, cubic boron nitride and alumina reinforced with SiC whiskers inserts, have shown, at each assigned cutting parameter, poor wear resistance when cutting steel. Alumina and alumina in submicron grain, which has been toughened by ZrO2 phase transformation, and the oxide-based alumina, have been the better wear resistance. The mixed based alumina ha…
Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring
2014
We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 μm device pitch exhibits the best results, being the best compromise in terms of fu…
A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter
2014
This paper presents a comparison of the behavior of the intrinsic diode of silicon (Si) and silicon carbide (SiC) MOSFETs. The study was done for 1200 V Si and SiC MOSFETs. The data sheet from manufacturers shows the characteristics of MOSFET' intrinsic diode when gate source voltage (VGS) is 0 V. There are applications where the MOSFET' intrinsic diode is used while VGS is different than 0 V. One of these applications is induction heating, where depending on the load and the regulation system, the diode can conduct a significant part of the inverter current. In most applications which use the MOSFET' intrinsic diode, the turn ON of the intrinsic diode happens at VGS = 0 V. After a blanking…
High Temperature SiC Blocking Diodes for Solar Array
2009
This paper presents the results of an experimental investigation of the performance of 300V-5A Silicon Carbide Ni and W Schottky diode operating in the range between -170°C to 270°C. We have developed these diodes as blocking diodes, for solar cell array protection in order to fulfill the BepiColombo mission specifications. An electro-thermal characterization has been performed taking into account the harsh condition of the mission (high temperature range and electrical stress). The destructive and non-destructive tests have assured that the designed SiC diodes are able to support the electro-thermal limits. A reliability test has also been performed to investigate the stability of forward …
Responsivity measurements of silicon carbide Schottky photodiodes in the UV range
2014
We report on the design and the electro-optical characterization of new classes of 4H-SiC Schottky UV detectors, fabricated employing Ni 2 Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I-V characteristics as a function of temperature and C-V characteristics. Responsivity measurements of the devices, as function of wavelength in the UV range, of package temperature and of applied reverse bias are reported. We also compared devices featuring different strip pitch sizes, discussing their performances, and found the device exhibiting best results.
Fe-N/C catalysts for oxygen reduction based on silicon carbide derived carbon
2017
This work was supported by the projects TK141 “Advanced materials and high-technology devices for energy recuperation systems” (2014-2020.4.01.15-0011), NAMUR “Nanomaterials - research and applications” (3.2.0304.12-0397) and by the Estonian Institutional Research Grant No. IUT20-13.