Search results for "Carbide"
showing 9 items of 139 documents
Electro-optical characterization of new classes of Silicon Carbide UV photodetectors
2014
In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in $\hbox{Ni}_{2}\hbox{Si}$ . These devices exploit the pinch-off surface effect. $I$ – $V$ and $C$ – $V$ characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10- $\mu\hbox{m}$ pitch class demonstrates …
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
2018
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This letter demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation. Peer reviewed
Molecular dynamics simulations of heavy ion induced defects in SiC Schottky diodes
2018
Heavy ion irradiation increases the leakage current in reverse-biased SiC Schottky diodes. This work demonstrates, via molecular dynamics simulations, that a combination of bias and ion-deposited energy is required to produce the degradation peerReviewed
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved. peerReviewed
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)
2022
This paper reports on the effects of excimer laser irradiation on an aluminum (Al)-doped silicon carbide (4H-SiC) layer. Specifically, high-concentration (1 × 1020at/cm3) Al-implanted 4H-SiC samples were exposed to a few pulses of 308 nm laser radiation (pulse duration of 160 ns), with fluence varying from 1.0 to 2.8 J/cm2. As a starting point, the laser-induced modifications of the morphological, microstructural, and nanoelectrical properties of the exposed 4H-SiC surface were monitored by combining different techniques. From these investigations, an evolution of the surface morphology was observed that can be ascribed to a conversion during irradiation of the uppermost part of the 4H-SiC …
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes
2016
Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed
Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition
2020
Abstract The structural and photoelectrical properties of Al-doped ZnO (AZO)/SiC/p-Si and AZO/SiC/n-Si heterojunctions, fabricated at low temperature by pulsed laser deposition, were investigated by means of a number of techniques. Raman analysis indicates that SiC layers have the cubic 3C-SiC phase, whilst X-ray diffraction measurements show that AZO films exhibit a hexagonal wurtzite structure, highly textured along the c-axis, with average crystallites size of 35.1 nm and lattice parameter c of 0.518 nm. The homogeneous and dense surface morphology observed by scanning electron microscopy was confirmed by atomic force microscopy images. Moreover, UV–Vis-NIR spectra indicated a high trans…
Single Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
2018
Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal- semiconductor interface or localized melting of the silicon …
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion LET, and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 V to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating. peerReviewed