Search results for "Carbon film"
showing 10 items of 40 documents
SEM and XPS studies of titanium dioxide thin films grown by MOCVD
1998
Abstract The metal organic chemical vapour deposition (MOCVD) method was used to prepare titanium dioxide thin films. Thin films of TiO2, about 100 nm thick, were deposited on (100)Si and (1102)Al2O3 sapphire substrates using titanium isopropoxide (Ti(OC3H7)4) as metal organic precursor. The morphology of the films and the presence of impurities on the thin films surfaces were studied using respectively, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The influence of the growth parameters such as the deposition temperature, the carrier gas (nitrogen) flow rate and the presence of an additional oxygen flow on the characteristics of the titanium dioxide films h…
Deformation behavior and interfacial sliding in carbon/copper nanocomposite films deposited by high power DC magnetron sputtering
2015
Abstract Amorphous carbon–copper nanocomposite films with a carbon content from 7 to 40 at.% have been deposited onto steel, silicon and glass substrates using a high power (> 60 W/cm 2 ) and high-rate DC magnetron sputtering technique. XRD, Raman spectroscopy and TEM results confirm that the deposited films consist of copper nanograins (size
Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
2016
Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N2:H2 plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the…
Structure and chemical bonds in reactively sputtered black Ti–C–N–O thin films
2011
The evolution of the nanoscale structure and the chemical bonds formed in Ti–C–N–O films grown by reactive sputtering were studied as a function of the composition of the reactive atmosphere by increasing the partial pressure of an O2+N2 gas mixture from 0 up to 0.4 Pa, while that of acetylene (carbon source) was constant. The amorphisation of the films observed by transmission electron microscopy was confirmed by micro- Raman spectroscopy, but it was not the only effect associated to the increase of the O2+N2 partial pressure. The chemical environment of titanium and carbon, analysed by X-ray photoemission spectroscopy, also changes due to the higher affinity of Ti towards oxygen and nitro…
Synthesis and characterization of carbon coated sponge-like tin oxide (SnOx) films and their application as electrode materials in lithium-ion batter…
2016
Nanoporous metal oxides are widely used for the development of various functional nanostructures. We report on the synthesis of sponge-like tin oxide films on copper foil by anodization of electrochemically deposited tin films. The thin films are functionalized using a surface-anchoring carbon precursor-polymer (poly(acrylonitrile-b-dopamine acrylamide)) followed by annealing at elevated temperature to convert the polymer coating into a carbonaceous coating. The as prepared and the carbon coated films are characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and Raman spectroscopy. Subsequently, both SnOx films are employed as a…
MOCVD growth of TiO2 thin films on single crystal GaAs substrates
2000
Abstract TiO 2 thin films have been grown on (100)GaAs and (111)GaAs substrates by low-pressure metal organic chemical vapour deposition (LP-MOCVD). Titanium(IV) isopropoxide, Ti{OCH(CH 3 ) 2 } 4 , was used as a precursor and TiO 2 films were obtained without an additional oxygen flux. Scanning electron microscopy (SEM) experiments have shown a well ordered rod-like crystallisation in the films grown on (100)GaAs. This ordered crystallisation was favoured by a high deposition temperature ( T d =700°C). By contrast, no distinct order was observed in the films grown on (111)GaAs substrates. X-ray diffraction patterns revealed a mainly rutile structure for the TiO 2 films deposited on (100)GaA…
Changes in Amorphous Hydrogenated Carbon Films by Ultraviolet and Infrared Laser Irradiation
2013
Amorphous hydrogenated carbon lms were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene hydrogen gas mixtures. The lms were irradiated with a nanosecond Nd:YAG laser working at the rst harmonics (λ1 = 1064 nm), the fourth harmonics (λ4 = 266 nm) or with a Nd:YVO4 laser working at the third harmonic (λ3 = 355 nm). The lms were studied by the Raman scattering, micro-Fourier transform infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength λ1 = 1064 nm leads to graphitization and formation of the silicon carbide, because o…
Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon
2015
Abstract Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp 2 carbon arrangement. The average height and area for single grains have been analyzed for al…
Combination of Confocal Raman Spectroscopy and Electron Microscopy on the Same Individual Bundles of Single-Walled Carbon Nanotubes
2002
We report a method to investigate the same individual single-walled carbon nanotube (SWNT) bundles with both transmission electron microscopy (TEM) and Raman spectroscopy. Free-standing individual bundles are obtained by depositing a solution of suspend SWNTs on a carbon film with a regular pattern of holes, which can be localized by TEM and also by confocal Raman microscopy. While most of the TEM images predict that the bundles consist of tubes with a similar diameter, we will show that occasionally a certain tube diameter can be associated with a particular radial breathing mode frequency of the Raman spectrum. Single-walled carbon nanotubes (SWNTs) are one-dimensional molecular structure…
Physical vapor deposition of Bi2S3 as absorber material in thin film photovoltaics
2013
Abstract In order to investigate alternative absorber materials for inorganic solar cells, thin films of bismuth trisulfide (Bi2S3) were deposited under high vacuum conditions by the thermal evaporation method from compound material. The effects of the substrate temperature during deposition on the structural, stoichiometric, optical and electrical properties were investigated. Polycrystalline thin films close to an ideal stoichiometry could be deposited for temperatures TSub = 80–290 °C; thereby a transition from rough needle-shaped particles with (hk0)-orientation parallel to the surface of the substrate towards block shaped grains with a preferred direction out of the surface could be ob…